Abstract: An interconnect substrate includes a core layer including a resin layer mainly composed of a non-photosensitive thermosetting resin and a through interconnect extending through the resin layer, the core layer having no reinforcement member contained therein, a first interconnect structure laminated on a first side of the core layer and including first interconnect layers and first insulating layers mainly composed of a photosensitive resin, and a second interconnect structure laminated on a second side of the core layer and including second interconnect layers and a single second insulating layer mainly composed of a photosensitive resin, wherein the first interconnect layers are electrically connected to the second interconnect layers via the through interconnect, wherein the core layer has greater rigidity than the first interconnect structure and the second interconnect structure, and wherein a thickness of the second interconnect structure is greater than a thickness of each of the first insulating layer.

Abstract: A wiring board includes an insulating layer, a thin film capacitor laminated on the insulating layer, an interconnect layer electrically connected to the thin film capacitor, and an encapsulating resin layer laminated on the thin film capacitor. The interconnect layer includes a pad protruding from the thin film capacitor. The encapsulating resin layer is a mold resin having a non-photosensitive thermosetting resin as a main component thereof. The encapsulating resin layer exposes a top surface of the pad, and covers at least a portion of a side surface of the pad.

Abstract: A wiring board includes a first interconnect structure including a first interconnect layer, and a first insulating layer including a non-photosensitive thermosetting resin as a main component thereof, a second interconnect structure including second interconnect layers, and second insulating layers including a photosensitive resin as a main component thereof, and laminated on the first interconnect structure, and an encapsulating resin layer including a non-photosensitive thermosetting resin as a main component thereof, and laminated on an uppermost second insulating layer. An uppermost second interconnect layer includes a pad protruding from the uppermost second insulating layer. The encapsulating resin layer exposes a top surface of the pad, and covers at least a portion of a side surface of the pad. Thermal expansion coefficients of the first insulating layer and the encapsulating resin layer are lower than that of the second insulating layers.

Abstract: A wiring board includes an interconnect structure including a plurality of interconnect layers, and a plurality of insulating layers having a photosensitive resin as a main component thereof, and an encapsulating resin layer having a non-photosensitive thermosetting resin as a main component thereof, laminated on an uppermost insulating layer of the plurality of insulating layers. An uppermost interconnect layer of the plurality of interconnect layers includes a pad protruding from the uppermost insulating layer. The encapsulating resin layer exposes an upper surface of the pad, and covers at least a portion of a side surface of the pad, and at least a portion of side surfaces of the plurality of insulating layers. The pad is configured to receive a semiconductor chip to be mounted thereon.

Abstract: An interconnect substrate includes a core layer including a resin layer mainly composed of a non-photosensitive thermosetting resin and a through interconnect extending through the resin layer, the core layer having no reinforcement member contained therein, a first interconnect structure laminated on a first side of the core layer and including first interconnect layers and first insulating layers mainly composed of a photosensitive resin, and a second interconnect structure laminated on a second side of the core layer and including second interconnect layers and a single second insulating layer mainly composed of a photosensitive resin, wherein the first interconnect layers are electrically connected to the second interconnect layers via the through interconnect, wherein the core layer has greater rigidity than the first interconnect structure and the second interconnect structure, and wherein a thickness of the second interconnect structure is greater than a thickness of each of the first insulating layer.

Abstract: A wiring board includes a first interconnect structure including a first interconnect layer, and a first insulating layer including a non-photosensitive thermosetting resin as a main component thereof, a second interconnect structure including second interconnect layers, and second insulating layers including a photosensitive resin as a main component thereof, and laminated on the first interconnect structure, and an encapsulating resin layer including a non-photosensitive thermosetting resin as a main component thereof, and laminated on an uppermost second insulating layer. An uppermost second interconnect layer includes a pad protruding from the uppermost second insulating layer. The encapsulating resin layer exposes a top surface of the pad, and covers at least a portion of a side surface of the pad. Thermal expansion coefficients of the first insulating layer and the encapsulating resin layer are lower than that of the second insulating layers.

Abstract: A wiring board includes an insulating layer, a thin film capacitor laminated on the insulating layer, an interconnect layer electrically connected to the thin film capacitor, and an encapsulating resin layer laminated on the thin film capacitor. The interconnect layer includes a pad protruding from the thin film capacitor. The encapsulating resin layer is a mold resin having a non-photosensitive thermosetting resin as a main component thereof. The encapsulating resin layer exposes a top surface of the pad, and covers at least a portion of a side surface of the pad.

Abstract: The polarization angle ?1 of a polarizer (14) is set, and the reflection intensity S1 in a cross Nicol state and the reference reflection intensity Ref1 of a liquid crystal cell (15) are measured. A different polarization angle ?2 is then set, and the reflection intensity S2 in a cross Nicol state and the reference reflection intensity Ref2 of the liquid crystal cell are measured. The rations S1/Ref1, S2/Ref2 of measured intensities and the ratio S1·Ref2/S2·Ref1 is determined in order to cancel the background components of the reference reflection intensities Ref1, Ref2 thus determining the value of cell gap accurately.

Abstract: The polarization angle &thgr;1 of a polarizer (14) is set, and the reflection intensity S1 in a cross Nicol state and the reference reflection intensity Ref1 of a liquid crystal cell (15) are measured. A different polarization angle &thgr;2 is then set, and the reflection intensity S2 in a cross Nicol state and the reference reflection intensity Ref2 of the liquid crystal cell are measured. The rations S1/Ref1, S2/Ref2 of measured intensities and the ratio S1·Ref2/S2 Ref1 is determined in order to cancel the background components of the reference reflection intensities Ref1, Ref2 thus determining the value of cell gap accurately (FIG. 1).