Abstract: An ultrasound transducer includes: a piezoelectric element unit including a plurality of piezoelectric elements configured to generate an ultrasound vibration; and a horn that extends from a distal end toward a proximal end to define a longitudinal axis direction and that is connected to a distal end side of the piezoelectric element unit. The horn includes a first transformation portion whose cross-sectional area orthogonal to the longitudinal axis direction decreases toward a distal end, the first transformation portion being configured to amplify amplitude of the ultrasound vibration, and a second transformation portion that is provided between the first transformation portion and a connection position at which the horn and the piezoelectric element unit are connected, the second transformation portion being configured to amplify or attenuates the amplitude of the ultrasound vibration.

Abstract: A film forming apparatus of embodiments includes: a chamber including a sidewall; a shower head provided in an upper part of the chamber; a holder provided in the chamber holding a substrate; a first gas supply pipe supplying a first gas to the shower head; a first valve provided in the first gas supply pipe; at least one gas supply portion provided in a region of the chamber other than the shower head; a second gas supply pipe supplying a second gas to the at least one gas supply portion; a second valve provided in the second gas supply pipe; a gas exhaust pipe exhausting a gas from the chamber; and an exhaust device connected to the gas exhaust pipe.

Abstract: A semiconductor device of embodiments includes: a first electrode; a second electrode; an oxide semiconductor layer provided between the first electrode and the second electrode; a gate electrode surrounding the oxide semiconductor layer; and a gate insulating layer provided between the gate electrode and the oxide semiconductor layer, spaced from the first electrode, and containing nitrogen (N). In addition, a first distance between the first electrode and the gate insulating layer in a first direction from the first electrode to the second electrode is smaller than a second distance between the first electrode and the gate electrode in the first direction.

Abstract: According to one embodiment, a method for manufacturing a semiconductor device includes forming an electrode layer on a film containing indium and etching portions of the electrode layer left exposed by a mask layer until at least a portion of the film is exposed. A spacer film is formed to cover an upper surface of the electrode layer, side surfaces of the electrode layer, and an exposed upper surface of the film. The spacer film on the upper surface of the electrode layer and the exposed upper surface of the film is removed while leaving the spacer film on the side surfaces of the electrode layer. The exposed upper surface of the film is exposed to a reductive gas plasma to reduce portions of the film. These reduced portions of the film are then etched with a chemical solution.

Abstract: A semiconductor device of embodiments includes: a first electrode; a second electrode; an oxide semiconductor layer between the first electrode and the second electrode and including a first region surrounded by the first electrode in a plane perpendicular to a first direction from the first electrode toward the second electrode; a gate electrode facing the oxide semiconductor layer; a gate insulating layer; a first insulating layer between the gate electrode and the first electrode; and a second insulating layer between the gate electrode and the second electrode. A first maximum distance between a first portion of the first electrode and a second portion of the first electrode in a second direction in a cross section parallel to the first direction is larger than a minimum distance between a third portion of the first insulating layer and a fourth portion of the first insulating layer in the second direction.

Abstract: A semiconductor memory device according to an embodiment includes: a first oxide semiconductor layer between a first conductive layer and a second conductive layer; a first gate electrode; a first electrode; a second electrode; a first capacitor insulating film between the first electrode and the second electrode including a first region and a second region between the first region and the second electrode, concentration of the Ti is higher in the second region than the first region; a third conductive layer; a second oxide semiconductor layer between the third conductive layer and a fourth conductive layer; a second gate electrode; a third electrode; a fourth electrode; and a second capacitor insulating film between the third electrode and the fourth electrode, and including a third region and a fourth region between the third region and the fourth electrode, concentration of Ti is higher in the fourth region than the third region.

Abstract: Provided is a variable-wavelength surface emission laser having a wide wavelength variation range. A partial region of a thin-plate substrate (22) and a movable mirror (20), the partial region being positioned between an air gap (G1) and a movable gap (G2), can move toward the air gap (G1) side or the movable gap (G2) side.

Abstract: A sensor includes a body member, a volume change body, and a detection member. The body member has a flat plate-like shape, a first end in a first direction being supported, and a storage space opening at at least one of both end faces in a thickness direction. The volume change body, whose volume changes depending on an amount of a target, is supported by the body member so that at least a part of the volume change body is stored in the storage space. The detection member is in contact with a second end in the first direction of the body member, and detects stress caused by the change in the volume of the volume change body.

Abstract: An ultrasound transducer includes: a piezoelectric element unit including a plurality of piezoelectric elements configured to generate an ultrasound vibration; and a horn that extends from a distal end toward a proximal end to define a longitudinal axis direction and that is connected to a distal end side of the piezoelectric element unit. The horn includes a first transformation portion whose cross-sectional area orthogonal to the longitudinal axis direction decreases toward a distal end, the first transformation portion being configured to amplify amplitude of the ultrasound vibration, and a second transformation portion that is provided between the first transformation portion and a connection position at which the horn and the piezoelectric element unit are connected, the second transformation portion being configured to amplify or attenuates the amplitude of the ultrasound vibration.

Abstract: A sensor includes a body member, a volume change body, and a detection member. The body member has a flat plate-like shape, a first end in a first direction being supported, and a storage space opening at at least one of both end faces in a thickness direction. The volume change body, whose volume changes depending on an amount of a target, is supported by the body member so that at least a part of the volume change body is stored in the storage space. The detection member is in contact with a second end in the first direction of the body member, and detects stress caused by the change in the volume of the volume change body.

Abstract: An ultrasound transducer includes a plurality of piezoelectric elements that are layered in the thickness direction and that generate a longitudinal vibration in the thickness direction. The plurality of piezoelectric elements are arranged so that the thicknesses thereof are sequentially larger from the antinode side of the longitudinal vibration towards the node side of the longitudinal vibration.

Abstract: A semiconductor device includes a stacked film of electrode layers and insulating layers. A charge storage layer is in a hole in the stacked film on a first insulating film. A channel layer is on the charge storage layer via a second insulating film. An adsorption promoting layer is on surfaces of a third insulating layer covering the insulating layers and the first insulating film facing the electrode layers. The third insulating film includes a first metal element and a first element, and the adsorption promoting layer includes a second element and a third element. The difference in electronegativity between the second element and the third element is larger than a difference in electronegativity between the first metal element and the first element.

Abstract: An ultrasonic transducer includes driving source attached to an outer periphery of a bolt with being sandwiched between a distal side block and a proximal side block in a direction along a longitudinal axis, and the driving source includes a piezoelectric element generating ultrasonic vibration by an electric energy being supplied. By transmission of the ultrasonic vibration generated in the piezoelectric element, the ultrasonic transducer in a state in which a first vibration node that is generated in the driving source and a second vibration node that is generated in the bolt are prevented from being displaced with respect to each other in the direction along the longitudinal axis.

Abstract: A vapor cell which can increase the S/N ratio of light as a signal and has high accuracy and a vapor cell manufacturing method are provided. The vapor cell includes: a reflection space (14) provided so as to be able to store a gas containing an alkali metal atom; and an incident light reflection surface, an in-plane reflection portion (17), and an emission light reflection surface provided inside the reflection space (14). The incident light reflection surface has an elevation angle of 45° from an optical path plane so that the incident light incident from a predetermined external direction is reflected in the optical path plane that is perpendicular to the incident light.

Abstract: A sensor includes a body member, a volume change body, and a detection member. The body member has a flat plate-like shape, a first end in a first direction being supported, and a storage space opening at at least one of both end faces in a thickness direction. The volume change body, whose volume changes depending on an amount of a target, is supported by the body member so that at least a part of the volume change body is stored in the storage space. The detection member is in contact with a second end in the first direction of the body member, and detects stress caused by the change in the volume of the volume change body.

Abstract: An ultrasonic transducer includes driving source attached to an outer periphery of a bolt with being sandwiched between a distal side block and a proximal side block in a direction along a longitudinal axis, and the driving source includes a piezoelectric element generating ultrasonic vibration by an electric energy being supplied.

Abstract: An ultrasound transducer includes a plurality of piezoelectric elements that are layered in the thickness direction and that generate a longitudinal vibration in the thickness direction. The plurality of piezoelectric elements are arranged so that the thicknesses thereof are sequentially larger from the antinode side of the longitudinal vibration towards the node side of the longitudinal vibration.

Abstract: A method for producing an ultrasonic transducer including an arrangement determination step of determining an arrangement of piezoelectric elements in a stack on the basis of mechanical quality factors of the respective piezoelectric elements; and an assembly step of assembling the stack in which the piezoelectric elements are arranged according to the arrangement determined in the arrangement determination step, a horn, and a back mass. In the arrangement determination step, the arrangement of the piezoelectric elements is determined so that the difference in mechanical quality factor between the piezoelectric elements adjacent in the longitudinal direction is within 5% of a mean value of the mechanical quality factors of the piezoelectric elements.

Abstract: A therapeutic ultrasonic transducer including: a transducer body that has, in the stated order along the longitudinal axis, a first metal body, a laminated body in which a plurality of piezoelectric elements are laminated in the longitudinal-axis direction such that their directions of polarization are set in opposite directions in an alternating manner, and a second metal body, and that is formed by integrally fastening the metal bodies and the laminated body with a bolt; and a heat-radiation means that is connected at a position, on the transducer body, serving as a node of an ultrasonic vibration, or in the vicinity of that position.

Abstract: A container for specimen of the present invention comprises: a container body one end of which is open and which can hold a liquid for dispersing or preserving a specimen and can be mounted in a general-purpose apparatus for physical and chemical analysis; a specimen-picking rod; a cover member which connects with the specimen-picking rod; and an intermediary unit. The both ends of the intermediary unit are open, and the intermediary unit includes a penetration wall in the middle portion of the intermediary unit. The one open end of the intermediary unit can be removably fit to the open end of the container body, and the other open end of the intermediary unit can be removably fit to the cover member. The penetration wall separates a space in the intermediary unit into two divisions on the upper and lower sides in the state of the specimen-picking rod penetrating through a through hole that is formed in the penetration wall.