Patents by Inventor Masayoshi Minami

Masayoshi Minami has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200258736
    Abstract: Described herein is a technique capable of improving the controllability of firm thickness distribution. According to one aspect of the technique, there is provided a substrate processing apparatus including: a process chamber; a first and a second gas supply system; an exhaust system; and a controller for controlling the first and the second gas supply system and the exhaust system to form a film. The first gas supply system includes: a first and a second storage part; a first gas supply port for supplying a gas stored in the first storage part from an outer periphery toward a center of a substrate; and a second gas supply for supplying the gas stored in the second storage part from the outer periphery along a direction more inclined toward the outer periphery than a direction from the outer periphery toward the center of the substrate.
    Type: Application
    Filed: February 11, 2020
    Publication date: August 13, 2020
    Inventors: Kazuyuki OKUDA, Syuzo SAKURAI, Yasuhiro INOKUCHI, Masayoshi MINAMI
  • Publication number: 20200194250
    Abstract: There is provided a technique that includes: (a) forming a film on a substrate in a process container by performing a cycle a predetermined number of times, the cycle including: supplying a precursor gas from a first pipe made of metal and a first nozzle to the substrate in the process container; supplying an oxygen-containing gas from a second pipe made of metal and a second nozzle to the substrate in the process container; and supplying a nitrogen-and-hydrogen-containing gas from the second pipe and the second nozzle to the substrate in the process container; and (b) forming a continuous fluorine-containing layer on an inner surface of the second pipe by supplying a fluorine-containing gas into the second pipe such that the fluorine-containing gas chemically reacts with the inner surface of the second pipe.
    Type: Application
    Filed: December 12, 2019
    Publication date: June 18, 2020
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Kazuhiro HARADA, Masayoshi MINAMI, Akihito YOSHINO, Masaya NISHIDA, Naoko KITAGAWA, Shintaro KOGURA, Shogo OTANI
  • Patent number: 10640869
    Abstract: A method of manufacturing a semiconductor device, includes: supplying precursor gas into process chamber in which plural substrates are accommodated by sequentially performing: supplying inert gas at first inert gas flow rate from first nozzle into the process chamber; supplying the inert gas at second inert gas flow rate higher than the first inert gas flow rate from the first nozzle into the process chamber while supplying precursor gas from the first nozzle into the process chamber; and supplying the inert gas at the first inert gas flow rate from the first nozzle into the process chamber while the process chamber is evacuated from an upstream side of flow of the precursor gas; stopping supply of the precursor gas; removing the precursor gas remaining in the process chamber; supplying reaction gas from a second nozzle into the process chamber; and removing the reaction gas remaining in the process chamber.
    Type: Grant
    Filed: September 20, 2018
    Date of Patent: May 5, 2020
    Assignee: Kokusai Electric Corporation
    Inventors: Kazuyuki Okuda, Masayoshi Minami, Yoshinobu Nakamura, Kosuke Takagi, Yukinao Kaga, Yuji Takebayashi
  • Publication number: 20200095678
    Abstract: There is provided a technique of cleaning an inside of a process container, including: (a) removing substances adhered in a process container set at a first temperature by supplying a first gas at a first flow rate into the process container and exhausting the inside of the process container; (b) physically desorbing and removing residual fluorine in the process container set at a second temperature by supplying a second gas at a second flow rate into the process container and exhausting the inside of the process container; and (c) chemically desorbing and removing residual fluorine in the process container set at a third temperature by supplying a third gas at a third flow rate into the process container and exhausting the inside of the process container.
    Type: Application
    Filed: September 17, 2019
    Publication date: March 26, 2020
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Kazuhiro HARADA, Shingo NOHARA, Yuji URANO, Yasunobu KOSHI, Masayoshi MINAMI
  • Patent number: 10308075
    Abstract: A pneumatic tire includes a cylindrical annular structure disposed around a rotational axis; a carcass portion including a rubber covered cord, at least a portion of the carcass portion being disposed to the outer side of the annular structure in a direction parallel to the rotational axis; and a rubber layer including a tread portion, at least a portion of the rubber layer being disposed to an outer side of the annular structure in a radiation direction with respect to the rotational axis. In such a pneumatic tire, SW/OD?0.30 is satisfied, where SW is a total tire width and OD is a tire outer diameter.
    Type: Grant
    Filed: December 19, 2014
    Date of Patent: June 4, 2019
    Assignee: The Yokohama Rubber Co., LTD.
    Inventors: Masayoshi Kubota, Atsushi Tanno, Yuji Minami
  • Publication number: 20190093222
    Abstract: A method of manufacturing a semiconductor device, includes: supplying precursor gas into process chamber in which plural substrates are accommodated by sequentially performing: supplying inert gas at first inert gas flow rate from first nozzle into the process chamber; supplying the inert gas at second inert gas flow rate higher than the first inert gas flow rate from the first nozzle into the process chamber while supplying precursor gas from the first nozzle into the process chamber; and supplying the inert gas at the first inert gas flow rate from the first nozzle into the process chamber while the process chamber is evacuated from an upstream side of flow of the precursor gas; stopping supply of the precursor gas; removing the precursor gas remaining in the process chamber; supplying reaction gas from a second nozzle into the process chamber; and removing the reaction gas remaining in the process chamber.
    Type: Application
    Filed: September 20, 2018
    Publication date: March 28, 2019
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Kazuyuki OKUDA, Masayoshi MINAMI, Yoshinobu NAKAMURA, Kosuke TAKAGI, Yukinao KAGA, Yuji TAKEBAYASHI
  • Patent number: 10081868
    Abstract: Provided is a technology including a nozzle base end portion which is provided in a processing chamber processing a substrate to extend in a vertical direction and into which a processing gas processing the substrate is introduced, a nozzle distal end portion which is configured in a U shape and in which a gas supply hole supplying the processing gas is provided to a side surface of the substrate, and a gas residence suppressing hole which is provided in a downstream end of the nozzle distal end portion and has a diameter larger than that of the gas supply hole.
    Type: Grant
    Filed: July 15, 2016
    Date of Patent: September 25, 2018
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Kosuke Takagi, Ryota Sasajima, Shintaro Kogura, Naonori Akae, Risa Yamakoshi, Toshiki Fujino, Masato Terasaki, Masayoshi Minami
  • Patent number: 10066294
    Abstract: A method of manufacturing a semiconductor device includes forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing: supplying a precursor gas to the substrate in a process chamber through a first nozzle; supplying an oxygen-containing gas to the substrate in the process chamber through a second nozzle made of quartz and differing from the first nozzle; and supplying a hydrogen-containing gas to the substrate in the process chamber through the second nozzle. The method further includes, prior to performing the act of forming the film, etching a surface of the second nozzle to a depth which falls within a range of 15 ?m or more and 30 ?m or less from the surface of the second nozzle.
    Type: Grant
    Filed: February 25, 2016
    Date of Patent: September 4, 2018
    Assignee: Hitachi Kokusai Electric, Inc.
    Inventors: Ryota Sasajima, Shintaro Kogura, Masayoshi Minami
  • Patent number: 9983074
    Abstract: A force detector capable of preventing short-circuit fault between electrodes and allowing for downsizing. A prescribed region encompasses a projection region defined by projecting a deformation region of a force sensor element, which is deformed when a force transmission member applies a force to the force sensor element, onto a base substrate. A plurality of terminals are provided by four soldering land electrodes formed, respectively, at four corners of the base substrate. The soldering land electrodes are shaped such that a portion of each soldering land electrode is located within the projection region to form a soldering portion.
    Type: Grant
    Filed: June 26, 2015
    Date of Patent: May 29, 2018
    Assignee: HOKURIKU ELECTRIC INDUSTRY CO., LTD.
    Inventors: Masayoshi Minami, Tsutomu Sawai
  • Patent number: 9895727
    Abstract: A method of manufacturing a semiconductor device is disclosed. The method includes processing a substrate by supplying a process gas to the substrate in a process chamber. The method further includes performing a purge to an interior of the process chamber while periodically changing an internal pressure of the process chamber based on a pressure width by setting a process of supplying a purge gas into the process chamber to increase the internal pressure of the process chamber and a process of vacuum-exhausting an interior of the process chamber to decrease the internal pressure of the process chamber to one cycle and repeating the cycle a plurality of times.
    Type: Grant
    Filed: September 22, 2016
    Date of Patent: February 20, 2018
    Assignee: HITACHI KOKUSAI ELECTRIC, INC.
    Inventors: Yoshinobu Nakamura, Masayoshi Minami, Masayuki Asai, Kazuyuki Okuda, Yuji Urano
  • Publication number: 20170160149
    Abstract: A force detector capable of preventing short-circuit fault between electrodes and allowing for downsizing. A prescribed region encompasses a projection region defined by projecting a deformation region of a force sensor element, which is deformed when a force transmission member applies a force to the force sensor element, onto a base substrate. A plurality of terminals are provided by four soldering land electrodes formed, respectively, at four corners of the base substrate. The soldering land electrodes are shaped such that a portion of each soldering land electrode is located within the projection region to form a soldering portion.
    Type: Application
    Filed: June 26, 2015
    Publication date: June 8, 2017
    Inventors: Masayoshi Minami, Tsutomu Sawai
  • Publication number: 20170087606
    Abstract: A method of manufacturing a semiconductor device is disclosed. The method includes processing a substrate by supplying a process gas to the substrate in a process chamber. The method further includes performing a purge to an interior of the process chamber while periodically changing an internal pressure of the process chamber based on a pressure width by setting a process of supplying a purge gas into the process chamber to increase the internal pressure of the process chamber and a process of vacuum-exhausting an interior of the process chamber to decrease the internal pressure of the process chamber to one cycle and repeating the cycle a plurality of times.
    Type: Application
    Filed: September 22, 2016
    Publication date: March 30, 2017
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Yoshinobu NAKAMURA, Masayoshi MINAMI, Masayuki ASAI, Kazuyuki OKUDA, Yuji URANO
  • Publication number: 20170051408
    Abstract: Provided is a technology including a nozzle base end portion which is provided in a processing chamber processing a substrate to extend in a vertical direction and into which a processing gas processing the substrate is introduced, a nozzle distal end portion which is configured in a U shape and in which a gas supply hole supplying the processing gas is provided to a side surface of the substrate, and a gas residence suppressing hole which is provided in a downstream end of the nozzle distal end portion and has a diameter larger than that of the gas supply hole.
    Type: Application
    Filed: July 15, 2016
    Publication date: February 23, 2017
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Kosuke TAKAGI, Ryota SASAJIMA, Shintaro KOGURA, Naonori AKAE, Risa YAMAKOSHI, Toshiki FUJINO, Masato TERASAKI, Masayoshi MINAMI
  • Publication number: 20160244875
    Abstract: A method of manufacturing a semiconductor device includes forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing: supplying a precursor gas to the substrate in a process chamber through a first nozzle; supplying an oxygen-containing gas to the substrate in the process chamber through a second nozzle made of quartz and differing from the first nozzle; and supplying a hydrogen-containing gas to the substrate in the process chamber through the second nozzle. The method further includes, prior to performing the act of forming the film, etching a surface of the second nozzle to a depth which falls within a range of 15 ?m or more and 30 ?m or less from the surface of the second nozzle.
    Type: Application
    Filed: February 25, 2016
    Publication date: August 25, 2016
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Ryota SASAJIMA, Shintaro KOGURA, Masayoshi MINAMI
  • Patent number: 8901013
    Abstract: An oxygen-containing gas and a hydrogen-containing gas are supplied into a pre-reaction chamber heated to a second temperature and having the pressure set to less than an atmospheric pressure, and a reaction is induced between both gases in the pre-reaction chamber to generate reactive species, and the reactive species are supplied into the process chamber and exhausted therefrom, in which a substrate heated to the first temperature is housed and the pressure is set to less than the atmospheric pressure, and processing is applied to the substrate by the reactive species, with the second temperature set to be not less than the first temperature at this time.
    Type: Grant
    Filed: August 2, 2011
    Date of Patent: December 2, 2014
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Kazuhiro Yuasa, Masanao Fukuda, Takafumi Sasaki, Yasuhiro Megawa, Masayoshi Minami
  • Publication number: 20130157474
    Abstract: An oxygen-containing gas and a hydrogen-containing gas are supplied into a pre-reaction chamber heated to a second temperature and having the pressure set to less than an atmospheric pressure, and a reaction is induced between both gases in the pre-reaction chamber to generate reactive species, and the reactive species are supplied into the process chamber and exhausted therefrom, in which a substrate heated to the first temperature is housed and the pressure is set to less than the atmospheric pressure, and processing is applied to the substrate by the reactive species, with the second temperature set to be not less than the first temperature at this time.
    Type: Application
    Filed: August 2, 2011
    Publication date: June 20, 2013
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Kazuhiro Yuasa, Masanao Fukuda, Takafumi Sasaki, Yasuhiro Megawa, Masayoshi Minami
  • Patent number: 7972979
    Abstract: Provided is a substrate processing method comprising: loading a substrate, on which polysilazane is applied, into a substrate process chamber; maintaining an inside of the substrate process chamber, into which the substrate is loaded, in water vapor atmosphere and depressurization atmosphere at a temperature of 400° C.; performing a first heat treatment process on the substrate in a state where the inside of the substrate process chamber is maintained in the water vapor atmosphere and the depressurization atmosphere at the temperature of 400° C.; next, increasing an inner temperature of the substrate process chamber from the temperature of 400° C. in the first heat treatment process to a temperature ranging from 900° C. to 1000° C.; and performing a second heat treatment process on the substrate in a state where the inside of the substrate process chamber is maintained in water vapor atmosphere and depressurization atmosphere at the temperature ranging from 900° C. to 1000° C.
    Type: Grant
    Filed: August 17, 2010
    Date of Patent: July 5, 2011
    Assignee: Hitachi Kokusai Electric, Inc.
    Inventors: Toru Harada, Masayoshi Minami
  • Publication number: 20110065288
    Abstract: Provided is a substrate processing method comprising: loading a substrate, on which polysilazane is applied, into a substrate process chamber; maintaining an inside of the substrate process chamber, into which the substrate is loaded, in water vapor atmosphere and depressurization atmosphere at a temperature of 400° C.; performing a first heat treatment process on the substrate in a state where the inside of the substrate process chamber is maintained in the water vapor atmosphere and the depressurization atmosphere at the temperature of 400° C.; next, increasing an inner temperature of the substrate process chamber from the temperature of 400° C. in the first heat treatment process to a temperature ranging from 900° C. to 1000° C.; and performing a second heat treatment process on the substrate in a state where the inside of the substrate process chamber is maintained in water vapor atmosphere and depressurization atmosphere at the temperature ranging from 900° C. to 1000° C.
    Type: Application
    Filed: August 17, 2010
    Publication date: March 17, 2011
    Applicant: HITACHI-KOKUSAI ELECTRIC INC.
    Inventors: Toru HARADA, Masayoshi MINAMI
  • Patent number: D789311
    Type: Grant
    Filed: June 24, 2016
    Date of Patent: June 13, 2017
    Assignees: HITACHI KOKUSAI ELECTRIC INC., TECHNO QUARTZ INC.
    Inventors: Hiromi Okada, Masayuki Yamada, Satoshi Aizawa, Shinya Morita, Masayoshi Minami, Kazuhisa Osaka
  • Patent number: D791091
    Type: Grant
    Filed: June 24, 2016
    Date of Patent: July 4, 2017
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Hiromi Okada, Shinya Morita, Satoshi Aizawa, Masayoshi Minami, Kazuyuki Okuda, Masayuki Yamada