Abstract: Provided is a semiconductor apparatus capable of enhancing the withstand voltage while suppressing the enlargement of the chip area. Provided is semiconductor apparatus including: a first terminal to which a high frequency signal is supplied; a second terminal from which the high frequency signal is output; first, second and third switch elements electrically connected in series between the first terminal and the second terminal; a first capacitor provided between the first terminal and a first node between the first switch element and the second switch element; and a second capacitor provided between the first terminal and a second node between the second switch element and the third switch element, in which the capacitance of the first capacitor is greater than the capacitance of the second capacitor.

Abstract: Provided is a semiconductor apparatus capable of enhancing the withstand voltage while suppressing the enlargement of the chip area. Provided is semiconductor apparatus including: a first terminal to which a high frequency signal is supplied; a second terminal from which the high frequency signal is output; first, second and third switch elements electrically connected in series between the first terminal and the second terminal; a first capacitor provided between the first terminal and a first node between the first switch element and the second switch element; and a second capacitor provided between the first terminal and a second node between the second switch element and the third switch element, in which the capacitance of the first capacitor is greater than the capacitance of the second capacitor.

Abstract: A power source apparatus includes: a first alternating current line; a second alternating current line; an electric power inputting portion including a rectifying circuit for rectifying an alternating current voltage supplied from an alternating current power source, the electric power inputting portion serving to output the rectified voltage to each of the first and second alternating current lines; a first converter including a switching element for converting the alternating current voltage into a first direct current voltage; a second converter for converting the first direct current voltage obtained in the first converter into a second direct current voltage; and a control circuit for carrying out control for driving at least the switching element of the first converter so as to be turned ON or OFF.

Abstract: Disclosed herein is an AC line signal detection device including: a semiconductor integrated circuit; and a conversion section adapted to rectify an AC line signal and convert the rectified signal to an input signal to be fed to the semiconductor integrated circuit, wherein the semiconductor integrated circuit includes a monitoring section adapted to divide the AC line signal into a plurality of voltage ranges with at least one reference voltage proportional to the amplitude of the AC line signal to monitor within which voltage range the AC line signal falls; a measuring section adapted to measure a duration for which the AC line signal remains in each of the voltage ranges; and a determination section adapted to determine, based on the monitoring result of the monitoring section and the measurement result of the measuring section, whether the duration for which the AC line signal remains in each of the voltage ranges exceeds a set time which can be set in advance to make a pass/fail determination on the AC l

Abstract: A metamorphic buffer layer is formed on a semi-insulating substrate by an epitaxial growth method, a collector layer, a base layer, an emitter layer and an emitter cap layer are sequentially laminated on the metamorphic buffer layer, and a collector electrode is provided in contact with an upper layer of the metamorphic buffer layer. The metamorphic buffer layer is doped with an impurity, in a concentration equivalent to or higher than that in a conventional sub-collector layer, by an impurity doping process during crystal growth so that the metamorphic buffer layer will be able to play the role of guiding the collector current to the collector electrode. Since the sub-collector layer, which is often formed of a ternary mixed crystal or the like having a high thermal resistance, can be omitted, the heat generated in the semiconductor device can be rapidly released into the substrate.

Abstract: A power source apparatus includes: a first alternating current line; a second alternating current line; an electric power inputting portion including a rectifying circuit for rectifying an alternating current voltage supplied from an alternating current power source, the electric power inputting portion serving to output the rectified voltage to each of the first and second alternating current lines; a first converter including a switching element for converting the alternating current voltage into a first direct current voltage; a second converter for converting the first direct current voltage obtained in the first converter into a second direct current voltage; and a control circuit for carrying out control for driving at least the switching element of the first converter so as to be turned ON or OFF.

Abstract: Disclosed herein is an AC line signal detection device including: a semiconductor integrated circuit; and a conversion section adapted to rectify an AC line signal and convert the rectified signal to an input signal to be fed to the semiconductor integrated circuit, wherein the semiconductor integrated circuit includes a monitoring section adapted to divide the AC line signal into a plurality of voltage ranges with at least one reference voltage proportional to the amplitude of the AC line signal to monitor within which voltage range the AC line signal falls; a measuring section adapted to measure a duration for which the AC line signal remains in each of the voltage ranges; and a determination section adapted to determine, based on the monitoring result of the monitoring section and the measurement result of the measuring section, whether the duration for which the AC line signal remains in each of the voltage ranges exceeds a set time which can be set in advance to make a pass/fail determination on the AC l

Abstract: A semiconductor device includes an emitter layer: a base layer; and a collector layer, wherein the collector layer and the emitter layer each include a heavily doped thin sublayer having a high impurity concentration, and each of the heavily doped thin sublayers has an impurity concentration higher than those of semiconductor layers adjacent to each heavily doped thin sublayer.

Abstract: A metamorphic buffer layer is formed on a semi-insulating substrate by an epitaxial growth method, a collector layer, a base layer, an emitter layer and an emitter cap layer are sequentially laminated on the metamorphic buffer layer, and a collector electrode is provided in contact with an upper layer of the metamorphic buffer layer. The metamorphic buffer layer is doped with an impurity, in a concentration equivalent to or higher than that in a conventional sub-collector layer, by an impurity doping process during crystal growth so that the metamorphic buffer layer will be able to play the role of guiding the collector current to the collector electrode. Since the sub-collector layer, which is often formed of a ternary mixed crystal or the like having a high thermal resistance, can be omitted, the heat generated in the semiconductor device can be rapidly released into the substrate.

Abstract: A semiconductor device includes an emitter layer: a base layer; and a collector layer, wherein the collector layer and the emitter layer each include a heavily doped thin sublayer having a high impurity concentration, and each of the heavily doped thin sublayers has an impurity concentration higher than those of semiconductor layers adjacent to each heavily doped thin sublayer.