Patents by Inventor Masaya Nishioka
Masaya Nishioka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20230238179Abstract: The present disclosure generally relates to a storage device comprising soft bias structures having high coercivity and high anisotropy, and a method of forming thereof. The soft bias structures may be formed by moving a wafer in a first direction under a plume of NiFe to deposit a first NiFe layer at a first angle, moving the wafer in a second direction anti-parallel to the first direction to deposit a second NiFe layer at a second angle on the first NiFe layer, and repeating one or more times. The soft bias structures may be formed by rotating a wafer to a first position, depositing a first NiFe layer at a first angle, rotating the wafer to a second position, depositing a second NiFe layer at a second angle on the first NiFe layer, and repeating one or more times. The first and second NiFe layers have different grain structures.Type: ApplicationFiled: April 3, 2023Publication date: July 27, 2023Applicant: Western Digital Technologies, Inc.Inventors: Masaya NISHIOKA, Diane L. BROWN, Jianhua HU, Cherngye HWANG
-
Patent number: 11631535Abstract: The present disclosure generally relates to a storage device comprising soft bias structures having high coercivity and high anisotropy, and a method of forming thereof. The soft bias structures may be formed by moving a wafer in a first direction under a plume of NiFe to deposit a first NiFe layer at a first angle, moving the wafer in a second direction anti-parallel to the first direction to deposit a second NiFe layer at a second angle on the first NiFe layer, and repeating one or more times. The soft bias structures may be formed by rotating a wafer to a first position, depositing a first NiFe layer at a first angle, rotating the wafer to a second position, depositing a second NiFe layer at a second angle on the first NiFe layer, and repeating one or more times. The first and second NiFe layers have different grain structures.Type: GrantFiled: October 7, 2021Date of Patent: April 18, 2023Assignee: Western Digital Technologies, Inc.Inventors: Masaya Nishioka, Diane L. Brown, Jianhua Hu, Cherngye Hwang
-
Publication number: 20230111296Abstract: The present disclosure generally relates to a storage device comprising soft bias structures having high coercivity and high anisotropy, and a method of forming thereof. The soft bias structures may be formed by moving a wafer in a first direction under a plume of NiFe to deposit a first NiFe layer at a first angle, moving the wafer in a second direction anti-parallel to the first direction to deposit a second NiFe layer at a second angle on the first NiFe layer, and repeating one or more times. The soft bias structures may be formed by rotating a wafer to a first position, depositing a first NiFe layer at a first angle, rotating the wafer to a second position, depositing a second NiFe layer at a second angle on the first NiFe layer, and repeating one or more times. The first and second NiFe layers have different grain structures.Type: ApplicationFiled: October 7, 2021Publication date: April 13, 2023Inventors: Masaya Nishioka, Diane L. Brown, Jianhua Hu, Cherngye Hwang
-
Publication number: 20170092303Abstract: A scissor type magnetic sensor having an in stack magnetic bias structure for biasing first and second magnetic free layers. The in stack bias structure can include a magnetic tab that is exchange coupled with a magnetic shield so as to pin its magnetization in a desired direction parallel with the media facing surface. The magnetic tab can be separated from the free magnetic layer by a non-magnetic de-coupling layer that magnetically de-couples the magnetic tab from the magnetic free layer. A magnetostatic field from the edges of the magnetic tab can provide magnetic biasing for the magnetic free layer. Alternatively, the magnetic tab can be separated from the magnetic free layer by a very thin non-magnetic dusting layer that provides a weak magnetic exchange coupling (either parallel or anti-parallel) between the magnetic tab and the magnetic free layer.Type: ApplicationFiled: September 30, 2015Publication date: March 30, 2017Inventors: Hongquan Jiang, Quang Le, Xiaoyong Liu, Masaya Nishioka, Lei Wang
-
Patent number: 9177588Abstract: The embodiments of the present invention relate to a method for forming a magnetic read head with pinned layers extending to the ABS of the read head and magnetically coupled with an antiferromagnetic layer that is recessed in relation to the ABS of the read head. Portions of the antiferromagnetic layer and a magnetic layer that are extending to the ABS are removed, exposing a shield. A shielding material is formed on the exposed shield and a seed layer is formed on the shield and on or over a portion of the remaining antiferromagnetic layer. A pinned layer structure is formed on the seed layer and the magnetic layer.Type: GrantFiled: January 17, 2014Date of Patent: November 3, 2015Assignee: HGST NETHERLANDS B.V.Inventors: James Mac Freitag, Ying Hong, Cherngye Hwang, Stefan Maat, Masaya Nishioka, David John Seagle, Hicham Moulay Sougrati, Shuxia Wang, Yi Zheng, Honglin Zhu
-
Publication number: 20150206550Abstract: The embodiments of the present invention relate to a method for forming a magnetic read head with pinned layers extending to the ABS of the read head and magnetically coupled with an antiferromagnetic layer that is recessed in relation to the ABS of the read head. Portions of the antiferromagnetic layer and a magnetic layer that are extending to the ABS are removed, exposing a shield. A shielding material is formed on the exposed shield and a seed layer is formed on the shield and on or over a portion of the remaining antiferromagnetic layer. A pinned layer structure is formed on the seed layer and the magnetic layer.Type: ApplicationFiled: January 17, 2014Publication date: July 23, 2015Applicant: HGST Netherlands B.V.Inventors: James Mac FREITAG, Ying HONG, Cherngye HWANG, Stefan MAAT, Masaya NISHIOKA, David John SEAGLE, Hicham Moulay SOUGRATI, Shuxia WANG, Yi ZHENG, Honglin ZHU
-
Patent number: 9042062Abstract: A magnetic read sensor having an antiferromagnetic located embedded within a magnetic shield of the sensor so that the antiferromagnetic layer can pin the magnetization of the pinned layer without contributing to read gap thickness. The sensor is configured with a pinned layer having a free layer structure located within an active area of the sensor and a pinned layer that extends beyond the free layer and active area of the sensor. The antiferromagnetic layer can be located outside of the active and exchange coupled with the extended portion of the pinned layer.Type: GrantFiled: August 27, 2013Date of Patent: May 26, 2015Assignee: HGST Netherlands B.V.Inventors: Ying Hong, Quang Le, Masaya Nishioka
-
Publication number: 20150062752Abstract: A magnetic read sensor having an antiferromagnetic located embedded within a magnetic shield of the sensor so that the antiferromagnetic layer can pin the magnetization of the pinned layer without contributing to read gap thickness. The sensor is configured with a pinned layer having a free layer structure located within an active area of the sensor and a pinned layer that extends beyond the free layer and active area of the sensor. The antiferromagnetic layer can be located outside of the active and exchange coupled with the extended portion of the pinned layer.Type: ApplicationFiled: August 27, 2013Publication date: March 5, 2015Applicant: HGST Netherlands B.V.Inventors: Ying Hong, Quang Le, Masaya Nishioka
-
Publication number: 20120231296Abstract: A method for manufacturing a magnetic sensor that minimizes topography resulting from stripe height defining masking and patterning in order to facilitate definition of track width. The method includes depositing a series of mask layers and then masking and ion milling the series of sensor layers to define a back edge of a sensor. A non-magnetic fill layer is then deposited, the magnetic fill layer being constructed of a material that has an ion mill rate that is similar to that of the series of sensor layers. A second masking and milling process is then performed to define the track width of the sensor and hard bias is deposited. Because the non-magnetic fill layer is removed at substantially the same rate as the sensor material the structure has a very flat topography on which to form the sensor track width.Type: ApplicationFiled: March 11, 2011Publication date: September 13, 2012Applicant: Hitachi Global Storage Technologies Netherlands B.V.Inventors: Quang Le, Jui-Lung Li, Yongchul Ahn, Simon H. Liao, Guangli Liu, Masaya Nishioka