Abstract: There is included forming an oxide film on a substrate by alternately performing: forming the first oxide film containing an atom X by performing a first cycle including non-simultaneously performing forming a first layer including a component in which a first functional group is bonded to the atom X, and forming a second layer containing the atom X and oxygen by oxidizing the first layer; and forming the second oxide film containing the atom X by performing a second cycle including non-simultaneously performing forming a third layer including a component in which the first functional group is bonded to the atom X, and forming a fourth layer containing the atom X and oxygen by oxidizing the third layer, under a processing condition that an oxidizing power is higher than an oxidizing power when oxidizing the first layer.

Abstract: There is provided a technique that includes: forming an oxide film containing an atom X of a precursor on a substrate by performing a cycle a predetermined number of times. The cycle including non-simultaneously performing: (a) forming a first layer containing a component in which a first group is bonded to the atom X on the substrate by supplying the precursor having a molecular structure in which the first and second groups are bonded to the atom X, to the substrate, the first group containing an alkoxy group, and the second group containing at least one of an amino group, an alkyl group, a halogeno group, a hydroxy group, a hydro group, an aryl group, a vinyl group, and a nitro group; and (b) forming a second layer containing the atom X by supplying an oxidizing agent to the substrate to oxidize the first layer.

Abstract: There is included forming an oxide film on a substrate by alternately performing: forming the first oxide film containing an atom X by performing a first cycle including non-simultaneously performing forming a first layer including a component in which a first functional group is bonded to the atom X, and forming a second layer containing the atom X and oxygen by oxidizing the first layer; and forming the second oxide film containing the atom X by performing a second cycle including non-simultaneously performing forming a third layer including a component in which the first functional group is bonded to the atom X, and forming a fourth layer containing the atom X and oxygen by oxidizing the third layer, under a processing condition that an oxidizing power is higher than an oxidizing power when oxidizing the first layer.

Abstract: A jig for assisting attachment and removal of a bolt, the bolt being inserted into a center hole of an inner cylinder included in a carrier bush and bolt holes opposed to each other to fasten a carrier and a lower arm, the bolt holes being provided in the lower arm, the jig having a base held in contact with a bottom surface of the lower arm, a fitting portion provided on the base to position the base with respect to the lower arm, and inner cylinder guides that are penetrable into an inner tip portion of the lower arm, and the inner cylinder guides have support grooves for supporting both ends of the inner cylinder, and a center line of the inner cylinder coincides with a center line of the bolt holes of the lower arm when the support grooves support the inner cylinder.

Abstract: A jig for assisting attachment and removal of a bolt, the bolt being inserted into a center hole of an inner cylinder included in a carrier bush and bolt holes opposed to each other to fasten a carrier and a lower arm, the bolt holes being provided in the lower arm, the jig having a base held in contact with a bottom surface of the lower arm, a fitting portion provided on the base to position the base with respect to the lower arm, and inner cylinder guides that are penetrable into an inner tip portion of the lower arm, and the inner cylinder guides have support grooves for supporting both ends of the inner cylinder, and a center line of the inner cylinder coincides with a center line of the bolt holes of the lower arm when the support grooves support the inner cylinder.

Abstract: A capacitive touchscreen including a first electrode layer, a second electrode layer, and at least one interlayer interposed between the first electrode layer and the second electrode layer. The first electrode layer includes a plurality of first electrodes, and the first electrodes are arranged at spaced intervals along a first direction. The second electrode layer includes a plurality of second electrodes, and the second electrodes are arranged at spaced intervals along a second direction so as to cross the first electrodes. The second direction crosses the first direction. The at least one interlayer has a thickness set such that a coupling capacitance between each first electrode and each second electrode is between or equal to 0.5 pF and 2 pF.

Abstract: A capacitive touchscreen including a first electrode layer, a second electrode layer, and at least one interlayer interposed between the first electrode layer and the second electrode layer. The first electrode layer includes a plurality of first electrodes, and the first electrodes are arranged at spaced intervals along a first direction. The second electrode layer includes a plurality of second electrodes, and the second electrodes are arranged at spaced intervals along a second direction so as to cross the first electrodes. The second direction crosses the first direction. The at least one interlayer has a thickness set such that a coupling capacitance between each first electrode and each second electrode is between or equal to 0.5 pF and 2 pF.

Abstract: The present invention pertains to a device for generating attribute data for a facility from log data of a game in which a facility assumed by a user is guessed by an interactive question form. Provided is a game in which a facility assumed by a user is guessed by an interactive question form, wherein log data of questions and answers obtained from the game is associated with the facility and stored in a log database, a facility serving as a subject for generating attribute data pertaining to the facility is specified as a subject facility, log data pertaining to the specified subject facility is extracted from the log database, and attribute data pertaining to the subject facility is generated on the basis of the extracted log data.

Abstract: The invention provides a touch panel including a first translucent base, a plurality of first electrodes, and a first low reflective member. The first translucent base includes a first face on a non-sensing side of the touch panel and a second face on a sensing side of the touch panel. The first electrodes are arranged at intervals on the first face of the first translucent base. The first low reflective member is configured to cover the first electrodes.

Abstract: An electric device includes a support substrate 12, an electric circuit 14 provided in a sealing region set on the support substrate 12, an electric wiring provided on the support substrate 12 for electrically connecting an external electrical signal input/output source with the electric circuit 14, a sealing member 16 provided on the support substrate 12 to surround the sealing region, and a sealing substrate 17 bonded to the support substrate 12 with the sealing member 16 interposed therebetween. the electric circuit 14 includes an electronic element 24 having an organic layer, and a width of the sealing member 16 differs between an intersection region in which the electric wiring 15 and the sealing member 16 intersect each other and a non-intersection region excluding the intersection region.

Abstract: An electric device includes a support substrate 12, an electric circuit 14 provided in a sealing region set on the support substrate 12, an electric wiring provided on the support substrate 12 for electrically connecting an external electrical signal input/output source with the electric circuit 14, a sealing member 16 provided on the support substrate 12 to surround the sealing region, and a sealing substrate 17 bonded to the support substrate 12 with the sealing member 16 interposed therebetween. the electric circuit 14 includes an electronic element 24 having an organic layer, and a width of the sealing member 16 differs between an intersection region in which the electric wiring 15 and the sealing member 16 intersect each other and a non-intersection region excluding the intersection region.

Abstract: An electronic device includes a support substrate 12, an electric circuit 14 provided in a sealing region set on the support substrate 12, a sealing member 16 provided on the support substrate 12 to surround the sealing region, a sealing substrate 17 bonded to the support substrate 12 with the sealing member 16 interposed therebetween, and a spacer 23 arranged between the support substrate 12 and the sealing substrate 17. The electric circuit 14 includes an electronic element 24 having an organic layer. The sealing member 16 and the spacer 23 are formed using the same material.

Abstract: An electric device includes a support substrate 12, an electric circuit 14 provided in a sealing region set on the support substrate 12, an electric wiring provided on the support substrate 12 for electrically connecting an external electrical signal input/output source with the electric circuit 14, a sealing member 16 provided on the support substrate 12 to surround the sealing region, and a sealing substrate 17 bonded to the support substrate 12 with the sealing member 16 interposed therebetween. the electric circuit 14 includes an electronic element 24 having an organic layer, and a width of the sealing member 16 differs between an intersection region in which the electric wiring 15 and the sealing member 16 intersect each other and a non-intersection region excluding the intersection region.

Abstract: The present invention provides an organic EL device. The organic EL device is provided with a first substrate, an anode that is located on the first substrate, a light emitting layer that is located on the anode, a partition wall that is formed of an insulating material and partitions the light emitting layer, a cathode that covers the light emitting layer and extends on the partition wall, and a second substrate that is superimposed onto the first substrate via a seal member, and in this structure, the cathode has a multilayer structure including an electron injection layer that injects electrons to the light emitting layer, and at least one electrically conductive layer, and the electron injection layer covers the light emitting layer, and the at least one electrically conductive layer covers the electron injection layer.

Abstract: A group III-V compound semiconductor comprising a single quantum well structure which has two barrier layers and a quantum well layer represented by the formula: InxGayAlzN (wherein x+y+z=1, 0<x<1, 0<y<1, and 0?z<1) between the barrier layers, wherein a multiple quantum well structure having repeatedly the barrier layers and the quantum well layer is formed, a ratio of an average mole fraction of InN in the multiple quantum well layer, which is measured by x-ray diffraction, to a mole fraction of InN calculated from a wavelength of light emitted from the group III-V compound semiconductor due to current injection is not more than 42.5%.

Abstract: A Group III-V compound semiconductor includes, at least, a substrate, a buffer layer of the general formula InuGavAlwN (wherein, 0?u?1, 0?v?1, 0?w?1, u+v+w=1) and a Group III-V compound semiconductor crystal layer of the general formula InxGayAlzN (wherein, 0?x?1, 0?y?1, 0?z?1, x+y+z=1), in this order, wherein the buffer layer has a thickness of at least about 5 ? and not more than about 90 ?. A method is provided for producing the Group III-V compound semiconductor, including forming a buffer layer of the general formula InuGavAlwN on a substrate to give a thickness of at least about 5 ? and not more than about 90 ? at temperatures lower than the growing temperature of the compound semiconductor crystal layer before growing the compound semiconductor crystal layer, and then growing a Group III-V compound semiconductor crystal layer of the general formula InxGayAlzN on the buffer layer.

Abstract: A process for producing a nitride compound semiconductor represented by a general formula, InxGayAlzN (where x+y+Z=1, 0?x?1, 0?y?1, and 0?z?1), characterized in that a non-doped nitride compound semiconductor (A) represented by a general formula, InaGabAlcN (where a+b+c=1, 0?a?1, 0?b?1, and 0?c?1) of a thickness of 500 to 5000 ? is formed between a p-type contact layer and an n-type contact layer at a temperature within a range between 550 and 850° C.

Abstract: A group 3–5 compound semiconductor comprising an interface of two layers having lattice mismatch, an intermediate layer having a film thickness of 25 nm or more and a quantum well layer, in this order. The compound semiconductor has high crystallinity and high quality, and suitably used for a light emitting diode.

Abstract: A fault searching system searches for a fault in an optical line connected with an optical fiber carrying out data transmission between a transmission apparatus and a user optical terminal. A connecting unit detaches a terminal portion of the optical line at the user optical terminal, and connects an OTDR to the terminal portion of the optical line. At least one of a test light with a wavelength different from a wavelength of light used for data transmission in the optical line, and a test light whose peak level is less than or equal to a predetermined level, is caused to be incident upon the terminal portion of the optical line. A searching unit searches for a fault in the optical line from the user optical terminal side by detecting backward scattering light or return light from the optical line produced by the test light caused by the OTDR.

Abstract: A group III-V compound semiconductor comprising a single quantum well structure which has two barrier layers and a quantum well layer represented by the formula: InxGayAlzN (wherein x+y+z=1, 0<x<1, 0<y<1, and 0?z <1) between the barrier layers, wherein a multiple quantum well structure having repeatedly the barrier layers and the quantum well layer is formed, a ratio of an average mole fraction of InN in the multiple quantum well layer, which is measured by x-ray diffraction, to a mole fraction of InN calculated from a wavelength of light emitted from the group III-V compound semiconductor due to current injection is not more than 42.5%.