Abstract: An absorbent and process for removing materials for semiconductor products, such as SiH.sub.4, B.sub.2 H.sub.6, SeH.sub.2, AsH.sub.3, PH.sub.3, GeH.sub.4, SiH.sub.2 Cl.sub.2, SiHCl.sub.3, (CH.sub.3).sub.3 Al, (CH.sub.3).sub.3 Ga, etc. from a gas containing above toxic components. The absorbent includes a first and second dry absorbent. The first absorbent induces a solid carrier containing a large proportion of a porous inorganic silicate and impregnated with an aqueous solution of an alkali. The second absorbent has a solid carrier, similar to that in the first absorbent, being impregnated with an aqueous solution of an alkali and an aqueous solution of an oxidizing agent capable of oxidizing germane. When used separately, these two absorbent are not capable of treating certain volatile inorganic hydrides or lose their capacity of absorption in a relatively short period for such hydrides.

Abstract: An absorbent and process for removing materials for semiconductor products, such as SiH.sub.4, B.sub.2 H.sub.6, SeH.sub.2, AsH.sub.3, PH.sub.3, GeH.sub.4, SiH.sub.2 Cl.sub.2, SiHCl.sub.3, (CH.sub.3).sub.3 Al, (CH.sub.3).sub.3 Ga, etc. from a gas containing above toxic components. The absorbent includes a first and second dry absorbent. The first absorbent induces a solid carrier containing a large proportion of a porous inorganic silicate and impregnated with an aqueous solution of an alkali. The second absorbent has a solid carrier, similar to that in the first absorbent, being impregnated with an aqueous solution of an alkali and an aqueous solution of an oxidizing agent capable of oxidizing german. When used separately, these two absorbents are not capable of treating certain volatile inorganic hydrides or lose their capacity of absorption in a relatively short period for such hydrides.