Abstract: In a semiconductor device, a first metal plate faces a first semiconductor element and a second semiconductor element and is electrically connected to a second terminal. A second metal plate faces the first metal plate while interposing the first semiconductor element between the first and second metal plates, and is electrically connected to a first terminal. A third metal plate faces the first metal plate while interposing the second semiconductor element between the first and third metal plates. The first semiconductor element has an electrode on a surface adjacent to the second metal plate and electrically connected to the second metal plate, and an electrode on a surface adjacent to the first metal plate and electrically connected to the third metal plate. The first semiconductor element is thermally connected to the first metal plate while being electrically insulated from the first metal plate by an insulator.

Abstract: A semiconductor device includes: a first element for one of upper and lower arm circuits; a second element for the other of the upper and lower arm circuits; a first wiring having a first mounting portion on which the first element is disposed and a first power supply terminal portion connected with the first mounting portion; a second wiring having a second mounting portion on which the second element is disposed and an output terminal portion connected with the second mounting portion; a clip configured to electrically connect a main electrode of the first element and the second mounting portion; and a third wiring having a connection portion to which a main electrode of the second element is connected and a second power supply terminal portion connected with the connection portion. The third wiring is extended parallel to the first wiring and the clip.

Abstract: A first module includes a first switch having a first electrode and a second electrode; a second switch having a third electrode and a fourth electrode; a second internal bus bar connecting the second electrode with the third electrode; and a first resin member encapsulating those components. A second module with includes a third switch having a fifth electrode and a sixth electrode; a fourth switch having a seventh electrode and an eighth electrode; a fifth internal bus bar connecting the sixth electrode with the seventh electrode; and a second resin member encapsulating those components. At least one of a first terminal of the second internal bus bar exposed from the first resin member and a second terminal of the fifth internal bus bar exposed from the second resin member extends toward the other and are directly joined with each other.

Abstract: First switches include first electrodes, which are mutually connected with each other via a first internal bus bar, and second electrodes, which are mutually connected with each other via a second internal bus bar. A first resin member encapsulates the first switches and the first and second internal bus bars. Second switches include third electrodes, which are mutually connected with each other via a third internal bus bar, and fourth electrodes, which are mutually connected with each other via a fourth internal bus bar. A second resin member that encapsulates the second switches and the third and fourth internal bus bars. The second module is arranged alongside with the first module. The second internal bus bar and the third internal bus bar are partially exposed from the first resin member and the second resin member, respectively, and are directly joined with each other.

Abstract: A semiconductor device comprises a semiconductor substrate including a main surface, an electrode, a voltage resistive structure portion, and an intervening portion. A semiconductor device further comprises a solder and a terminal which is made a metal, is provided on the solder and has a non-wetting portion that is not wetted with the solder. A length of the intervening portion along the main surface is longer than a length of the non-wetting portion of the terminal.

Abstract: A semiconductor device includes a first switching element; a second switching element; a first metal member; a second metal member; a first terminal that has a potential on a high potential side; a second terminal that has a potential on a low potential side; a third terminal that has a midpoint potential; and a resin part. A first potential part has potential equal to potential of the first terminal. A second potential part has potential equal to potential of the second terminal. A third potential part has potential equal to potential of the third terminal. A first creepage distance between the first potential part and the second potential part is longer than a minimum value of a second creepage distance between the first potential part and the third potential part and a third creepage distance between the second potential part and the third potential part.

Abstract: A semiconductor device has a joint part in which a first conducting part and a second conducting part are joined by a joint material. The first conducting part has a high wettability region and a low wettability region in a surface opposite to the second conducting part. The low wettability region is adjacent to the high wettability region to define an outer periphery of the high wettability region and has wettability lower than the high wettability region to the joint material. The high wettability region has an overlap region overlapping a formation region of the joint part in the second conducting part in a planar view, and a non-overlap region connected to the overlap region and not overlapping the formation region of the joint part in the second conducting part. The non-overlap region includes a holding region capable of holding the joint material that is surplus for the joint part.

Abstract: A first module includes a first switch having a first electrode and a second electrode; a second switch having a third electrode and a fourth electrode; a second internal bus bar connecting the second electrode with the third electrode; and a first resin member encapsulating those components. A second module with includes a third switch having a fifth electrode and a sixth electrode; a fourth switch having a seventh electrode and an eighth electrode; a fifth internal bus bar connecting the sixth electrode with the seventh electrode; and a second resin member encapsulating those components. At least one of a first terminal of the second internal bus bar exposed from the first resin member and a second terminal of the fifth internal bus bar exposed from the second resin member extends toward the other and are directly joined with each other.

Abstract: First switches include first electrodes, which are mutually connected with each other via a first internal bus bar, and second electrodes, which are mutually connected with each other via a second internal bus bar. A first resin member encapsulates the first switches and the first and second internal bus bars. Second switches include third electrodes, which are mutually connected with each other via a third internal bus bar, and fourth electrodes, which are mutually connected with each other via a fourth internal bus bar. A second resin member that encapsulates the second switches and the third and fourth internal bus bars. The second module is arranged alongside with the first module. The second internal bus bar and the third internal bus bar are partially exposed from the first resin member and the second resin member, respectively, and are directly joined with each other.

Abstract: In a semiconductor device, a first metal plate faces a first semiconductor element and a second semiconductor element and is electrically connected to a second terminal. A second metal plate faces the first metal plate while interposing the first semiconductor element between the first and second metal plates, and is electrically connected to a first terminal. A third metal plate faces the first metal plate while interposing the second semiconductor element between the first and third metal plates. The first semiconductor element has an electrode on a surface adjacent to the second metal plate and electrically connected to the second metal plate, and an electrode on a surface adjacent to the first metal plate and electrically connected to the third metal plate. The first semiconductor element is thermally connected to the first metal plate while being electrically insulated from the first metal plate by an insulator.

Abstract: A semiconductor device includes: a plurality of control modules that controls a rotating electric machine. Each control module includes at least two sets of arms, each set including high-side and low-side switching elements that provide an inverter. A plurality of arms of each control module are coupled in parallel to each other with respect to a bus bar coupled to one power source. Each control module includes a metal plate on which the high-side and low-side switching elements are mounted, and mediates an electric coupling with the power source. Each metal plate includes a first metal plate on which one set of arms is disposed, a second metal plate on which another set of arms is disposed, and a coupling plate that couples the first and second metal plates.

Abstract: A semiconductor device includes: a plurality of control modules to control a rotating electric machine. The plurality of control modules are circularly arranged around a rotary shaft of the rotating electric machine. Each control module includes at least one switching element supplied with a current from a bus bar coupled to a power source. The at least one switching element in one of the control modules under a structural condition of arrangement has a lower resistance than another switching element.

Abstract: A semiconductor device includes: a plurality of control modules to control a rotating electric machine. The plurality of control modules are circularly arranged around a rotary shaft of the rotating electric machine. Each control module includes at least one switching element supplied with a current from a bus bar coupled to a power source. The at least one switching element in one of the control modules under a structural condition of arrangement has a lower resistance than another switching element.

Abstract: A semiconductor device includes: a plurality of control modules that controls a rotating electric machine. Each control module includes at least two sets of arms, each set including high-side and low-side switching elements that provide an inverter. A plurality of arms of each control module are coupled in parallel to each other with respect to a bus bar coupled to one power source. Each control module includes a metal plate on which the high-side and low-side switching elements are mounted, and mediates an electric coupling with the power source. Each metal plate includes a first metal plate on which one set of arms is disposed, a second metal plate on which another set of arms is disposed, and a coupling plate that couples the first and second metal plates.

Abstract: A semiconductor device includes a first switching element; a second switching element; a first metal member; a second metal member; a first terminal that has a potential on a high potential side; a second terminal that has a potential on a low potential side; a third terminal that has a midpoint potential; and a resin part. A first potential part has potential equal to potential of the first terminal. A second potential part has potential equal to potential of the second terminal. A third potential part has potential equal to potential of the third terminal. A first creepage distance between the first potential part and the second potential part is longer than a minimum value of a second creepage distance between the first potential part and the third potential part and a third creepage distance between the second potential part and the third potential part.

Abstract: The semiconductor device includes a semiconductor element, and an electro-conductive first plate-like part electrically connected to a top-face-side electrode of the semiconductor element and including a first joint part projecting from a side face, and an electro-conductive second plate-like part including a second joint part projecting from a side face. A bottom face of the first joint part and a top face of the second joint part face one another, and are electrically connected via an electro-conductive bonding material. A bonding-material-thickness ensuring means is provided in a zone where the bottom face of the first joint part and the top face of the second joint part face one another to ensure a thickness of the electro-conductive bonding material between an upper portion of a front end of the second joint part and the bottom face of the first joint part.

Abstract: A semiconductor device includes: opposed first and second metal plates; a plurality of semiconductor elements each interposed between the first metal plate and the second metal plate; a metal block interposed between the first metal plate and each of the semiconductor elements; a solder member interposed between the first metal plate and the metal block and connecting the first metal plate to the metal block; and a resin molding sealing the semiconductor elements and the metal block. A face of the first metal plate, which is on an opposite side of a face of the first metal plate to which the metal block is connected via the solder member, is exposed from the resin molding. The first metal plate has a groove formed along an outer periphery of a region in which the solder member is provided, the groove collectively surrounding the solder member.

Abstract: A terminal connection structure includes a male terminal; and a female terminal having an elasticity and configured to have the male terminal fitted therein such that the female terminal sandwiches the male terminal from opposite sides; wherein the male includes a base material, a first primary coat coated on the base material, a second primary coat coated on the first primary coat, and a surface layer coated on the second primary coat, and the first primary coat and the second primary coat have different hardnesses.

Abstract: A semiconductor device includes: opposed first and second metal plates; a plurality of semiconductor elements each interposed between the first metal plate and the second metal plate; a metal block interposed between the first metal plate and each of the semiconductor elements; a solder member interposed between the first metal plate and the metal block and connecting the first metal plate to the metal block; and a resin molding sealing the semiconductor elements and the metal block. A face of the first metal plate, which is on an opposite side of a face of the first metal plate to which the metal block is connected via the solder member, is exposed from the resin molding. The first metal plate has a groove formed along an outer periphery of a region in which the solder member is provided, the groove collectively surrounding the solder member.

Abstract: A terminal connection structure includes a male terminal; and a female terminal having an elasticity and configured to have the male terminal fitted therein such that the female terminal sandwiches the male terminal from opposite sides; wherein the male includes a base material, a first primary coat coated on the base material, a second primary coat coated on the first primary coat, and a surface layer coated on the second primary coat, and the first primary coat and the second primary coat have different hardnesses.