Abstract: An optical proximity sensor that increases a degree of freedom in an arrangement position is provided. The optical proximity sensor includes: a light detecting unit comprising a light detecting element on a substrate, a first transparent unit that covers the light detecting element, and a light-shielding unit that covers the first transparent unit; and a light emitting unit comprising a light emitting element on the substrate, a second transparent unit that covers the light emitting element, and the light-shielding unit that covers the second transparent unit, in which the light-shielding unit causes at least any of the first transparent unit and the second transparent unit to be exposed from a side surface of a package of the optical proximity sensor.

Abstract: A proximity sensor comprises a light emitting element configured to emit light; a synchronization signal input unit configured to be input with a synchronization signal which is output from a display device and which indicates a rewrite timing of an image displayed on a display screen; and an emission controller configured to control emission of the light from the light emitting element, wherein the emission controller is configured to cause the light emitting element to start the emission of the light at a start timing set based on the rewrite timing at which rewriting of one of a plurality of scanning lines of the image is caused to start in the specific display region, and an emission time of the light from the light emitting element, and the emission controller is configured to cause the light emitting element to end the emission of the light before the rewrite timing comes.

Abstract: A proximity sensor comprises a light emitting element configured to emit light; a synchronization signal input unit configured to be input with a synchronization signal which is output from a display device and which indicates a rewrite timing of an image displayed on a display screen; and an emission controller configured to control emission of the light from the light emitting element, wherein the emission controller is configured to cause the light emitting element to start the emission of the light at a start timing set based on the rewrite timing at which rewriting of one of a plurality of scanning lines of the image is caused to start in the specific display region, and an emission time of the light from the light emitting element, and the emission controller is configured to cause the light emitting element to end the emission of the light before the rewrite timing comes.

Abstract: [Object] An optical proximity sensor that increases a degree of freedom in an arrangement position is realized. [Solution] An optical proximity sensor (7, 7A, 7B) includes: a light detecting unit (76) constituted by a light detecting element (70) on a substrate (75), a first transparent unit (transparent resin 72) that covers the light detecting element, and a light-shielding unit (74) that covers the first transparent unit; and a light emitting unit (77) constituted by a light emitting element (71) on the substrate, a second transparent unit (transparent resin 73) that covers the light emitting element, and the light-shielding unit that covers the second transparent unit, in which the light-shielding unit causes at least any of the first transparent unit and the second transparent unit to be exposed from a side surface of the package of the optical proximity sensor.

Abstract: The subject invention provides a photoreceiver/amplifier circuit comprising a differential circuit including a differential transistor pair and a bias circuit; an active load; a feedback resistor for converting a photocurrent generated from a photodiode into a voltage; a reference resistor; and a compensation circuit. The resistance of the feedback resistor is greater than the resistance of the reference resistor. The compensation circuit supplies a compensation current from a junction between the feedback resistor and a non-inverting input terminal of the differential amplifier circuit, so as to cancel the difference between a voltage between terminals of the feedback resistor and a voltage between terminals of the reference resistor. This reduces noise and improves offset voltage characteristics. The present invention provides a photoreceiver/amplifier circuit ensuring noise reduction and desirable offset voltage characteristics.

Abstract: The subject invention provides a photoreceiver/amplifier circuit comprising a differential circuit including a differential transistor pair and a bias circuit; an active load; a feedback resistor for converting a photocurrent generated from a photodiode into a voltage; a reference resistor; and a compensation circuit. The resistance of the feedback resistor is greater than the resistance of the reference resistor. The compensation circuit supplies a compensation current from a junction between the feedback resistor and a non-inverting input terminal of the differential amplifier circuit, so as to cancel the difference between a voltage between terminals of the feedback resistor and a voltage between terminals of the reference resistor. This reduces noise and improves offset voltage characteristics. The present invention provides a photoreceiver/amplifier circuit ensuring noise reduction and desirable offset voltage characteristics.

Abstract: A p-type GaAs single crystal containing Si, Zn, B and In as dopants has an average dislocation density of 100 cm?2 or less. It may be produced by cooling a GaAs melt containing Si, Zn, B and In as dopants in a crystal-growing container having a seed crystal placed at a lower end thereof in an upward increasing temperature gradient, to cause a single crystal to grow upward from the seed crystal.

Abstract: The object of the invention is to provide a light receiving amplification element applicable to an optical pickup apparatus comprising a semiconductor two-wavelength laser element and one condensing lens. The light receiving amplification element is provided with a plurality of light receiving portions corresponding to different wavelengths, a plurality of trans-impedance type amplifiers connected to the light receiving portions according to the different wavelengths and adaptable to the different wavelengths and switching portion for switching output from the trans-impedance type amplifier according to each of the wavelengths.

Abstract: A method for growing a compound semiconductor single crystal comprising cooling a starting material melt of a compound semiconductor with an upward increasing temperature gradient in a crystal-growing container having a seed crystal placed at a lower end, thereby growing a single crystal upward from the seed crystal, the crystal orientation of the seed crystal in a crystal growth axis direction being an offset orientation of <100>+?, wherein the offset angle ? is 2°???55°.

Abstract: A p-type GaAs single crystal containing Si, Zn, B and In as dopants has an average dislocation density of 100 cm−2 or less. It may be produced by cooling a GaAs melt containing Si, Zn, B and In as dopants in a crystal-growing container having a seed crystal placed at a lower end thereof in an upward increasing temperature gradient, to cause a single crystal to grow upward from the seed crystal.

Abstract: The object of the invention is to provide a light receiving amplification element applicable to an optical pickup apparatus comprising a semiconductor two-wavelength laser element and one condensing lens. The light receiving amplification element is provided with a plurality of light receiving portions corresponding to different wavelengths, a plurality of trans-impedance type amplifiers connected to the light receiving portions according to the different wavelengths and adaptable to the different wavelengths and switching portion for switching output from the trans-impedance type amplifier according to each of the wavelengths.

Abstract: A method for growing a compound semiconductor single crystal comprising cooling a starting material melt of a compound semiconductor with an upward increasing temperature gradient in a crystal-growing container having a seed crystal placed at a lower end, thereby growing a single crystal upward from the seed crystal, the crystal orientation of the seed crystal in a crystal growth axis direction being an offset orientation of <100>+&thgr;, wherein the offset angle &thgr; is 2°≦&thgr;≦55°.

Abstract: A transparent resin layers 12 and 13 are laminated on at least one side (in particular, both sides) of the light-scattering layer 11. The anisotropic light-scattering layer 11 comprises a continuous phase and a particulate dispersed phase 14 which have the different refraction indexes from each other, the mean aspect ratio of the particulate dispersed phase 14 is more than 1 and the longitudinal axis of the particulate dispersed phase is oriented in a direction.

Abstract: A non-crystalline polyester resin composition of the present invention is excellent in processing properties of its molding, mechanical properties and chemical properties, in addition to its moldability, and is used in a variety of fields, which comprises 50 to 99% by weight of a non-crystalline polyester resin (component A) and 1 to 50% by weight of an epoxy-modified block copolymer (component B), total amount of the components A and B being 100, component B being obtained by epoxidation of a block copolymer (B3) comprising a polymer block (B1) containing mainly a unit based on a vinyl aromatic compound and a polymer block (B2) containing mainly a unit based on a conjugated diene compound, an epoxy equivalent of the component B being in the range of 400 to 7,500, and an absolute difference-value of the refractive index between the components A and B being 0.008 or less.

Abstract: There is provided a light-receiving and amplifying device capable of changing its gain at high speed. A cathode of a photodiode PD is connected to a power source V.sub.CC via a current mirror circuit. An anode of the photodiode PD is connected to an input of an amplifier circuit AMP. The amplifier circuit AMP receives a photocurrent from the photodiode PD, converts the photocurrent into a voltage, and amplifies the voltage to form an output signal V.sub.OUT. A control signal of a current having the same magnitude as that of the photocurrent and output from the current mirror circuit is input to a control input terminal of a gain switching circuit. The gain switching circuit is composed of a resistor Rf.sub.1, a resistor Rf.sub.2, and a switch SW. The resistor Rf.sub.1 is connected across the input and the output of the amplifier circuit AMP, and the resistor Rf.sub.2 and the switch SW connected in series are connected across the input and the output of the amplifier circuit AMP.