Abstract: A detection sensor includes: a single light-emitting element that radiates light onto a conveyed material; and multiple light-receiving elements that receive interference light including the light that is scattered at a surface of the conveyed material and the light that is scattered inside the conveyed material.

Abstract: A detection sensor includes: a single light-emitting element that radiates light onto a conveyed material; and multiple light-receiving elements that receive interference light including the light that is scattered at a surface of the conveyed material and the light that is scattered inside the conveyed material.

Abstract: A method for producing a light-emitting device includes oxidizing a current confinement layer containing Al by steam oxidation from a side face of a light-emitting element portion including the current confinement layer to form a current confinement structure in the light-emitting element portion; heating the light-emitting element portion to about 150° C. or higher and about 400° C. or lower at reduced pressure for a predetermined heating time while the oxidized current confinement layer is exposed at the side face; and after the light-emitting element portion is heated, forming a protective film on the side face.

Abstract: A method for producing a light-emitting device includes oxidizing a current confinement layer containing Al by steam oxidation from a side face of a light-emitting element portion including the current confinement layer to form a current confinement structure in the light-emitting element portion; heating the light-emitting element portion to about 150° C. or higher and about 400° C. or lower at reduced pressure for a predetermined heating time while the oxidized current confinement layer is exposed at the side face; and after the light-emitting element portion is heated, forming a protective film on the side face.

Abstract: Provided is a surface-emitting semiconductor laser device including a substrate; a semiconductor layer formed on the substrate, the semiconductor layer including a first semiconductor multilayer film of a first conductivity type, an active region, and a second semiconductor multilayer film of a second conductivity type, the first semiconductor multilayer film and the second semiconductor multilayer film forming a cavity; and an oxidation-resistant structure including a groove formed along at least a portion of an outer periphery of the semiconductor layer and an oxidation-resistant portion formed on a surface of the groove.

Abstract: Provided is a surface-emitting semiconductor laser device including a substrate; a semiconductor layer formed on the substrate, the semiconductor layer including a first semiconductor multilayer film of a first conductivity type, an active region, and a second semiconductor multilayer film of a second conductivity type, the first semiconductor multilayer film and the second semiconductor multilayer film forming a cavity; and an oxidation-resistant structure including a groove formed along at least a portion of an outer periphery of the semiconductor layer and an oxidation-resistant portion formed on a surface of the groove.

Abstract: A vertical-cavity surface-emitting laser array includes a substrate having an element forming area, multiple columnar structures formed in the element forming area on the substrate, and at least one metal wire formed adjacent to the multiple columnar structures. Each columnar structure includes a lower semiconductor reflector of a first conductivity type, an upper semiconductor reflector of a second conductivity type, and an active region formed between the lower semiconductor reflector and the upper semiconductor reflector. The columnar structure emits light in a direction perpendicular to the substrate. The at least one metal wire has a distortion applying segment that extends in the same direction relative to the multiple columnar structures.

Abstract: A vertical-cavity surface-emitting laser array includes a substrate having an element forming area, multiple columnar structures formed in the element forming area on the substrate, and at least one metal wire formed adjacent to the multiple columnar structures. Each columnar structure includes a lower semiconductor reflector of a first conductivity type, an upper semiconductor reflector of a second conductivity type, and an active region formed between the lower semiconductor reflector and the upper semiconductor reflector. The columnar structure emits light in a direction perpendicular to the substrate. The at least one metal wire has a distortion applying segment that extends in the same direction relative to the multiple columnar structures.