Patents by Inventor Masaya Ohnishi

Masaya Ohnishi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7868702
    Abstract: The subject invention provides a photoreceiver/amplifier circuit comprising a differential circuit including a differential transistor pair and a bias circuit; an active load; a feedback resistor for converting a photocurrent generated from a photodiode into a voltage; a reference resistor; and a compensation circuit. The resistance of the feedback resistor is greater than the resistance of the reference resistor. The compensation circuit supplies a compensation current from a junction between the feedback resistor and a non-inverting input terminal of the differential amplifier circuit, so as to cancel the difference between a voltage between terminals of the feedback resistor and a voltage between terminals of the reference resistor. This reduces noise and improves offset voltage characteristics. The present invention provides a photoreceiver/amplifier circuit ensuring noise reduction and desirable offset voltage characteristics.
    Type: Grant
    Filed: September 26, 2007
    Date of Patent: January 11, 2011
    Assignee: Sharp Kabushiki Kaisha
    Inventor: Masaya Ohnishi
  • Publication number: 20080074198
    Abstract: The subject invention provides a photoreceiver/amplifier circuit comprising a differential circuit including a differential transistor pair and a bias circuit; an active load; a feedback resistor for converting a photocurrent generated from a photodiode into a voltage; a reference resistor; and a compensation circuit. The resistance of the feedback resistor is greater than the resistance of the reference resistor. The compensation circuit supplies a compensation current from a junction between the feedback resistor and a non-inverting input terminal of the differential amplifier circuit, so as to cancel the difference between a voltage between terminals of the feedback resistor and a voltage between terminals of the reference resistor. This reduces noise and improves offset voltage characteristics. The present invention provides a photoreceiver/amplifier circuit ensuring noise reduction and desirable offset voltage characteristics.
    Type: Application
    Filed: September 26, 2007
    Publication date: March 27, 2008
    Applicant: SHARP KABUSHIKI KAISHA
    Inventor: Masaya OHNISHI
  • Patent number: 7175707
    Abstract: A p-type GaAs single crystal containing Si, Zn, B and In as dopants has an average dislocation density of 100 cm?2 or less. It may be produced by cooling a GaAs melt containing Si, Zn, B and In as dopants in a crystal-growing container having a seed crystal placed at a lower end thereof in an upward increasing temperature gradient, to cause a single crystal to grow upward from the seed crystal.
    Type: Grant
    Filed: March 24, 2003
    Date of Patent: February 13, 2007
    Assignee: Hitachi Cable Ltd.
    Inventors: Kenya Itani, Masaya Ohnishi, Shinji Komata, Seiji Mizuniwa
  • Patent number: 7002881
    Abstract: The object of the invention is to provide a light receiving amplification element applicable to an optical pickup apparatus comprising a semiconductor two-wavelength laser element and one condensing lens. The light receiving amplification element is provided with a plurality of light receiving portions corresponding to different wavelengths, a plurality of trans-impedance type amplifiers connected to the light receiving portions according to the different wavelengths and adaptable to the different wavelengths and switching portion for switching output from the trans-impedance type amplifier according to each of the wavelengths.
    Type: Grant
    Filed: June 12, 2003
    Date of Patent: February 21, 2006
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Takanori Okuda, Masaya Ohnishi
  • Patent number: 6878202
    Abstract: A method for growing a compound semiconductor single crystal comprising cooling a starting material melt of a compound semiconductor with an upward increasing temperature gradient in a crystal-growing container having a seed crystal placed at a lower end, thereby growing a single crystal upward from the seed crystal, the crystal orientation of the seed crystal in a crystal growth axis direction being an offset orientation of <100>+?, wherein the offset angle ? is 2°???55°.
    Type: Grant
    Filed: April 2, 2002
    Date of Patent: April 12, 2005
    Assignee: Hitachi Cable, Ltd.
    Inventors: Masaya Ohnishi, Kenya Itani, Seiji Mizuniwa, Hiroshi Sasabe, Inao Fujisaki
  • Publication number: 20040187768
    Abstract: A p-type GaAs single crystal containing Si, Zn, B and In as dopants has an average dislocation density of 100 cm−2 or less. It may be produced by cooling a GaAs melt containing Si, Zn, B and In as dopants in a crystal-growing container having a seed crystal placed at a lower end thereof in an upward increasing temperature gradient, to cause a single crystal to grow upward from the seed crystal.
    Type: Application
    Filed: March 24, 2003
    Publication date: September 30, 2004
    Applicant: HITACHI CABLE, LTD.
    Inventors: Kenya Itani, Masaya Ohnishi, Shinji Komata, Seiji Mizuniwa
  • Publication number: 20030231574
    Abstract: The object of the invention is to provide a light receiving amplification element applicable to an optical pickup apparatus comprising a semiconductor two-wavelength laser element and one condensing lens. The light receiving amplification element is provided with a plurality of light receiving portions corresponding to different wavelengths, a plurality of trans-impedance type amplifiers connected to the light receiving portions according to the different wavelengths and adaptable to the different wavelengths and switching portion for switching output from the trans-impedance type amplifier according to each of the wavelengths.
    Type: Application
    Filed: June 12, 2003
    Publication date: December 18, 2003
    Inventors: Takanori Okuda, Masaya Ohnishi
  • Publication number: 20020139296
    Abstract: A method for growing a compound semiconductor single crystal comprising cooling a starting material melt of a compound semiconductor with an upward increasing temperature gradient in a crystal-growing container having a seed crystal placed at a lower end, thereby growing a single crystal upward from the seed crystal, the crystal orientation of the seed crystal in a crystal growth axis direction being an offset orientation of <100>+&thgr;, wherein the offset angle &thgr; is 2°≦&thgr;≦55°.
    Type: Application
    Filed: April 2, 2002
    Publication date: October 3, 2002
    Applicant: HITACHI CABLE LIMITED
    Inventors: Masaya Ohnishi, Kenya Itani, Seiji Mizuniwa, Hiroshi Sasabe, Inao Fujisaki
  • Publication number: 20020027626
    Abstract: A transparent resin layers 12 and 13 are laminated on at least one side (in particular, both sides) of the light-scattering layer 11. The anisotropic light-scattering layer 11 comprises a continuous phase and a particulate dispersed phase 14 which have the different refraction indexes from each other, the mean aspect ratio of the particulate dispersed phase 14 is more than 1 and the longitudinal axis of the particulate dispersed phase is oriented in a direction.
    Type: Application
    Filed: June 22, 2001
    Publication date: March 7, 2002
    Inventors: Masanori Hiraishi, Masaya Ohnishi
  • Patent number: 6333383
    Abstract: A non-crystalline polyester resin composition of the present invention is excellent in processing properties of its molding, mechanical properties and chemical properties, in addition to its moldability, and is used in a variety of fields, which comprises 50 to 99% by weight of a non-crystalline polyester resin (component A) and 1 to 50% by weight of an epoxy-modified block copolymer (component B), total amount of the components A and B being 100, component B being obtained by epoxidation of a block copolymer (B3) comprising a polymer block (B1) containing mainly a unit based on a vinyl aromatic compound and a polymer block (B2) containing mainly a unit based on a conjugated diene compound, an epoxy equivalent of the component B being in the range of 400 to 7,500, and an absolute difference-value of the refractive index between the components A and B being 0.008 or less.
    Type: Grant
    Filed: June 1, 2000
    Date of Patent: December 25, 2001
    Assignee: Daicel Chemical Industries, Ltd.
    Inventor: Masaya Ohnishi
  • Patent number: 5483200
    Abstract: There is provided a light-receiving and amplifying device capable of changing its gain at high speed. A cathode of a photodiode PD is connected to a power source V.sub.CC via a current mirror circuit. An anode of the photodiode PD is connected to an input of an amplifier circuit AMP. The amplifier circuit AMP receives a photocurrent from the photodiode PD, converts the photocurrent into a voltage, and amplifies the voltage to form an output signal V.sub.OUT. A control signal of a current having the same magnitude as that of the photocurrent and output from the current mirror circuit is input to a control input terminal of a gain switching circuit. The gain switching circuit is composed of a resistor Rf.sub.1, a resistor Rf.sub.2, and a switch SW. The resistor Rf.sub.1 is connected across the input and the output of the amplifier circuit AMP, and the resistor Rf.sub.2 and the switch SW connected in series are connected across the input and the output of the amplifier circuit AMP.
    Type: Grant
    Filed: June 8, 1994
    Date of Patent: January 9, 1996
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Naonori Okabayashi, Koichi Hanafusa, Masaya Ohnishi