Patents by Inventor Masayoshi SAMMI

Masayoshi SAMMI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device and method of forming the same
    Patent number: 8841722
    Abstract: A semiconductor device includes a semiconductor substrate having a first groove. The first groove has a bottom and first and second side surfaces opposite to each other. A first gate insulator extends alongside the first side surface. A first gate electrode is formed in the first groove and on the first gate insulator. A second gate insulator extends alongside the second side surface. A second gate electrode is formed in the first groove and on the second gate insulator. The second gate electrode is separate from the first gate electrode.
    Type: Grant
    Filed: May 7, 2012
    Date of Patent: September 23, 2014
    Assignee: PS4 Luxco S.A.R.L.
    Inventor: Masayoshi Sammi
  • METHOD OF EXPOSING A SEMICONDUCTOR WAFER AND EXPOSURE APPARATUS
    Publication number: 20140036244
    Abstract: An exposure apparatus includes an autofocus scan processor configured to generate a detection signal indicating a defocused portion of a resist film over a semiconductor substrate, an exposure scan processor configured to perform an exposure process for the resist film, and a controller configured to feed back the detection signal from the autofocus scan processor to the exposure scan processor.
    Type: Application
    Filed: October 8, 2013
    Publication date: February 6, 2014
    Applicant: ELPIDA MEMORY, INC.
    Inventors: Masayoshi SAMMI, Hisanori UENO
  • SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
    Publication number: 20120286358
    Abstract: A semiconductor device includes a semiconductor substrate having a first groove. The first groove has a bottom and first and second side surfaces opposite to each other. A first gate insulator extends alongside the first side surface. A first gate electrode is formed in the first groove and on the first gate insulator. A second gate insulator extends alongside the second side surface. A second gate electrode is formed in the first groove and on the second gate insulator. The second gate electrode is separate from the first gate electrode.
    Type: Application
    Filed: May 7, 2012
    Publication date: November 15, 2012
    Applicant: ELPIDA MEMORY, INC.
    Inventor: Masayoshi SAMMI