Abstract: A vehicle height adjustment device includes a changer, a detector, a vehicle height controller, and a malfunction detector. The changer is configured to change a relative position of a body of a vehicle relative to an axle of a wheel of the vehicle. The detector is configured to detect the relative position of the body of the vehicle relative to the axle of the wheel of the vehicle. The vehicle height controller is configured to control the changer based on a detection value detected by the detector to change the relative position to control a vehicle height, which is a height of the body. When the detection value detected by the detector changes by a predetermined amount or more in a predetermined period of time, the malfunction detector is configured to determine that there is a possibility of a malfunction occurring in the detector.

Abstract: A vehicle height adjustment device includes a changer, a vehicle speed obtainer, a vehicle height controller, and a malfunction detector. The changer is configured to change a relative position of a body of a vehicle, which includes a plurality of wheels, relative to an axle of each of the plurality of wheels of the vehicle. The vehicle speed obtainer is configured to obtain a vehicle speed, which is a traveling speed of the vehicle. The vehicle height controller is configured to control a vehicle height, which is a height of the body, based on the vehicle speed obtained by the vehicle speed obtainer. The malfunction detector is configured to detect a failure of the vehicle speed obtainer to obtain an accurate value of the vehicle speed.

Abstract: A vehicle height adjustment device includes a changer, a vehicle height controller, and a malfunction detector. The changer is configured to change a relative position of a body of a vehicle relative to an axle of a wheel of the vehicle. The vehicle height controller is configured to change the relative position based on a detection value detected by a detector configured to detect the relative position so as to control a vehicle height, which is a height of the body. The malfunction detector is configured to detect a malfunction in at least one of the changer and the detector, the malfunction causing the vehicle height controller to continue to control the vehicle height to increase.

Abstract: Provided are a method of manufacturing a magnetoresistive element and a manufacturing system which are capable of manufacturing a magnetoresistive element achieving further downscaling, i.e., further increase in the degree of integration of the magnetoresistive element while having high magnetic properties. The method includes: preparing a stacked film including one of the two magnetic layers, a layer to form the tunnel barrier layer, and the other of the two magnetic layers, on a substrate; forming multiple separated stacked films on the substrate by separating the stacked film into the multiple stacked films by etching; irradiating side portions of the multiple separated stacked films with ion beams in a pressure-reducible process chamber; and after the irradiation with the ion beams, forming oxide layers or nitride layers on surfaces of the multiple stacked films by introducing an oxidizing gas or a nitriding gas into the process chamber.

Abstract: A vehicle height adjustment device includes a changer, a vehicle height controller, and a malfunction detector. The changer is drivable when supplied with a current and configured to change a relative position of a body of a vehicle relative to an axle of a wheel of the vehicle. The vehicle height controller is configured to perform such control that a target current set based on the relative position is supplied to the changer so as to control a vehicle height, which is a height of the body of the vehicle. The malfunction detector is configured to detect a failure to make the target current flow to the changer.

Abstract: Provided is a plasma treatment apparatus capable of uniform substrate treatment by correction of unevenness in a plasma density distribution. The apparatus has a configuration such that a substrate is treated with plasma, and an evacuated container is provided with an annular antenna arranged around an outer periphery of the container, and is formed of a power supply container, and a process container where the substrate is placed, which communicates with an internal space of the power supply container. The plasma is generated in the power supply container by radio-frequency power supplied to the antenna. The plasma is diffused into the process container by a magnetic field of solenoid coils arranged around an outer periphery of the antenna. The inclination of the magnetic field is adjusted by an inclination adjustment means for adjusting the inclination of the solenoid coils with respect to the process substrate.

Abstract: A vehicle height adjustment device includes a changer, a vehicle height controller, and a malfunction detector. The changer is configured to change a relative position of a body of a vehicle relative to an axle of a wheel of the vehicle. The vehicle height controller is configured to change the relative position based on a detection value detected by a detector configured to detect the relative position so as to control a vehicle height, which is a height of the body. The malfunction detector is configured to detect a malfunction in at least one of the changer and the detector, the malfunction causing the vehicle height controller to continue to control the vehicle height to increase.

Abstract: A vehicle height adjustment device includes a changer, a detector, a vehicle height controller, and a malfunction detector. The changer is configured to change a relative position of a body of a vehicle relative to an axle of a wheel of the vehicle. The detector is configured to detect the relative position of the body of the vehicle relative to the axle of the wheel of the vehicle. The vehicle height controller is configured to control the changer based on a detection value detected by the detector to change the relative position to control a vehicle height, which is a height of the body. When the detection value detected by the detector changes by a predetermined amount or more in a predetermined period of time, the malfunction detector is configured to determine that there is a possibility of a malfunction occurring in the detector.

Abstract: A vehicle height adjustment device includes a changer, a vehicle height controller, and a malfunction detector. The changer is drivable when supplied with a current and configured to change a relative position of a body of a vehicle relative to an axle of a wheel of the vehicle. The vehicle height controller is configured to perform such control that a target current set based on the relative position is supplied to the changer so as to control a vehicle height, which is a height of the body of the vehicle. The malfunction detector is configured to detect a failure to make the target current flow to the changer.

Abstract: A vehicle height adjustment device includes a changer, a vehicle speed obtainer, a vehicle height controller, and a malfunction detector. The changer is configured to change a relative position of a body of a vehicle, which includes a plurality of wheels, relative to an axle of each of the plurality of wheels of the vehicle. The vehicle speed obtainer is configured to obtain a vehicle speed, which is a traveling speed of the vehicle. The vehicle height controller is configured to control a vehicle height, which is a height of the body, based on the vehicle speed obtained by the vehicle speed obtainer. The malfunction detector is configured to detect a failure of the vehicle speed obtainer to obtain an accurate value of the vehicle speed.

Abstract: Provided are a method of manufacturing a magnetoresistive element and a manufacturing system which are capable of manufacturing a magnetoresistive element achieving further downscaling, i.e., further increase in the degree of integration of the magnetoresistive element while having high magnetic properties. The method includes: preparing a stacked film including one of the two magnetic layers, a layer to form the tunnel barrier layer, and the other of the two magnetic layers, on a substrate; forming multiple separated stacked films on the substrate by separating the stacked film into the multiple stacked films by etching; irradiating side portions of the multiple separated stacked films with ion beams in a pressure-reducible process chamber; and after the irradiation with the ion beams, forming oxide layers or nitride layers on surfaces of the multiple stacked films by introducing an oxidizing gas or a nitriding gas into the process chamber.

Abstract: In a case where reactive ion etching using a gas containing an oxygen atom is used for etching or a magnetoresistive element, a magnetic film becomes damaged due to oxidation. Such damage to the element by the oxidation becomes a factor which causes deterioration in element properties. In the etching of the magnetoresistive element according to one embodiment of the present invention, a magnetoresistive film is subjected to ion beam etching and thereafter to reactive ion etching. A side deposition formed by the ion beam etching coats a sidewall of the magnetoresistive film and reduces damage by the oxygen atom during the later reactive ion etching. Also, a time during which the element is exposed to plasma of the gas containing the oxygen atom can be reduced.

Abstract: An object of the present invention is to provide a method which enable a material to be fully embedded into a recess portion with a deposition film left in the recess portion. A method in one embodiment comprises: a first irradiation step of irradiating a deposition film formed on an opening portion of a recess portion in a substrate with a particle beam in a direction at a first angle with respect to a substrate in-plane direction, to remove part of the deposition film in a thickness direction; and a second irradiation step of, after the first irradiation step, irradiating the deposition film with the particle beam in a direction at a second angle which is closer to perpendicular to the substrate in-plane direction than the first angle is, to remove part of the remaining deposition film in the thickness direction.

Abstract: An object of the present invention is to provide a method which enable a material to be fully embedded into a recess portion with a deposition film left in the recess portion. A method in one embodiment comprises: a first irradiation step of irradiating a deposition film formed on an opening portion of a recess portion in a substrate with a particle beam in a direction at a first angle with respect to a substrate in-plane direction, to remove part of the deposition film in a thickness direction; and a second irradiation step of, after the first irradiation step, irradiating the deposition film with the particle beam in a direction at a second angle which is closer to perpendicular to the substrate in-plane direction than the first angle is, to remove part of the remaining deposition film in the thickness direction.

Abstract: Provided are a method of manufacturing a magnetoresistive element and a manufacturing system which are capable of manufacturing a magnetoresistive element achieving further downscaling, i.e., further increase in the degree of integration of the magnetoresistive element while having high magnetic properties. The method includes: preparing a stacked film including one of the two magnetic layers, a layer to form the tunnel barrier layer, and the other of the two magnetic layers, on a substrate; forming multiple separated stacked films on the substrate by separating the stacked film into the multiple stacked films by etching; irradiating side portions of the multiple separated stacked films with ion beams in a pressure-reducible process chamber; and after the irradiation with the ion beams, forming oxide layers or nitride layers on surfaces of the multiple stacked films by introducing an oxidizing gas or a nitriding gas into the process chamber.

Abstract: In fin FET fabrication, side walls of a semiconductor fin formed on a substrate have certain roughness. Using such fins having roughness may induce variations in characteristics between transistors due to their shapes or the like. An object of the present invention is to provide a fin FET fabrication method capable of improving device characteristic by easily reducing the roughness of the side walls of fins after formation. In one embodiment of the present invention, side walls of a semiconductor fin are etched by an ion beam extracted from a grid to reduce the roughness of the side walls.

Abstract: In a method for manufacturing the functional element, a protective film covering an underlayer, a patterned multilayer film, and a patterned cap layer are formed, and the underlayer is then processed without newly forming a resist. Thereby, an electrode can be formed in steps less than ever before. Since the protective film formed on the patterned multilayer film and the patterned cap layer is used as a mask, the problem of the misregistration can be prevented.

Abstract: In fin FET fabrication, side walls of a semiconductor fin formed on a substrate have certain roughness. Using such fins having roughness may induce variations in characteristics between transistors due to their shapes or the like. An object of the present invention is to provide a fin FET fabrication method capable of improving device characteristic by easily reducing the roughness of the side walls of fins after formation. In one embodiment of the present invention, side walls of a semiconductor fin are etched by an ion beam extracted from a grid to reduce the roughness of the side walls.

Abstract: A plasma apparatus includes: a chamber which can be evacuated into vacuum; first electrode disposed within the chamber; a magnet mechanism having a magnet provided apart from and above the first electrode; a second electrode provided facing the first electrode; and a magnetic shield member provided in at least one of gaps between the first electrode and the magnet mechanism and between the first electrode and the second electrode.

Abstract: In a case where reactive ion etching using a gas containing an oxygen atom is used for etching or a magnetoresistive element, a magnetic film becomes damaged due to oxidation. Such damage to the element by the oxidation becomes a factor which causes deterioration in element properties. In the etching of the magnetoresistive element according to one embodiment of the present invention, a magnetoresistive film is subjected to ion beam etching and thereafter to reactive ion etching. A side deposition formed by the ion beam etching coats a sidewall of the magnetoresistive film and reduces damage by the oxygen atom during the later reactive ion etching. Also, a time during which the element is exposed to plasma of the gas containing the oxygen atom can be reduced.