Abstract: A gas separation method in which a rare as a first introduced gas and an impurity gas as a second introduced gas, are introduced into a raw material gas. Each of the flow rates of the first and second introduced gases is controlled based on the flow rates of the rare gas and impurity gas in the discharged gas from a rare gas using facility. A gas separation device includes an introduction pipe for introducing rare gas in a separation gas container into a raw material gas, an introduction pipe for introducing impurity gases in the separation gas container into the raw material gas, a flow meter provided in a supply pipe for supplying a discharged gas of a rare gas using facility, and an arithmetic device electrically connected to each of the flow meter the flow rate controller, and the flow rate controller.

Abstract: A gas separation method in which a rare as a first introduced gas and an impurity gas as a second introduced gas, are introduced into a raw material gas. Each of the flow rates of the first and second introduced gases is controlled based on the flow rates of the rare gas and impurity gas in the discharged gas from a rare gas using facility. A gas separation device includes an introduction pipe for introducing rare gas in a separation gas container into a raw material gas, an introduction pipe for introducing impurity gases in the separation gas container into the raw material gas, a flow meter provided in a supply pipe for supplying a discharged gas of a rare gas using facility, and an arithmetic device electrically connected to each of the flow meter the flow rate controller, and the flow rate controller.

Abstract: One object of the present invention is to provide a method for producing a silicon nitride film having a high hydrofluoric acid resistance, a high moisture resistance and an appropriate internal stress on a substrate of which the temperature is controlled at 250° C. or lower, the present invention provides a method for producing a silicon nitride film (30) by a plasma chemical vapor deposition method, wherein a processing gas obtained by adding a hydrogen reducing gas in a range of 200 to 2000 volumetric flow rate to an organosilane gas of 1 volumetric flow rate is used, a pressure in a process chamber (40) accommodating the substrate (20) is adjusted to be in a range of 35 to 400 Pa, and a density of high-frequency electric power applied to an electrode installed in the process chamber (40) is adjusted to be in a range of 0.2 to 3.5 W/cm2.

Abstract: A method of reducing carbon and/or hydrogen atom content ratio relative to contents of silicon atoms and nitrogen atoms in a silicon nitride film formed by a plasma CVD method using an organic silane as a material, and improving film quality such as electrical properties. A silicon nitride film is formed with the organic silane and at least one additive gas selected from a group consisting of hydrogen and ammonia by a plasma CVD method. The silicon nitride film has a carbon atom content ratio of less than 0.8 assuming that a sum of a silicon atom content and a nitrogen atom content in the silicon nitride film is 1. The silicon nitride film has improved properties such as reduced leakage current.

Abstract: One object of the present invention is to provide a method for producing a silicon nitride film having a high hydrofluoric acid resistance, a high moisture resistance and an appropriate internal stress on a substrate of which the temperature is controlled at 250° C. or lower, the present invention provides a method for producing a silicon nitride film (30) by a plasma chemical vapor deposition method, wherein a processing gas obtained by adding a hydrogen reducing gas in a range of 200 to 2000 volumetric flow rate to an organosilane gas of 1 volumetric flow rate is used, a pressure in a process chamber (40) accommodating the substrate (20) is adjusted to be in a range of 35 to 400 Pa, and a density of high-frequency electric power applied to an electrode installed in the process chamber (40) is adjusted to be in a range of 0.2 to 3.5 W/cm2.

Abstract: The invention provides a method capable of reducing carbon atom content ratio and/or hydrogen atom content ratio relative to contents of silicon atoms and nitrogen atoms in a silicon nitride film formed by a plasma CVD method using an organic silane as a material, as well as improving film quality such as electrical properties. A silicon nitride film according to the invention is formed by forming a plasma of an organic silane and at least one additive gas selected from the group consisting of hydrogen and ammonia by a plasma CVD method. The silicon nitride film has a carbon atom content ratio of less than 0.8 assuming that a sum of a silicon atom content and a nitrogen atom content in the silicon nitride film is 1. The silicon nitride film has a hydrogen atom content ratio of less than 0.9 assuming that a sum of the silicon atom content and the nitrogen atom content in the silicon nitride film is 1.

Abstract: A method which separates a component which is easily adsorbed by an adsorbent and a component which is not easily adsorbed by the adsorbent, from a feed gas which includes at least two kinds of components, with adsorption columns, wherein the adsorbent is filled in the adsorption columns and has strong adsorbability with respect to at least one kind of component included in the feed gas, and also has weak adsorbability with respect to at least one kind of other components included in the feed gas, and a temperature of the adsorbents which is filled in the column is maintained to be higher than the highest temperature of an ambient temperature around the adsorption columns which is variable throughout the year.

Abstract: A method which separates a component which is easily adsorbed by an adsorbent and a component which is not easily adsorbed by the adsorbent, from a feed gas which includes at least two kinds of components, with adsorption columns, wherein the adsorbent is filled in the adsorption columns and has strong adsorbability with respect to at least one kind of component included in the feed gas, and also has weak adsorbability with respect to at least one kind of other components included in the feed gas, and a temperature of the adsorbents which is filled in the column is maintained to be higher than the highest temperature of an ambient temperature around the adsorption columns which is variable throughout the year.

Abstract: An exhaust gas treatment system, which comprises: an arithmetic processing part wherein the type of gas, the flow rate and the supply time of a gas supplied to a gas-using facility are inputted as parameters, and the type of gas, the flow rate and the supply time of an additive gas is calculated based on these parameters; an additive gas supply part, which supplies an additive gas while controlling the type of gas, the flow rate and the supply time of the additive gas in accordance with indication signals sent from the arithmetic processing part; and a removal part wherein the additive gas is added to an exhaust gas exhausted from the gas-using facility, and a target compound included in the exhaust gas is removed by reacting the additive gas and the target compound included in the exhaust gas.