Abstract: A region for substrate potential is formed of an n-type well at a position in the direction of a channel length relative to the gate electrode and the position is between drain regions in the direction of a channel width. An n-type of a contact region with a higher concentration of n-type impurity than that of the region is provided in the region. The contact region is arranged away from the drain regions with a distance to obtain a desired breakdown voltage of PN-junction between the region and the drain region.

Abstract: A region for substrate potential is formed of an n-type well at a position in the direction of a channel length relative to the gate electrode and the position is between drain regions in the direction of a channel width. An n-type of a contact region with a higher concentration of n-type impurity than that of the region is provided in the region. The contact region is arranged away from the drain regions with a distance to obtain a desired breakdown voltage of PN-junction between the region and the drain region.

Abstract: A method for monitoring and acoustic damping a boiling water reactor which includes: a reactor pressure vessel; a steam pipe for transporting steam out from a steam dome of the reactor pressure vessel; a high pressure turbine driven by the steam; a feedwater heater which heats feedwater supplied to the reactor pressure vessel using bleed steam from the high pressure turbine; a bleeding valve which adjusts a flow rate of the bleed steam; and a pressure sensor provided in a main steam line including the steam dome and the steam pipe. The method includes monitoring a fluctuating pressure in the main steam line and controlling an opening degree of the bleeding valve based on a magnitude of the fluctuating pressure.

Abstract: A semiconductor device includes a semiconductor substrate, a base insulating layer, a silicon fuse, a pair of silicon wires, a silicon guard ring, an insulation coating, a first interlayer insulating layer, a via guard ring, a metal guard ring, a final insulating layer, and a fuse window. The base insulating layer is disposed over the semiconductor substrate. The silicon fuse is disposed on the base insulating layer. The pair of silicon wires is disposed on the base insulating layer. The silicon guard ring is disposed on the base insulating layer. The insulation coating is deposited at least over surfaces of the silicon wires. The first interlayer insulating layer is disposed on the base insulating layer. The final insulating layer is disposed on the interlayer insulating layer. The fuse window is defined above the silicon fuse inside the guard rings.

Abstract: A hydrogen treatment facility for treating hydrogen without using a power source is disposed outside a reactor containment vessel and in an upper portion of a reactor building. A hydrogen detector detecting hydrogen in the reactor building is connected to a control apparatus operated by an independent power source activated at the time of a station black-out. A circulation passage for air circulation generated in the reactor building is disposed in the reactor building and outside the reactor containment vessel. A hydrogen treatment duct connects to the circulation passage and a gangway and a room with equipment. During a severe accident and station black-out and when hydrogen concentration detected by the hydrogen detection apparatus exceeds a set concentration, the hydrogen treatment duct is put in use by the control apparatus. Air containing the hydrogen is introduced into the hydrogen treatment facilities through the hydrogen treatment duct and the circulation passage.

Abstract: A nuclear power plant and a fuel pool water cooling facility and method are provided that can suppress the decrease of a water level in a fuel pool with no power supply at the time of malfunction of a circulating water system. The nuclear power plant includes a reactor pressure vessel 2 that encompasses a reactor 1 containing nuclear fuel; a containment vessel 3 for housing the reactor pressure vessel 2; a fuel pool 11 for storing spent fuel 12; a reactor building 10 that houses the reactor pressure vessel 2, the containment vessel 3 and the fuel pool 11; a circulating water system 21 adapted to forced-circulating-cool the fuel pool water 14 in the fuel pool 11; and at least one heat pipe 13 for transferring heat of the fuel pool water 14 in the fuel pool 11 and discharging the heat to the atmosphere.

Abstract: A semiconductor device includes a base insulating film on which a silicon fuse, silicon wiring patterns, and a silicon guard ring are formed. The silicon guard ring surrounds the silicon fuse and has silicon cutout parts so as not to contact the silicon wiring patterns. A via guard ring, which has via cutout parts located above the silicon cutout parts, is formed in an interlayer insulating film and on the silicon guard ring. A metal wiring guard ring is formed on the via guard ring and the interlayer insulating film. A silicon nitride film is formed on the interlayer insulating film so as to cover the metal wiring guard ring. An interface between the interlayer insulating film and the metal wiring guard ring at the via cutout parts is covered by the silicon nitride film.

Abstract: A power supply device is disclosed that is able to satisfy the power requirements of a device in service and has high efficiency. The power supply device includes a first power supply; a voltage step-up unit that steps up an output voltage of the first power supply; a voltage step-down unit that steps down an output voltage of the voltage step-up unit; and a load that is driven to operate by an output voltage of the voltage step-down unit. The voltage step-up unit steps up the output voltage of the first power supply to a lower limit of an operating voltage of the voltage step-down unit.

Abstract: A method for monitoring and acoustic damping a boiling water reactor which includes: a reactor pressure vessel; a steam pipe for transporting steam out from a steam dome of the reactor pressure vessel; a high pressure turbine driven by the steam; a feedwater heater which heats feedwater supplied to the reactor pressure vessel using bleed steam from the high pressure turbine; a bleeding valve which adjusts a flow rate of the bleed steam; and a pressure sensor provided in a main steam line including the steam dome and the steam pipe. The method includes monitoring a fluctuating pressure in the main steam line and controlling an opening degree of the bleeding valve based on a magnitude of the fluctuating pressure.

Abstract: A boiling water reactor includes a reactor pressure vessel; a steam pipe for transporting steam generated in the reactor pressure vessel out from a steam dome positioned at an upper part of the reactor pressure vessel; a high pressure turbine connected to the steam pipe and driven by the steam; a feedwater heater which heats feedwater supplied to the reactor pressure vessel using bleed steam flowing from the high pressure turbine to the feedwater heater; a bleeding valve which adjusts a flow rate of the bleed steam; and a pressure sensor provided in a main steam line including the steam dome and the steam pipe. The boiling water reactor further includes a monitor and control system which controls an opening degree of the bleeding valve based on a magnitude of fluctuating pressure in the main steam line that is detected by the pressure sensor.

Abstract: A semiconductor device that includes a metal fuse which may be used for redundancy or trimming, allowing for adjustment in the characteristics of a circuit. The fuse includes a disconnecting metal, a plurality of metal-vias that are connected under respective ends of the disconnecting metal, and a plurality of interconnections that connect to the disconnecting metal through respective metal-vias. The disconnecting metal is disconnected by a laser exposure and the metal-vias are located inside of the spot diameter of the laser used for the laser exposure, and are spaced apart from a side surface of the disconnecting metal. The disconnecting metal is formed of a material having a melting point and a boiling point that is lower than the melting point and boiling point of the metal-vias.

Abstract: A nuclear power plant and method of operation for augmenting a second reactor thermal power output in a second operation cycle to a level larger than a first reactor thermal power output in the previous operation cycle. The plant is equipped, for example, with a reactor; a steam loop comprising high and low pressure turbines; a condenser for condensing steam discharged therefrom the low pressure turbine; a feedwater heater for heating feedwater supplied from the condenser; and a feedwater loop for leading feedwater discharged from the feedwater heater to the reactor. The operation method includes decreasing a ratio of extraction steam which is led to the feedwater heater from a steam loop in the second operation cycle.

Abstract: A method for manufacturing a semiconductor resistor includes forming a well region in a semiconductor substrate, with the well region serving as a resistive region, forming a pair of contact regions spaced apart from each other in the well region, and forming a diffusion region in an intermediate portion between the pair of contact regions on a surface of the well region. The diffusion region is configured to adjust resistance and temperature dependence of the semiconductor resistor.

Abstract: A semiconductor device includes a base insulating film on which a silicon fuse, silicon wiring patterns, and a silicon guard ring are formed. The silicon guard ring surrounds the silicon fuse and has silicon cutout parts so as not to contact the silicon wiring patterns. A via guard ring, which has via cutout parts located above the silicon cutout parts, is formed in an interlayer insulating film and on the silicon guard ring. A metal wiring guard ring is formed on the via guard ring and the interlayer insulating film. A silicon nitride film is formed on the interlayer insulating film so as to cover the metal wiring guard ring. An interface between the interlayer insulating film and the metal wiring guard ring at the via cutout parts is covered by the silicon nitride film.

Abstract: A semiconductor device is disclosed. The semiconductor device includes a source offset type MOS transistor in which a source and a drain are formed on a semiconductor substrate by having a predetermined distance between the source and the drain, and a gate electrode is formed on the semiconductor substrate between the source and the drain via a gate insulation film. One end of the drain overlaps or abuts on one end of the gate electrode when viewed from above the gate electrode, and the source is formed by having a distance from the gate electrode when viewed from above the gate electrode.

Abstract: A semiconductor device includes a semiconductor substrate, a base insulating layer, a silicon fuse, a pair of silicon wires, a silicon guard ring, an insulation coating, a first interlayer insulating layer, a via guard ring, a metal guard ring, a final insulating layer, and a fuse window. The base insulating layer is disposed over the semiconductor substrate. The silicon fuse is disposed on the base insulating layer. The pair of silicon wires is disposed on the base insulating layer. The silicon guard ring is disposed on the base insulating layer. The insulation coating is deposited at least over surfaces of the silicon wires. The first interlayer insulating layer is disposed on the base insulating layer. The final insulating layer is disposed on the interlayer insulating layer. The fuse window is defined above the silicon fuse inside the guard rings.

Abstract: A power supply device is disclosed that is able to satisfy the power requirements of a device in service and has high efficiency. The power supply device includes a first power supply; a voltage step-up unit that steps up an output voltage of the first power supply; a voltage step-down unit that steps down an output voltage of the voltage step-up unit; and a load that is driven to operate by an output voltage of the voltage step-down unit. The voltage step-up unit steps up the output voltage of the first power supply to a lower limit of an operating voltage of the voltage step-down unit.

Abstract: A power supply device is disclosed that is able to satisfy the power requirements of a device in service and has high efficiency. The power supply device includes a first power supply; a voltage step-up unit that steps up an output voltage of the first power supply; a voltage step-down unit that steps down an output voltage of the voltage step-up unit; and a load that is driven to operate by an output voltage of the voltage step-down unit. The voltage step-up unit steps up the output voltage of the first power supply to a lower limit of an operating voltage of the voltage step-down unit.

Abstract: The object of the invention is to accurately evaluate integrity of vibration of a dryer of an actual system. The evaluating method for integrity of vibration of a steam dryer using a reduced model in a nuclear plant including the steam dryer for reducing moisture of steam generated inside a steam dome of a nuclear reactor pressure vessel, and a plurality of main steam pipes for transporting the steam to outside includes the steps of performing a steam test with the reduced model, calculating fluctuating stress applied to the steam dryer, and confirming integrity of vibration. According to the invention, it is possible to evaluate the pressure fluctuation of a dryer of an actual system more accurately.

Abstract: A semiconductor device is disclosed. The semiconductor device includes a source offset type MOS transistor in which a source and a drain are formed on a semiconductor substrate by having a predetermined distance between the source and the drain, and a gate electrode is formed on the semiconductor substrate between the source and the drain via a gate insulation film. One end of the drain overlaps or abuts on one end of the gate electrode when viewed from above the gate electrode, and the source is formed by having a distance from the gate electrode when viewed from above the gate electrode.