Patents by Inventor Masayoshi Hino

Masayoshi Hino has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20110235251
    Abstract: A technique which in a portable or laptop ultrasonic diagnosis apparatus, optimizes the position of a hinge mechanism for connecting a display section having a touch panel and a main body and the strength of the main body and also reduce the influence of noise between mutual sections, such as an ultrasonic image processing circuit board, a power source, a CPU board and the like, which are arranged inside the main body is disclosed. According to this technique, on a bottom surface of a bottom case 11 in the main body, a supporting section 12 for supporting a display section 20 is formed to stand upright and extend in a width direction, at a position that is dislocated to a front end F side from a rear end R of a main body 10. Also, a region A in which the ultrasonic image processing circuit board is arranged and regions B, C in which a power source unit and the CPU board are arranged, respectively, are partitioned by means of the supporting section 12.
    Type: Application
    Filed: December 18, 2009
    Publication date: September 29, 2011
    Applicant: PANASONIC CORPORATION
    Inventors: Masao Kimura, Masayoshi Hino, Tatsusi Chihara, Yasuhiro Nakamura, Isamu Takagi, Erina Komatsu
  • Publication number: 20110215263
    Abstract: An ion implantation method and the like by which a circular implantation region and a peripheral implantation region surrounding it and the dose amount of which is different from that of the circular implantation region can be formed within the surface of the substrate without the use of the step rotation of the substrate. The ion implantation method is forms a circular implantation region and a peripheral implantation region surrounding it and a dose amount of which is different from that of the circular implantation region within a surface of the substrate by making variable a scanning speed of the ion beam 4 within the surface of the substrate and changing a scanning speed distribution, in an X direction, of the ion beam within the surface of the substrate for each one-way scanning or each reciprocative scanning, according to a position of the substrate in a Y direction.
    Type: Application
    Filed: August 31, 2009
    Publication date: September 8, 2011
    Applicant: NISSIN ION EQUIPMENT CO., LTD.
    Inventor: Masayoshi Hino
  • Patent number: 7935946
    Abstract: Using a beam current of an ion beam, a dose amount to a substrate, and a reference scan speed, a scan number of the substrate is calculated as an integer value in which digits after a decimal point are truncated. If the scan number is smaller than 2, the process is aborted. If the scan number is equal to or larger than 2, it is determined whether the scan number is even or odd. If the scan number is even, the current scan number is set as a practical scan number. If the scan number is odd, an even scan number which is smaller by 1 than the odd scan number is obtained, and the obtained even scan number is set as a practical scan number. A practical scan speed of the substrate is calculated by using the practical scan number, the beam current, and the dose amount.
    Type: Grant
    Filed: February 11, 2009
    Date of Patent: May 3, 2011
    Assignee: Nissin Ion Equipment Co., Ltd.
    Inventor: Masayoshi Hino
  • Patent number: 7935945
    Abstract: Using a beam current of an ion beam, and a dose amount to a substrate, and an initial value of a scan number of the substrate set to 1, a scan speed of the substrate is calculated. If the scan speed is within the range, the current scan number and the current scan speed are set as a practical scan number and a practical scan speed, respectively. If the scan speed is higher than the upper limit of the range, the calculation process is aborted. If the scan speed is lower than the lower limit of the range, the scan number is incremented by one to calculate a corrected scan number. A corrected scan speed is calculated by using the corrected scan number, etc. The above steps are repeated until the corrected scan speed is within the allowable scan speed range.
    Type: Grant
    Filed: February 11, 2009
    Date of Patent: May 3, 2011
    Assignee: Nissin Ion Equipment Co., Ltd.
    Inventor: Masayoshi Hino
  • Publication number: 20100084584
    Abstract: An illuminating device includes: a light source which is disposed outside a vacuum chamber; a light guide which guides the light emitted from the light source, into the vacuum chamber; a light projecting portion which is fixed in the vacuum chamber, and which emits the light guided by the light guide; a light receiving portion which is attached to a support table of a holder driving device, and which receives the light emitted from the light projecting portion in a state where a holder is positioned in a notch detecting position; a light guide which guides the light received by the light receiving portion; and a light emitting device which is attached to the support table, and which irradiates an outer circumferential portion of a substrate with the light guided by the light guide.
    Type: Application
    Filed: August 21, 2009
    Publication date: April 8, 2010
    Applicant: NISSIN ION EQUIPMENT CO., LTD.
    Inventor: Masayoshi Hino
  • Publication number: 20090200492
    Abstract: Using a beam current of an ion beam, a dose amount to a substrate, and a reference scan speed, a scan number of the substrate is calculated as an integer value in which digits after a decimal point are truncated. If the scan number is smaller than 2, the process is aborted. If the scan number is equal to or larger than 2, it is determined whether the scan number is even or odd. If the scan number is even, the current scan number is set as a practical scan number. If the scan number is odd, an even scan number which is smaller by 1 than the odd scan number is obtained, and the obtained even scan number is set as a practical scan number. A practical scan speed of the substrate is calculated by using the practical scan number, the beam current, and the dose amount.
    Type: Application
    Filed: February 11, 2009
    Publication date: August 13, 2009
    Applicant: NISSIN ION EQUIPMENT CO., LTD.
    Inventor: Masayoshi Hino
  • Publication number: 20090200491
    Abstract: Using a beam current of an ion beam, and a dose amount to a substrate, and an initial value of a scan number of the substrate set to 1, a scan speed of the substrate is calculated. If the scan speed is within the range, the current scan number and the current scan speed are set as a practical scan number and a practical scan speed, respectively. If the scan speed is higher than the upper limit of the range, the calculation process is aborted. If the scan speed is lower than the lower limit of the range, the scan number is incremented by one to calculate a corrected scan number. A corrected scan speed is calculated by using the corrected scan number, etc. The above steps are repeated until the corrected scan speed is within the allowable scan speed range.
    Type: Application
    Filed: February 11, 2009
    Publication date: August 13, 2009
    Applicant: NISSIN ION EQUIPMENT CO., LTD.
    Inventor: Masayoshi Hino