Abstract: It is to provide a porous film which is excellent in gas permeability (air permeability) and moisture permeability (water vapor permeability), and is excellent in anti-leakage properties and anti-bleeding properties against a liquid, hiding properties and masking properties at an adhesion portion, and a process for producing it. A porous film obtained by melting and kneading a resin composition containing a polyolefin resin {component (A)} and a bulking agent {component (B)} as the main components, and a silicone {component (C)}, or a silicone {component (C)} and castor oil {component (D)}, followed by drawing, which shrinks by from 40 to 95% in one direction and expands by from 5 to 40% in a direction transverse thereto, when soaked in a silicone oil of 200 C for 60 seconds, and a process for producing the above porous film, are provided.

Abstract: An inductor component contains a drum magnetic core made of a magnetic material having a structure including integrated flanges at both ends of a columnar material, a coil wound around the columnar material in the drum magnetic core and placed between the flanges, and a permanent magnet placed in the neighborhood of the drum magnetic core with the coil wound around. This inductor component contains a sleeve core fitted to the outside of the drum magnetic core. The permanent magnet is placed in at least one gap in a closed magnetic circuit formed with the drum magnetic core and the sleeve core in order to apply a direct-current magnetic field in the direction opposite to the direction of a magnetic field generated by a magnetomotive force due to the coil.

Abstract: A semiconductor device has a reduced contact resistance between a tungsten film and a polysilicon layer and has a gate electrode prevented from being depleted for a reduced gate resistance. According to a method of fabricating such a semiconductor device, a semiconductor device having a gate electrode of a polymetal gate structure which comprises a three-layer structure having a tungsten (W) film, a tungsten nitride (WN) film, and a polysilicon (PolySi) layer, is manufactured by nitriding the sides of the gate electrode at a nitriding temperature ranging from 700° C. to 950° C. in an ammonia atmosphere after the gate electrode is formed and before side selective oxidization is performed on the gate electrode.

Abstract: The present invention relates to a process for preparing a &bgr;-oxonitrile compound or an alkali metal salt thereof which comprises reacting a carboxylic ester represented by the formula (1):

Abstract: A wire harness constituted by bundling a plurality of pieces of line streak members by a predetermined exterior member is regarded to be an elastic body having a circular shape and coupled with a plurality of beam elements maintaining a linearity to form a model and a shape of the wire harness is predicted by utilizing a finite element method. When an end portion of the wire harness is displaced by an input apparatus, a shape 1c physically in equilibrium is automatically calculated by the finite element method and is drawn again. That is, the shape physically in equilibrium is automatically calculated and drawn by following a shape design by well-known operation by CAD at a background thereof.

Abstract: The present invention provides a magnetic head having improved characteristics, using a magnetoresistive device in which current flows across the film plane such as a TMR device. In a first magnetic head of the present invention, when the area of a non-magnetic layer is defined as a device cross-section area, and the area of a yoke is defined as a yoke area, viewed along the direction perpendicular to the surface of the substrate over which the yoke and the magnetoresistive device are formed, then the device cross-section area is not less than 30% of the yoke area, so that a resistance increase of the device cross-section area is suppressed. In a second magnetic head of the present invention, a magnetoresistive device is formed on a substrate, and a yoke is provided above a non-magnetic layer constituting the device.

Abstract: With a view to preventing the oxidation of a metal film at the time of light oxidation treatment after gate patterning and at the same time to making it possible to control the reproducibility of oxide film formation and homogeneity of oxide film thickness at gate side-wall end portions, in a gate processing step using a poly-metal, a gate electrode is formed by patterning a gate electrode material which has been deposited over a semiconductor wafer 1A having a gate oxide film formed thereon and has a poly-metal structure and then, the principal surface of the semiconductor wafer 1A heated to a predetermined temperature or vicinity thereof is supplied with a hydrogen gas which contains water at a low concentration, the water having been formed from hydrogen and oxygen by a catalytic action, to selectively oxidize the principal surface of the semiconductor wafer 1A, whereby the profile of the side-wall end portions of the gate electrode is improved.

Abstract: In a semiconductor device in which an LSI chip comprising electrodes with a 100 &mgr;m pitch or less and 50 or more pins is mounted directly on an organic substrate, a mounting structure and a manufacturing method thereof are provided excellent in the solder resistant reflow property, temperature cycle reliability and high temperature/high humidity reliability of the semiconductor device. Electrode Au bumps of the chip and an Au film at the uppermost surface of connection terminals of the substrate are directly flip-chip bonded by Au/Au metal bonding and the elongation of the bonded portion of the Au bump is 2 &mgr;m or more. The method of obtaining the bonded structure involves a process of supersonically bonding both of the bonding surfaces within 10 min after sputter cleaning, under the bonding conditions selected from room temperature on the side of the substrate, room temperature to 150° C.

Abstract: A seal mechanism with improved pressure tightness is provided to eliminate a return piping to a fuel tank used for reducing pressure applied to the seal mechanism in a high pressure fuel pump. The seal mechanism includes a stress reduction mechanism for reducing the stress generated at the junction between its retaining member and flexible member.

Abstract: An ink-jet recording head has nozzles capable of independent ejection and being arranged in high density, in which strength is high, fabricating yield is high, a cost is reduced, ejection efficiency is high, and ejection repeating frequency is high. In this ink-jet recording head, there are two-dimensionally arranged units, in each of which an ink pressure chamber, a partition wall serving as a driving portion, a pressure buffer chamber and a fixed wall are arranged in the same direction.

Abstract: A gearing radius of a worm wheel is set corresponding to a neighborhood region of a steering neutral position, in such a way as to be relatively large. Thus, backlash is made to be relatively small. This prevents noises from being produced when an automobile travels straight on a bad road. Conversely, the backlash is set corresponding to most of regions of steering angles, which are within the remaining region thereof, in such a manner as to be relatively large. Thus, increase in resistance torque is suppressed. This is realized by a simple configuration in which a bias portion is provided in a part of the profile of teeth. In a case where power is transmitted from an electric motor by a worm shaft and a worm wheel during a steering operation, noises are hard to be produced even when the automobile travels on a bad road.

Abstract: A switching chip (101) using silicon as the base material is located on the upper surface of a cooling mechanism formed of a heat sink (115), an insulating substrate (114) and a conductive plate (108), with a first conductive layer (109A) sandwiched in between. Further, a diode chip (102) having a smaller area than a cathode electrode (103) and using a wide gap semiconductor as the base material is located on the cathode electrode (103) which has a smaller area than an anode electrode (105), with a second conductive layer (109B) sandwiched in between. A closed container (117) encloses every structural component except an exposed portion of a bottom surface (115BS) in the interior space.

Abstract: A method of assisting a wiring design of a wiring structure includes the steps of: regarding the wiring structure constituted by a plurality of pieces of line streak members as an elastic body which has a circular section and in which a plurality of beam elements a linearity of which is maintained are coupled with each other; applying information concerning a shape characteristic, a material characteristic and a constraining condition of the wiring structure as a predetermined condition to a finite element method; calculating a predicted shape of the displaced wiring structure such that the predetermined condition is satisfied; further calculating a characteristic value with respect to vibration for the calculated predicted shape; and outputting the calculated predicted shape and the calculated characteristic value.

Abstract: In a method of fabricating a semiconductor device having a MISFET of trench gate structure, a trench is formed from a major surface of a semiconductor layer of first conductivity type which serves as a drain region, in a depth direction of the semiconductor layer, a gate insulating film including a thermal oxide film and a deposited film is formed over the internal surface of the trench, and after a gate electrode has been formed in the trench, impurities are introduced into the semiconductor substrate of first conductivity type to form a semiconductor region of second conductivity type which serves as a channel forming region, and impurities are introduced into the semiconductor region of second conductivity type to form the semiconductor region of first conductivity type which serves as a source region.

Abstract: An insulating substrate has a plurality of semiconductor chip mounting sections arranged one by one along a predetermined direction extending from one to the other end of the substrate, and a resin transmitting port. The resin transmitting port is located at a position in the vicinity of the one end along the predetermined direction and other than the semiconductor chip mounting section arranged nearest to the one end. A semiconductor chip is mounted on a respective semiconductor chip mounting section. A mold defines a cavity, including first and second cavity sections on the respective surfaces of the substrate, in such a manner that the first and second cavities communicates with each other by means of the resin transmitting port. A sealing resin is rejected into the cavity, so that the resin flows through the resin transmitting port to fill both of the first and second cavity sections with the sealing resin.

Abstract: A liquid crystal display device includes a first transparent substrate having a plurality of electrodes, a second transparent substrate, a liquid crystal interposed between the first transparent substrate and the second transparent substrate, an illumination light source disposed on a back side of the first transparent substrate, pixel regions arranged in a matrix, and a reflecting film formed between the first transparent substrate and the electrodes. The reflecting film has at least one light transmission aperture in each pixel region and without slits at positions corresponding to gaps between adjacent ones of the pixel regions.

Abstract: In a magnetic tape apparatus for controlling a running of a magnetic tape to stop at a reference stop position, a control part controls the feed reel shaft and the take-up reel shaft to reel the magnetic tape and a stop position control part displaces a stop position of the magnetic tape from the reference position wherein the control part activates the stop position control part to displace the stop position when the control part stops running the magnetic tape.

Abstract: When setting a recording power for use in recording optical information on a DVD-R, by using any one of sectors provided on the DVD-R as a PCA, whether a predetermined special detected signal is detected or not in the sectors is checked (Step S2), a non-used sector where no special detected signal is detected, of the sectors, is retrieved, based on the check result (Step S3), a mark signal for obtaining the special detected signal is recorded in the retrieved non-used sector (Step S5), a setting signal for setting a recording power is recorded in the non-used sector excluding the area where at least the mark signal is recorded (Step S6), and the recorded setting signal is optically detected to set the recording power (Step S13).

Abstract: An object of the present invention is to provide a microorganism which has a high ability of producing docosahexaenoic acid. The present invention provides a Thraustochytrium strain which has an ability of producing docosahexaenoic acid, and use thereof.

Abstract: A circuit board testing apparatus for testing continuity and/or short-circuit of wirings formed on a circuit board, includes an electromagnetic wave irradiator which irradiates first terminals of the wirings with an electromagnetic wave so that electrons are discharged from the first terminals by photoelectric effect. Discharged electrons are trapped by an electrode which is electrically biased to have a higher potential than that of the second terminals of the wirings, thereby causing an electric current to flow through the wirings via the electrode. Existence of open-circuit and/or short-circuit of the wirings is judged based on the current flowing the wirings.