Patents by Inventor Masayasu Tanjyo

Masayasu Tanjyo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6506662
    Abstract: A method for forming a silicon on insulator substrate includes the step of dissociating a plasma of molecules including at least any one of oxygen and nitrogen to obtain ions. The ions are accelerated by passage through gaps between acceleration electrodes at a predetermined acceleration energy for irradiation of the accelerated ions onto a silicon substrate which is heated to form an insulation film within the silicon substrate.
    Type: Grant
    Filed: February 9, 2000
    Date of Patent: January 14, 2003
    Inventors: Atsushi Ogura, Youichirou Numasawa, Akira Doi, Masayasu Tanjyo
  • Publication number: 20020155679
    Abstract: A method for forming a silicon on insulator substrate includes the step of dissociating a plasma of molecules including at least any one of oxygen and nitrogen to obtain ions. The ions are accelerated by passage through gaps between acceleration electrodes at a predetermined acceleration energy for irradiation of the accelerated ions onto a silicon substrate which is heated to form an insulation film within the silicon substrate.
    Type: Application
    Filed: February 9, 2000
    Publication date: October 24, 2002
    Inventors: Atsushi Ogura, Youichirou Numasawa, Akira Doi, Masayasu Tanjyo
  • Patent number: 6160262
    Abstract: A large-area ion beam having a one-directionally long section is generated in a magnetically shielded ion source. The ion beam is bent evenly to form a large center angle of about 90 degrees in the direction of the short side by a window/frame type magnet having a large gap and having left and right frames each wound with a plurality of coils. Then, the ion beam is made to pass through a slit plate having a one-directionally long opening so that unnecessary ions are removed. The ion beam is then radiated onto a subject which makes a translational motion in the direction of the short side of the beam.
    Type: Grant
    Filed: October 21, 1998
    Date of Patent: December 12, 2000
    Assignee: Nissin Electric Co., LTD
    Inventors: Masahiko Aoki, Masayasu Tanjyo
  • Patent number: 5189303
    Abstract: An ion source for producing wide, large area type ion beams with a mass-separation device. Four, five six or so electrode plates with ion holes at the same positions are installed at the outlet of the ion source. Second or third one of the electrodes has Wien filters at the ion holes. The Wien filter has permanent magnets and electrodes for producing a magnetic field and an electric field perpendicular to the axial direction of the ion holes. Ion beams which have not been accelerated so fast are separated by mass by the Wien filter. Low kinetic energy of ions alleviates the strength of the magnetic field and the electric field. Wide, large area type ion beams without impurities are obtained.
    Type: Grant
    Filed: February 21, 1992
    Date of Patent: February 23, 1993
    Assignee: Nissin Electric Co., Ltd.
    Inventors: Masayasu Tanjyo, Hiroshi Nakazato