Abstract: The receiver unit includes a receiver body, a housing containing this receiver body, a cord connected to the receiver body, and a cord protector for protecting the cord. The cord protector is a plate-like member having a substantially rectangular shape, and includes an engaging portion and a semicircular portion. The cord protector is formed of soft material such as urethane rubber having Shore hardness of about A90, and its wall thickness is set to be 0.3 to 0.6 mm (0.5 mm, for example).

Abstract: The receiver unit includes a receiver body, a housing containing this receiver body, a cord connected to the receiver body, and a cord protector for protecting the cord. The cord protector is a plate-like member having a substantially rectangular shape, and includes an engaging portion and a semicircular portion. The cord protector is formed of soft material such as urethane rubber having Shore hardness of about A90, and its wall thickness is set to be 0.3 to 0.6 mm (0.5 mm, for example).

Abstract: Biaxially drawn polyamide films having an excellent levelness are prepared as follows. A substantially unoriented polyamide film is heated at 45.degree.-65.degree. C., and then drawn in the longitudinal direction at a deformation rate of at least 10,000%/min. and a draw ratio of 2.7-3.5 by a roll stretcher. The drawn film is immediately transferred to the lateral drawing position at 45.degree.-60.degree. C. within a time (t):t=e.sup.(3.9-0.053T.sbsp.1.sup.) where e=the base of natural logarithm and T.sub.1 =film temperature during this period of time (t), which is 45.degree.-60.degree. C. The thickness profile of the film at the starting position of lateral drawing is gradually reduced from the side and portions toward the central portion of the width so that the film thickness at the central portion is 75-90% of the film thickness at the side end portions. The film is drawn in the lateral direction at an average deformation rate of 2,000-10,000%/min.

Abstract: A magnetic recording medium comprising a non-magnetic base and a magnetic layer attached thereto consisting essentially of magnetic powders and a binder. Included within the binder are spherical small sized particles of a benzoguanamine-formaldehyde resin or a benzoguanamine-melamine-formaldehyde resin which serve to improve the running characteristics, reduce the friction coefficient, and improve the strength of the layer.

Abstract: A broad and continuous sheet or film is uniformly heated in a highly precise manner and with a specific heat profile by using a plurality of radiation heating furnaces, wherein in the interior of each radiation heating furnace, a plurality of rows of heaters are arranged rectangularly to the direction of delivery of the sheet or film to be heated. A thermometer for measuring the temperature of the sheet or film is arranged in the vicinity of an outlet for the sheet or film outside each radiation heating furnace. Outputs of heaters arranged within the radiation heating furnaces located just before the respective thermometers are controlled based on the temperatures detected by the respective thermometers by using a computer.

Abstract: A magnetic recording medium is disclosed, in which a magnetic layer is formed on one surface of the non-magnetizable substrate and a back coating layer consisting essentially of a binder and a non-magnetizable pigment is formed on the other surface of the substrate. In the back coating layer, more than 80 weight percent of the binder is a polyurethane resin or a polyester resin having hydrophilic polar groups. The back coating layer also contains carbon black for preventing electrostatic charging and pigments with Mohs hardness higher than 5 for improving durability. The carbon black to the pigments weight ratio is set to be in the range of 95:5 to 60:40.

Abstract: This invention concerns a so-called double-moat uni-surface type semiconductor device in which two concentric moats are provided in one main surface of the substrate and the edges of the two pn-junctions for blocking main circuit voltages applied to the device are exposed in the surfaces of the moats. Semiconductor layers having high impurity concentrations and serving as channel stoppers are formed on the semiconductor layers exposed in the one main surface of the substrate, contiguous to the moats and spaced apart from the pn-junctions, each high impurity concentration layer having the same conductivity type as the semiconductor layer on which it is formed. The moats are filled with surface passivating material.

Abstract: A process for continuously heat setting a tubular film of biaxially oriented polyethylene terephthalate in a state expanded with a gaseous material and taking the heat set film up on a winder which comprises carrying out the heat setting in a heat setting chamber wherein the temperature is controlled so as to be initially in the range of about 220.degree. C.-240.degree. C. in the first zone of heat setting and thereafter declines to about 195.degree. C.-215.degree. C. in the final zone while the length of the film is increased about 2% - 7% and the diameter of the film is reduced about 5 - 15% from the corresponding dimensions of the film before heat setting, the film then being taken up by a rotary winder.

Abstract: Method for preparing a biaxially oriented polyvinyl alcohol film by extruding a mixture of polyvinyl alcohol and water, and if desired, incorporated with a polyhydric alcohol, in a tubular form, drying the tubular film to give a tubular non-stretched film having a degree of crystallization of not more than 44 % and a water content of not more than 20 % by weight, and biaxially stretching the non-stretched film at a stretching ratio of not less than 2 in each of the machine and transverse directions by means of inflation under conditions such that the film surface at the starting point of stretching is maintained at a temperature in the range from about 60.degree. to about 150.degree.C., the surface of the film reaching a maximum temperature at the middle portion of a stretching zone extending from said starting point to a point where the tube reaches a maximum diameter and the difference between maximum and minimum surface temperatures in the stretching zone does not vary more than about 15.degree.C.

Abstract: A method of manufacturing semiconductor devices comprising a semiconductor element having a PN junction in which an N.sup.+-type region is formed in an N-type region constituting the PN junction and another N-type region is formed around the N.sup.+-type region and a metal layer is provided on the other N-type region and the N.sup.+-type region, thereby providing a mechanically and electrically improved ohmic contact to the semiconductor element.