Patents by Inventor Masaya Nishiyama
Masaya Nishiyama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10946494Abstract: A polishing agent for polishing a resin comprises abrasive grains, a water-soluble polymer having an ether bond, an organic solvent and water, wherein the abrasive grains have a positive charge in the polishing agent and an average particle diameter of the abrasive grains is larger than 20 nm.Type: GrantFiled: March 8, 2016Date of Patent: March 16, 2021Assignee: Showa Denko Materials Co., Ltd.Inventors: Masayuki Hanano, Masaya Nishiyama, Yutaka Goh, Haruaki Sakurai, Tomohiro Iwano
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Patent number: 10119049Abstract: A polishing agent for chemomechanically polishing a base having a carbon-based material and an insulating material to remove at least a part of the carbon-based material, the carbon-based material having a carbon content of 60 to 95 atm % as measured by X-ray photoelectron spectroscopy, the polishing agent comprising: an abrasive grain comprising silica; an allylamine-based polymer; and water, wherein a mass ratio of a content of the allylamine-based polymer with respect to a content of the abrasive grain is 0.002 to 0.400, and the abrasive grain has a positive charge in the polishing agent.Type: GrantFiled: June 17, 2015Date of Patent: November 6, 2018Assignee: HITACHI CHEMICAL COMPANY, LTD.Inventors: Makoto Mizutani, Satoyuki Nomura, Haruaki Sakurai, Masaya Nishiyama, Masayuki Hanano
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Publication number: 20180179417Abstract: A. polishing agent for chemomechanically polishing a base having a carbon-based material and an insulating material to remove at least a part of the carbon-based material, the carbon-based material having a carbon content of 60 to 95 atm % as measured by X-ray photoelectron spectroscopy, the polishing agent comprising: an abrasive grain comprising silica; an allylamine-based polymer; and water, wherein a mass ratio of a content of the allylamine-based polymer with respect to a content of the abrasive grain is 0.002 to 0.400, and the abrasive grain has a positive charge in the polishing agent.Type: ApplicationFiled: June 17, 2015Publication date: June 28, 2018Inventors: Makoto MIZUTANI, Satoyuki NOMURA, Haruaki SAKURAI, Masaya NISHIYAMA, Masayuki HANANO
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Publication number: 20180043497Abstract: A polishing agent for polishing a resin comprises abrasive grains, a water-soluble polymer having an ether bond, an organic solvent and water, wherein the abrasive grains have a positive charge in the polishing agent and an average particle diameter of the abrasive grains is larger than 20 nm.Type: ApplicationFiled: March 8, 2016Publication date: February 15, 2018Applicant: Hitachi Chemical Company, Ltd.Inventors: Masayuki Hanano, Masaya Nishiyama, Yutaka Goh, Haruaki Sakurai, Tomohiro Iwano
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Patent number: 9299573Abstract: Provided is a polishing method that polishes a substrate having (1) silicon nitride as a stopper, and, on the stopper, (2) at least a portion of a wiring metal, and (3) at least a portion of an insulating material. The method includes a step of supplying a CMP slurry, and thereby polishing the (2) wiring metal and (3) insulating material. The CMP slurry contains (A) a copolymer of (a) a monomer that is anionic and does not contain a hydrophobic substituent and (b) a monomer containing a hydrophobic substituent; (B) an abrasive grain; (C) an acid; (D) an oxidizing agent; and (E) a liquid medium, the component (B) has a zeta potential of +10 mV or more in the CMP slurry, and the copolymerization ratio (a):(b) of the component (A) is 25:75 to 75:25 as a molar ratio, with the pH being 5.0 or less.Type: GrantFiled: March 12, 2013Date of Patent: March 29, 2016Assignee: HITACHI CHEMICAL COMPANY, LTD.Inventors: Kouji Mishima, Masato Fukasawa, Masaya Nishiyama
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Publication number: 20150031205Abstract: Provided is a polishing method including a step of preparing a substrate having (1) silicon nitride as a stopper, and to a direction of a surface subjected to polishing from the stopper, (2) at least a portion of a wiring metal, and (3) at least a portion of an insulating material; a step of supplying a CMP slurry, and thereby polishing the (2) wiring metal and (3) insulating material on the direction of the surface subjected to polishing; and a step of stopping polishing before the (1) silicon nitride is exposed and completely removed, in which method the CMP slurry contains (A) a copolymer of (a) a monomer that is anionic and does not contain a hydrophobic substituent and (b) a monomer containing a hydrophobic substituent; (B) an abrasive grain; (C) an acid; (D) an oxidizing agent; and (E) a liquid medium, the component (B) has a zeta potential of +10 mV or more in the CMP slurry, and the copolymerization ratio (a):(b) of the component (A) is 25:75 to 75:25 as a molar ratio, with the pH being 5.0 or less.Type: ApplicationFiled: March 12, 2013Publication date: January 29, 2015Applicant: HITACHI CHEMICAL COMPANY, LTD.Inventors: Kouji Mishima, Masato Fukasawa, Masaya Nishiyama
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Publication number: 20100001229Abstract: The present invention provides a CMP slurry for silicon film, and by using such the slurry, polishing rates and polishing rate ratios of a silicon film, a silicon nitride film and a silicon oxide film required for performing CMP are obtained. In the CMP, a single slurry is used for forming a contact plug in self-alignment manner to decrease costs for producing semiconductor elements and improve yield. The slurry comprises abrasive grains, a cationic surfactant and water and has a pH value of 6.0 to 8.0.Type: ApplicationFiled: August 26, 2009Publication date: January 7, 2010Inventors: Hiroshi Nakagawa, Toranosuke Ashizawa, Takenori Narita, Masaya Nishiyama
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Publication number: 20080200032Abstract: The present invention relates to a method of polishing a semiconductor substrate, comprising pressing a semiconductor substrate having a film to be polished that is held by a carrier onto a polishing cloth fixed on a revolving polishing table and supplying a polishing slurry to the space between the polishing cloth and the semiconductor substrate, wherein the end point of polishing is determined according to the change in the friction coefficient while the friction coefficient between the semiconductor substrate and the polishing cloth is measured. According to the present invention it is possible to measure friction coefficient accurately in polishing a semiconductor substrate and use the change thereof to determine the end point of polishing.Type: ApplicationFiled: February 19, 2008Publication date: August 21, 2008Applicants: HITACHI CHEMICAL CO., LTD., ARACA INCORPORATEDInventors: Toranosuke ASHIZAWA, Masaya NISHIYAMA, Ara PHILIPOSSIAN, Yun ZHUANG, Yasa Adi SAMPURNO, Fransisca SUDARGHO
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Patent number: 7374474Abstract: In CMP technology for planarizing an interlayer insulation film, a BPSG film, an insulation film for shallow trench isolation, or the like, in the production process of a semiconductor element, irregularities of a matter being polished, e.g. a silicon oxide film, are planarized efficiently at a high speed while suppressing the occurrence of polishing flaws on the substrate by employing a polishing pad having organic fibers exposed on the surface thereof abutting against the matter being polished.Type: GrantFiled: October 8, 2002Date of Patent: May 20, 2008Assignee: Hitachi Chemical Co., Ltd.Inventors: Masaya Nishiyama, Masanobu Habiro, Yasuhito Iwatsuki, Hirokazu Hiraoka
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Publication number: 20070175104Abstract: The polishing slurry of the invention is a polishing slurry for polishing a silicon oxide film on polysilicon, which contains an abrasive, polysilicon polishing inhibitor, and water. As the polishing inhibitor, it is preferable to use (1) a water-soluble polymer having a N-monosubstituted or N,N-disubstituted skeleton substituted by any member selected from the group consisting of acrylamide, methacrylamide, and ?-substituted derivatives thereof, (2) polyethylene glycol, (3) an oxyethylene adduct of an acetylene-based diol, (4) a water-soluble organic compound having an acetylene bond, (5) an alkoxylated linear aliphatic alcohol, or (6) a copolymer containing polyvinyl pyrrolidone or vinyl pyrrolidone. There is provided a polishing method which is capable of polishing a silicon oxide film on a polysilicon film at a high speed, and inhibiting the progress of polishing of a polysilicon film in exposed parts in the manufacturing method for a semiconductor.Type: ApplicationFiled: November 9, 2006Publication date: August 2, 2007Applicant: HITACHI CHEMICAL CO., LTD.Inventors: Masaya Nishiyama, Kazuhiro Enomoto, Masato Fukasawa, Toshiaki Akutsu, Yuuto Otsuki, Toranosuke Ashizawa
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Publication number: 20060199473Abstract: Provided is a polishing pad comprising a fiber including organic fiber and a matrix resin holding the fiber, wherein at least the organic fiber is exposed on the work material-side surface thereof at least after dressing. The polishing pad suppresses generation of minute polishing scratches on the work material and allows flat polishing at low load. It in also possible to manage the polishing end point of the work material without generation of polishing scratch with its optical detection system monitoring the polishing state of work material. Thus, for example, it is possible to polish substrates under a small load on the interlayer insulating film and give products superior in flatness in semiconductor device manufacturing processes and thus, the polishing pad according to the invention may be used easily in the next-generation dual damascene method.Type: ApplicationFiled: April 2, 2004Publication date: September 7, 2006Inventors: Masao Suzuki, Hiroshi Nakagawa, Masato Yoshida, Masaya Nishiyama, Yasuo Shimamura
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Patent number: 7070670Abstract: There are disclosed an adhesive composition comprising: (a) an epoxy resin, (b) a curing agent and (c) a polymer compound with a weight average molecular weight of 100,000 or more, wherein a ratio of A/B exceeds 1 and is 10 or less, where A represents the total weight of (a) the epoxy resin and (b) the curing agent and B represents a weight of (c) the polymer compound; an adhesive composition, whose compositions are separated into a sea phase and an island phase, when viewed at a section in a cured state, and a ratio X/Y is in a range of 0.1 to 1.0, where X is an area of the sea phase and Y is an area of the island phase; a process for producing said adhesive composition; an adhesive film wherein said adhesive composition is formed into a film form; an adhesive film for bonding a semiconductor chip and a wiring board for mounting a semiconductor or for bonding semiconductor chips themselves, wherein the adhesive film can perform bonding by heat-pressing with a pressure of 0.01 to 0.Type: GrantFiled: March 30, 2001Date of Patent: July 4, 2006Assignee: Hitachi Chemical Co., Ltd.Inventors: Takeo Tomiyama, Teiichi Inada, Masaaki Yasuda, Keiichi Hatakeyama, Yuuji Hasegawa, Masaya Nishiyama, Takayuki Matsuzaki, Michio Uruno, Masao Suzuki, Tetsurou Iwakura, Yasushi Shimada, Yuuko Tanaka, Hiroyuki Kuriya, Keiji Sumiya
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Publication number: 20040224623Abstract: In CMP technology for planarizing an interlayer insulation film, a BPSG film, an insulation film for shallow trench isolation, or the like, in the production process of a semiconductor element, irregularities of a matter being polished, e.g. a silicon oxide film, are planarized efficiently at a high speed while suppressing the occurrence of polishing flaws on the substrate by employing a polishing pad having organic fibers exposed on the surface thereof abutting against the matter being polished.Type: ApplicationFiled: March 30, 2004Publication date: November 11, 2004Inventors: Masaya Nishiyama, Masanobu Habiro, Yasuhito Iwatsuki, Hirokazu Hiraoka
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Patent number: 6786945Abstract: A polishing slurry and a polishing method which are suitably used in a CMP technique for flattening a surface of a substrate in a production process of a semiconductor device. The polishing slurry comprises particles and a medium in which at least a part of the particles are dispersed, wherein the particles are made of at least one of (1) a cerium compound selected from cerium oxide, cerium halide and cerium sulfide and having a density of 3 to 6 g/cm3 and an average particle diameter of secondary particles of 1 to 300 nm and (2) a tetravalent metal hydroxide. A polishing method using the polishing slurry takes advantage of a chemical action of particles in the polishing slurry and minimizes a mechanical action of the particles, thereby achieving a decrease in scratches caused by the particles and an increase in polishing rate at the same time.Type: GrantFiled: August 13, 2003Date of Patent: September 7, 2004Assignee: Hitachi Chemical Co., Ltd.Inventors: Youichi Machii, Naoyuki Koyama, Masaya Nishiyama, Masato Yoshida
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Publication number: 20040065022Abstract: A polishing slurry and a polishing method which are suitably used in a CMP technique for flattening a surface of a substrate in a production process of a semiconductor device. The polishing slurry comprises particles and a medium in which at least a part of the particles are dispersed, wherein the particles are made of at least one of (1) a cerium compound selected from cerium oxide, cerium halide and cerium sulfide and having a density of 3 to 6 g/cm3 and an average particle diameter of secondary particles of 1 to 300 nm and (2) a tetravalent metal hydroxide. A polishing method using the polishing slurry takes advantage of a chemical action of particles in the polishing slurry and minimizes a mechanical action of the particles, thereby achieving a decrease in scratches caused by the particles and an increase in polishing rate at the same time.Type: ApplicationFiled: August 13, 2003Publication date: April 8, 2004Inventors: Youichi Machii, Naoyuki Koyama, Masaya Nishiyama, Masato Yoshida
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Publication number: 20030159773Abstract: There are disclosed an adhesive composition comprising: (a) an epoxy resin, (b) a curing agent and (c) a polymer compound with a weight average molecular weight of 100,000 or more, wherein a ratio of A/B exceeds 1 and is 10 or less, where A represents the total weight of (a) the epoxy resin and (b) the curing agent and B represents a weight of (c) the polymer compound; an adhesive composition, whose compositions are separated into a sea phase and an island phase, when viewed at a section in a cured state, and a ratio X/Y is in a range of 0.1 to 1.0, where X is an area of the sea phase and Y is an area of the island phase; a process for producing said adhesive composition; an adhesive film wherein said adhesive composition is formed into a film form; an adhesive film for bonding a semiconductor chip and a wiring board for mounting a semiconductor or for bonding semiconductor chips themselves, wherein the adhesive film can perform bonding by heat-pressing with a pressure of 0.01 to 0.Type: ApplicationFiled: February 21, 2003Publication date: August 28, 2003Inventors: Takeo Tomiyama, Teiichi Inada, Masaaki Yasuda, Keiichi Hatakeyama, Yuuji Hasegawa, Masaya Nishiyama, Takayuki Matsuzaki, Michio Uruno, Masao Suzuki, Tetsurou Iwakura, Yasushi Shimada, Yuuko Tanaka, Hiroyuki Kuriya, Keiji Sumiya