Abstract: In a target track generation apparatus, a subject vehicle reference preceding vehicle position calculator calculates a point group of subject vehicle reference preceding vehicle positions representing a history of a relative position of a preceding vehicle in a coordinate system using a current position of a subject vehicle as a reference. A target track generator generates a target track of the subject vehicle, based on the point group of the subject vehicle reference preceding vehicle positions. A correction target track generator generates a correction target track obtained by correcting the target track, based on the point group of the subject vehicle reference preceding vehicle positions or the target track, when it is determined that correction of the target track is necessary.

Abstract: A semiconductor laser device includes: semiconductor laser arrays; collimating members; a condenser lens provided, in common, for collimated light beam arrays outputted from the respective collimating members, and including a light incident surface on which a light incident row pattern including light incident regions is formed through entering of the collimated light beam arrays; and an optical fiber. A condenser lens incident optical path length of at least one of the semiconductor laser arrays is different from that of any other one of the semiconductor laser arrays. A collimated light beam array derived from one of the semiconductor laser arrays that corresponds to the largest condenser lens incident optical path length is directed to a predetermined light incident region in the light incident surface. The predetermined light incident region is other than the outermost light incident region in the light incident row pattern.

Abstract: A semiconductor laser device includes: semiconductor laser arrays; collimating members; a condenser lens provided, in common, for collimated light beam arrays outputted from the respective collimating members, and including a light incident surface on which a light incident row pattern including light incident regions is formed through entering of the collimated light beam arrays; and an optical fiber. A condenser lens incident optical path length of at least one of the semiconductor laser arrays is different from that of any other one of the semiconductor laser arrays. A collimated light beam array derived from one of the semiconductor laser arrays that corresponds to the largest condenser lens incident optical path length is directed to a predetermined light incident region in the light incident surface. The predetermined light incident region is other than the outermost light incident region in the light incident row pattern.

Abstract: A laser system may include: a master oscillator configured to output pulsed laser light; an amplification device for amplifying the pulsed laser light from the master oscillator; a first timing detector configured to detect a first timing at which the master oscillator outputs the pulsed laser light; a second timing detector configured to detect a second timing at which the amplification device discharges; and a controller configured to, based on results of detection by the first timing detector and the second timing detector, control at least one of the first timing and the second timing so that the amplification device discharges when the pulsed laser light passes through a discharge space of the amplification device.

Abstract: A laser system may include: a master oscillator configured to output pulsed laser light; an amplification device for amplifying the pulsed laser light from the master oscillator; a first timing detector configured to detect a first timing at which the master oscillator outputs the pulsed laser light; a second timing detector configured to detect a second timing at which the amplification device discharges; and a controller configured to, based on results of detection by the first timing detector and the second timing detector, control at least one of the first timing and the second timing so that the amplification device discharges when the pulsed laser light passes through a discharge space of the amplification device.

Abstract: An upper limit and a lower limit are preliminarily set for a spectral line width common to a plurality of narrow-band laser devices. When delivered or subjected to maintenance, the narrow-band laser device is caused to laser oscillate to detect its spectral line width before it is used as a light source for semiconductor exposure. A spectral line width adjustment unit provided in the narrow-band laser device is adjusted so that the spectral line width assumes a value between the upper limit and the lower limit. The present invention is able to suppress the variation in spectral line width such as E95 bandwidth caused by machine differences during the manufacture of the laser device, or by replacement or maintenance of the laser device, whereby the quality of integrated circuit patterns formed by the semiconductor exposure tool can be stabilized.

Abstract: A laser system may include: a master oscillator configured to output pulsed laser light; an amplification device for amplifying the pulsed laser light from the master oscillator; a first timing detector configured to detect a first timing at which the master oscillator outputs the pulsed laser light; a second timing detector configured to detect a second timing at which the amplification device discharges; and a controller configured to, based on results of detection by the first timing detector and the second timing detector, control at least one of the first timing and the second timing so that the amplification device discharges when the pulsed laser light passes through a discharge space of the amplification device.

Abstract: An upper limit and a lower limit are preliminarily set for a spectral line width common to a plurality of narrow-band laser devices. When delivered or subjected to maintenance, the narrow-band laser device is caused to laser oscillate to detect its spectral line width before it is used as a light source for semiconductor exposure. A spectral line width adjustment unit provided in the narrow-band laser device is adjusted so that the spectral line width assumes a value between the upper limit and the lower limit. The present invention is able to suppress the variation in spectral line width such as E95 bandwidth caused by machine differences during the manufacture of the laser device, or by replacement or maintenance of the laser device, whereby the quality of integrated circuit patterns formed by the semiconductor exposure tool can be stabilized.

Abstract: A laser system may include: a master oscillator configured to output pulsed laser light; an amplification device for amplifying the pulsed laser light from the master oscillator; a first timing detector configured to detect a first timing at which the master oscillator outputs the pulsed laser light; a second timing detector configured to detect a second timing at which the amplification device discharges; and a controller configured to, based on results of detection by the first timing detector and the second timing detector, control at least one of the first timing and the second timing so that the amplification device discharges when the pulsed laser light passes through a discharge space of the amplification device.

Abstract: An upper limit and a lower limit are preliminarily set for a spectral line width common to a plurality of narrow-band laser devices. When delivered or subjected to maintenance, the narrow-band laser device is caused to laser oscillate to detect its spectral line width before it is used as a light source for semiconductor exposure. A spectral line width adjustment unit provided in the narrow-band laser device is adjusted so that the spectral line width assumes a value between the upper limit and the lower limit. The present invention is able to suppress the variation in spectral line width such as E95 bandwidth caused by machine differences during the manufacture of the laser device, or by replacement or maintenance of the laser device, whereby the quality of integrated circuit patterns formed by the semiconductor exposure tool can be stabilized.