Abstract: A power storage cell includes: an electrode assembly; and a cell case that accommodates the electrode assembly. The cell case has a case main body provided with an opening that opens upward, a lid connected to the case main body, and an elastic member disposed between the case main body and the electrode assembly. The elastic member has a center-facing portion facing a central portion of the electrode assembly, and the center-facing portion has a shape curved to protrude in a direction away from the electrode assembly.

Abstract: A power storage cell comprises an electrode assembly including a plurality of tabs, a cell case, an external terminal, a connecting member, and an insulating member. The connecting member has a current collector plate connected to the plurality of tabs, and a connecting pin connecting the current collector plate and the external terminal. The insulating member includes an insulator that has a shape surrounding the connecting pin and that insulates the connecting pin from the cell case. The connecting pin has a covered portion covered with the insulator, and the covered portion has a fuse portion.

Abstract: A power storage cell includes an electrode assembly, a cell case, and an external terminal. The cell case has a case main body and a lid. The lid has a lid main body connected to an opening of the case main body and charged positively or negatively in the electrode assembly, and a short-circuit member connected to the lid main body, the short-circuit member being able to short-circuit the lid main body and the external terminal. The external terminal includes a terminal plate. The short-circuit member includes an elastic portion made of a conductive resin. The elastic portion is separated from the terminal plate when an internal pressure of the cell case is less than a predetermined pressure, and is elastically deformed to come into contact with the terminal plate when the internal pressure of the cell case is equal to or more than the predetermined pressure.

Abstract: A method of manufacturing a power storage cell includes: preparing a case main body, a lid main body, and an inversion plate; welding the inversion plate to the lid main body; and connecting the lid main body to an opening of the case main body. The lid main body prepared in the preparing includes a pressure release valve. In the welding, the welding of the inversion plate to the lid main body is started from an opposite portion of the inversion plate that is located opposite to a side of the inversion plate facing the pressure release valve, and after welding a periphery of the inversion plate, the welding of the inversion plate to the lid main body is ended at the opposite portion.

Abstract: A vehicle height adjustment device includes a changer, a detector, a vehicle height controller, and a malfunction detector. The changer is configured to change a relative position of a body of a vehicle relative to an axle of a wheel of the vehicle. The detector is configured to detect the relative position of the body of the vehicle relative to the axle of the wheel of the vehicle. The vehicle height controller is configured to control the changer based on a detection value detected by the detector to change the relative position to control a vehicle height, which is a height of the body. When the detection value detected by the detector changes by a predetermined amount or more in a predetermined period of time, the malfunction detector is configured to determine that there is a possibility of a malfunction occurring in the detector.

Abstract: A vehicle height adjustment device includes a changer, a vehicle height controller, and a malfunction detector. The changer is configured to change a relative position of a body of a vehicle relative to an axle of a wheel of the vehicle. The vehicle height controller is configured to change the relative position based on a detection value detected by a detector configured to detect the relative position so as to control a vehicle height, which is a height of the body. The malfunction detector is configured to detect a malfunction in at least one of the changer and the detector, the malfunction causing the vehicle height controller to continue to control the vehicle height to increase.

Abstract: A vehicle height adjustment device includes a changer, a vehicle speed obtainer, a vehicle height controller, and a malfunction detector. The changer is configured to change a relative position of a body of a vehicle, which includes a plurality of wheels, relative to an axle of each of the plurality of wheels of the vehicle. The vehicle speed obtainer is configured to obtain a vehicle speed, which is a traveling speed of the vehicle. The vehicle height controller is configured to control a vehicle height, which is a height of the body, based on the vehicle speed obtained by the vehicle speed obtainer. The malfunction detector is configured to detect a failure of the vehicle speed obtainer to obtain an accurate value of the vehicle speed.

Abstract: Provided are a method of manufacturing a magnetoresistive element and a manufacturing system which are capable of manufacturing a magnetoresistive element achieving further downscaling, i.e., further increase in the degree of integration of the magnetoresistive element while having high magnetic properties. The method includes: preparing a stacked film including one of the two magnetic layers, a layer to form the tunnel barrier layer, and the other of the two magnetic layers, on a substrate; forming multiple separated stacked films on the substrate by separating the stacked film into the multiple stacked films by etching; irradiating side portions of the multiple separated stacked films with ion beams in a pressure-reducible process chamber; and after the irradiation with the ion beams, forming oxide layers or nitride layers on surfaces of the multiple stacked films by introducing an oxidizing gas or a nitriding gas into the process chamber.

Abstract: A vehicle height adjustment device includes a changer, a vehicle height controller, and a malfunction detector. The changer is drivable when supplied with a current and configured to change a relative position of a body of a vehicle relative to an axle of a wheel of the vehicle. The vehicle height controller is configured to perform such control that a target current set based on the relative position is supplied to the changer so as to control a vehicle height, which is a height of the body of the vehicle. The malfunction detector is configured to detect a failure to make the target current flow to the changer.

Abstract: Provided is a plasma treatment apparatus capable of uniform substrate treatment by correction of unevenness in a plasma density distribution. The apparatus has a configuration such that a substrate is treated with plasma, and an evacuated container is provided with an annular antenna arranged around an outer periphery of the container, and is formed of a power supply container, and a process container where the substrate is placed, which communicates with an internal space of the power supply container. The plasma is generated in the power supply container by radio-frequency power supplied to the antenna. The plasma is diffused into the process container by a magnetic field of solenoid coils arranged around an outer periphery of the antenna. The inclination of the magnetic field is adjusted by an inclination adjustment means for adjusting the inclination of the solenoid coils with respect to the process substrate.

Abstract: A vehicle height adjustment device includes a changer, a detector, a vehicle height controller, and a malfunction detector. The changer is configured to change a relative position of a body of a vehicle relative to an axle of a wheel of the vehicle. The detector is configured to detect the relative position of the body of the vehicle relative to the axle of the wheel of the vehicle. The vehicle height controller is configured to control the changer based on a detection value detected by the detector to change the relative position to control a vehicle height, which is a height of the body. When the detection value detected by the detector changes by a predetermined amount or more in a predetermined period of time, the malfunction detector is configured to determine that there is a possibility of a malfunction occurring in the detector.

Abstract: A vehicle height adjustment device includes a changer, a vehicle height controller, and a malfunction detector. The changer is configured to change a relative position of a body of a vehicle relative to an axle of a wheel of the vehicle. The vehicle height controller is configured to change the relative position based on a detection value detected by a detector configured to detect the relative position so as to control a vehicle height, which is a height of the body. The malfunction detector is configured to detect a malfunction in at least one of the changer and the detector, the malfunction causing the vehicle height controller to continue to control the vehicle height to increase.

Abstract: A vehicle height adjustment device includes a changer, a vehicle height controller, and a malfunction detector. The changer is drivable when supplied with a current and configured to change a relative position of a body of a vehicle relative to an axle of a wheel of the vehicle. The vehicle height controller is configured to perform such control that a target current set based on the relative position is supplied to the changer so as to control a vehicle height, which is a height of the body of the vehicle. The malfunction detector is configured to detect a failure to make the target current flow to the changer.

Abstract: A vehicle height adjustment device includes a changer, a vehicle speed obtainer, a vehicle height controller, and a malfunction detector. The changer is configured to change a relative position of a body of a vehicle, which includes a plurality of wheels, relative to an axle of each of the plurality of wheels of the vehicle. The vehicle speed obtainer is configured to obtain a vehicle speed, which is a traveling speed of the vehicle. The vehicle height controller is configured to control a vehicle height, which is a height of the body, based on the vehicle speed obtained by the vehicle speed obtainer. The malfunction detector is configured to detect a failure of the vehicle speed obtainer to obtain an accurate value of the vehicle speed.

Abstract: Provided are a method of manufacturing a magnetoresistive element and a manufacturing system which are capable of manufacturing a magnetoresistive element achieving further downscaling, i.e., further increase in the degree of integration of the magnetoresistive element while having high magnetic properties. The method includes: preparing a stacked film including one of the two magnetic layers, a layer to form the tunnel barrier layer, and the other of the two magnetic layers, on a substrate; forming multiple separated stacked films on the substrate by separating the stacked film into the multiple stacked films by etching; irradiating side portions of the multiple separated stacked films with ion beams in a pressure-reducible process chamber; and after the irradiation with the ion beams, forming oxide layers or nitride layers on surfaces of the multiple stacked films by introducing an oxidizing gas or a nitriding gas into the process chamber.

Abstract: In a case where reactive ion etching using a gas containing an oxygen atom is used for etching or a magnetoresistive element, a magnetic film becomes damaged due to oxidation. Such damage to the element by the oxidation becomes a factor which causes deterioration in element properties. In the etching of the magnetoresistive element according to one embodiment of the present invention, a magnetoresistive film is subjected to ion beam etching and thereafter to reactive ion etching. A side deposition formed by the ion beam etching coats a sidewall of the magnetoresistive film and reduces damage by the oxygen atom during the later reactive ion etching. Also, a time during which the element is exposed to plasma of the gas containing the oxygen atom can be reduced.

Abstract: An object of the present invention is to provide a method which enable a material to be fully embedded into a recess portion with a deposition film left in the recess portion. A method in one embodiment comprises: a first irradiation step of irradiating a deposition film formed on an opening portion of a recess portion in a substrate with a particle beam in a direction at a first angle with respect to a substrate in-plane direction, to remove part of the deposition film in a thickness direction; and a second irradiation step of, after the first irradiation step, irradiating the deposition film with the particle beam in a direction at a second angle which is closer to perpendicular to the substrate in-plane direction than the first angle is, to remove part of the remaining deposition film in the thickness direction.

Abstract: An object of the present invention is to provide a method which enable a material to be fully embedded into a recess portion with a deposition film left in the recess portion. A method in one embodiment comprises: a first irradiation step of irradiating a deposition film formed on an opening portion of a recess portion in a substrate with a particle beam in a direction at a first angle with respect to a substrate in-plane direction, to remove part of the deposition film in a thickness direction; and a second irradiation step of, after the first irradiation step, irradiating the deposition film with the particle beam in a direction at a second angle which is closer to perpendicular to the substrate in-plane direction than the first angle is, to remove part of the remaining deposition film in the thickness direction.

Abstract: Provided are a method of manufacturing a magnetoresistive element and a manufacturing system which are capable of manufacturing a magnetoresistive element achieving further downscaling, i.e., further increase in the degree of integration of the magnetoresistive element while having high magnetic properties. The method includes: preparing a stacked film including one of the two magnetic layers, a layer to form the tunnel barrier layer, and the other of the two magnetic layers, on a substrate; forming multiple separated stacked films on the substrate by separating the stacked film into the multiple stacked films by etching; irradiating side portions of the multiple separated stacked films with ion beams in a pressure-reducible process chamber; and after the irradiation with the ion beams, forming oxide layers or nitride layers on surfaces of the multiple stacked films by introducing an oxidizing gas or a nitriding gas into the process chamber.

Abstract: In fin FET fabrication, side walls of a semiconductor fin formed on a substrate have certain roughness. Using such fins having roughness may induce variations in characteristics between transistors due to their shapes or the like. An object of the present invention is to provide a fin FET fabrication method capable of improving device characteristic by easily reducing the roughness of the side walls of fins after formation. In one embodiment of the present invention, side walls of a semiconductor fin are etched by an ion beam extracted from a grid to reduce the roughness of the side walls.