Patents by Inventor Masayoshi Kamai

Masayoshi Kamai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11872651
    Abstract: A dissimilar material solid phase bonding method is disclosed wherein one member and another member having different compositions are brought into contact with one another by way of an insert material to form an interface (1) to be bonded, at which the one member and the insert material are in contact with one another, and an interface (2) to be bonded, at which the other member and the insert material are in contact with one another; the temperature of the interface (1) to be bonded and the interface (2) to be bonded is raised by means of frictional heat and/or by electrical heating; a bonding pressure (1) is applied substantially perpendicular to the interface (1) to be bonded; a bonding pressure (2) is applied substantially perpendicular to the interface (2) to be bonded; and the bonding pressure (1) and the bonding pressure (2) are set to different values.
    Type: Grant
    Filed: October 28, 2020
    Date of Patent: January 16, 2024
    Assignee: OSAKA UNIVERSITY
    Inventors: Hidetoshi Fujii, Yoshiaki Morisada, Yasuhiro Aoki, Masayoshi Kamai
  • Patent number: 11745287
    Abstract: To provide a solid phase welding method and a solid phase welding apparatus which are possible to accurately control the welding temperature, to lower the welding temperature and to achieve a solid phase welding of the metallic materials. The present invention provides a solid phase welding method for metallic materials comprising, a first step of forming an interface to be welded by abutting end portions of one material to be welded and the other material to be welded and applying a pressure in a direction substantially perpendicular to the interface to be welded, a second step of raising a temperature of the vicinity of the interface to be welded to a welding temperature by an external heating means, wherein the pressure is set to equal to or more than the yield strength of the one material to be welded and/or the other material to be welded at the welding temperature.
    Type: Grant
    Filed: February 22, 2019
    Date of Patent: September 5, 2023
    Assignee: OSAKA UNIVERSITY
    Inventors: Hidetoshi Fujii, Yoshiaki Morisada, Huihong Liu, Yasuhiro Aoki, Masayoshi Kamai
  • Publication number: 20230138076
    Abstract: The present invention provides: a solid-phase spot-welding method with which the welding temperature can be controlled accurately and with which a reduction in the welding temperature can be achieved, regardless of the type of metal material being welded; and a solid-phase spot-welding device that can be used suitably in this solid-phase spot-welding method.
    Type: Application
    Filed: March 9, 2021
    Publication date: May 4, 2023
    Inventors: Hidetoshi FUJII, Yoshiaki MORISADA, Masayoshi KAMAI, Takumi AIBARA
  • Publication number: 20220371120
    Abstract: A dissimilar material solid phase bonding method is disclosed wherein one member and another member having different compositions are brought into contact with one another by way of an insert material to form an interface (1) to be bonded, at which the one member and the insert material are in contact with one another, and an interface (2) to be bonded, at which the other member and the insert material are in contact with one another; the temperature of the interface (1) to be bonded and the interface (2) to be bonded is raised by means of frictional heat and/or by electrical heating; a bonding pressure (1) is applied substantially perpendicular to the interface (1) to be bonded; a bonding pressure (2) is applied substantially perpendicular to the interface (2) to be bonded; and the bonding pressure (1) and the bonding pressure (2) are set to different values.
    Type: Application
    Filed: October 28, 2020
    Publication date: November 24, 2022
    Applicant: OSAKA UNIVERSITY
    Inventors: Hidetoshi Fujii, Yoshiaki Morisada, Yasuhiro Aoki, Masayoshi Kamai
  • Publication number: 20210107087
    Abstract: To provide a solid phase welding method and a solid phase welding apparatus which are possible to accurately control the welding temperature, to lower the welding temperature and to achieve a solid phase welding of the metallic materials. The present invention provides a solid phase welding method for metallic materials comprising, a first step of forming an interface to be welded by abutting end portions of one material to be welded and the other material to be welded and applying a pressure in a direction substantially perpendicular to the interface to be welded, a second step of raising a temperature of the vicinity of the interface to be welded to a welding temperature by an external heating means, wherein the pressure is set to equal to or more than the yield strength of the one material to be welded and/or the other material to be welded at the welding temperature.
    Type: Application
    Filed: February 22, 2019
    Publication date: April 15, 2021
    Applicant: Osaka University
    Inventors: Hidetoshi FUJII, Yoshiaki MORISADA, Huihong LIU, Yasuhiro AOKI, Masayoshi KAMAI
  • Patent number: 7567037
    Abstract: A high frequency power supplying device and a plasma generation device using the same includes: two or more inductive antennas; high frequency power sources, respectively supplying power to the antennas; and a vacuum chamber on which the antennas are provided so as to generate a plasma by inductive coupling with high frequency power, wherein each of the high frequency power sources is positioned close to a corresponding antenna. On this account, it is possible to reduce unevenness in high frequency voltages generated in the antennas. Thus, even when a diameter and a volume of the plasma generation section are made larger, it is possible to generate much more uniform plasma, thereby stabilizing (i) thin film formation processes based on the plasma and (ii) plasma ion implantation processes.
    Type: Grant
    Filed: January 15, 2004
    Date of Patent: July 28, 2009
    Assignee: Japan Science and Technology Agency
    Inventors: Yuichi Setsuhara, Tatsuo Shoji, Masayoshi Kamai
  • Publication number: 20060057854
    Abstract: A high frequency power supplying device and a plasma generation device using the same includes: two or more inductive antennas; high frequency power sources, respectively supplying power to the antennas; and a vacuum chamber on which the antennas are provided so as to generate a plasma by inductive coupling with high frequency power, wherein each of the high frequency power sources is positioned close to a corresponding antenna. On this account, it is possible to reduce unevenness in high frequency voltages generated in the antennas. Thus, even when a diameter and a volume of the plasma generation section are made larger, it is possible to generate much more uniform plasma, thereby stabilizing (i) thin film formation processes based on the plasma and (ii) plasma ion implantation processes.
    Type: Application
    Filed: January 15, 2004
    Publication date: March 16, 2006
    Inventors: Yuichi Setsuhara, Tatsuo Shoji, Masayoshi Kamai