Abstract: A lead frame for use in producing of a semiconductor integrated circuit comprises a lead frame member, a plurality of leads, a tie bar, a plurality of auxiliary leads, a support-stay portion and a connecting portion. A semiconductor element such as an IC chip is mounted on a semiconductor-element-mounting portion of the lead frame member, while the leads are arranged along and extending from a side portion of the lead frame member. The tie bar is connected among the leads and auxiliary leads at their tip-edge portions. Herein, the auxiliary leads are electrically unconnected from the semiconductor element. Further, the support-stay portion is provided at a corner portion of the lead frame member. The connecting portion is provided between a base-edge portion of the support-stay portion and a base portion of the auxiliary lead. A location of the connecting portion is selected in such a manner than the connecting portion will be unaffected by bending of the leads.

Abstract: A lead frame at least provides a semiconductor-element-mounting portion, plural leads and plural auxiliary leads. The auxiliary leads are arranged to be associated with plural leads, while a tie bar is provided and connected among the leads. According to a method of making the lead frame, an IC-chip mounting process, a wire-bonding process, a sealing process, a resin-cutting process and a dambar-cutting process are sequentially effected on the lead frame. After effecting the dambar-cutting process, a thin-plating process is effected so as to form a thin-plated layer, approximately having a thickness of 5 .mu.m to 15 .mu.m, on the leads. Then, the leads are bent by a predetermined bending process. Thereafter, a thick-plating process is effected so as to form an uniform thick-plated layer, approximately having a thickness of 15 .mu.m to 100 .mu.m, on the leads. After effecting the thick-plating process, a trimming process is effected on the leads.