Abstract: An agglomerated boron nitride powder, including a tap density of 0.6 g/ml or more and less than 0.8 g/ml and an interparticle void volume of 0.5 ml/g or more. A heat dissipation sheet, including the agglomerated boron nitride powder. An agglomerated boron nitride powder that enables a heat dissipation sheet to have improved thermal conductivity and good withstand voltage characteristics, a heat dissipation sheet containing the agglomerated boron nitride powder, and a semiconductor device including the heat dissipation sheet are provided.

Abstract: Disclosed is a method for assisting prediction of exacerbation of respiratory infection, comprising measuring a biomarker in a specimen collected from a subject suffering from a respiratory infection or a subject suspected of having a respiratory infection, wherein the biomarker is at least one selected from the group consisting of IFN?3, CCL17, CXCL11, IP-10, IL-6 and CXCL9, and a measured value of the biomarker is used as an index to predict exacerbation of the respiratory infection.

Abstract: To provide a composition which satisfies a high K1c value, a high glass transition temperature and a low viscosity simultaneously, and which is capable of forming an interlayer filler layer for a layered semiconductor device of which stable bonding is maintained even regardless of changes of environment. A composition comprising an epoxy compound (A) having a viscosity at 25° C. of at most 50 Pa·s, an amine compound (B) having a melting point or softening point of at least 80° C., and an amine compound (C) having a melting point or softening point of less than 80° C., wherein the proportion of the amine compound (C) is at least 1 part by weight and less than 40 parts by weight per 100 parts by weight of the total amount of the amine compound (B) and the amine compound (C).

Abstract: To provide an interlayer filler composition capable of forming a cured adhesive layer sufficiently cured and excellent in adhesion without letting voids be formed in the cured adhesive layer while minimizing leak out of a filler. An interlayer filler composition for a semiconductor device, comprises an epoxy resin (A), a curing agent (B), a filler (C) and a flux (D), has a minimum value of its viscosity at from 100 to 150° C. and satisfies the following formulae (1) and (2) simultaneously: 10<?50/?120<500 ??(1) 1,000<?150/?120 ??(2) (wherein ?50, ?120 and ?150 represent the viscosities at 50° C., 120° C. and 150° C., respectively, of the interlayer filler composition).

Abstract: To provide a composition which satisfies a high K1c value, a high glass transition temperature and a low viscosity simultaneously, and which is capable of forming an interlayer filler layer for a layered semiconductor device of which stable bonding is maintained even regardless of changes of environment. A composition comprising an epoxy compound (A) having a viscosity at 25° C. of at most 50 Pa·s, an amine compound (B) having a melting point or softening point of at least 80° C., and an amine compound (C) having a melting point or softening point of less than 80° C., wherein the proportion of the amine compound (C) is at least 1 part by weight and less than 40 parts by weight per 100 parts by weight of the total amount of the amine compound (B) and the amine compound (C).

Abstract: First, the present inventors assessed the effect of the compound represented by formula (III) below on Huh-7 cells infected with HBV, and demonstrated that the compound alone had an anti-HBV effect in vitro. Formula (III) Then, the present inventors revealed that the HBV replication-suppressing effect of PEG-IFN is enhanced in chimeric mice having a human liver infected with genotype C or A HBV when PEG-IFN is used in combination with the compound represented by formula (III) above. The present inventors also revealed that the HBV replication-suppressing effect of Entecavir is enhanced in chimeric mice having a human liver infected with genotype C HBV (wild-type and Entecavir-resistant strains) when Entecavir is used in combination with the compound represented by formula (III) above.