Patents by Inventor Masayoshi Tsuji

Masayoshi Tsuji has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9641027
    Abstract: A wireless power feeding system capable of long distance and highly efficient space transmission of power is provided. A wireless power feeding system includes a power transmitter, a power receiver, and a power receiving body. The power transmitter generates electromagnetic waves. The power receiver is supplied with power by means of the electromagnetic waves received from the power transmitter using a magnetic field resonance phenomenon. The power receiving body is inserted into an electromagnetic field created by the power transmitter and the power receiver, and receives power by means of the electromagnetic field.
    Type: Grant
    Filed: May 25, 2012
    Date of Patent: May 2, 2017
    Assignee: NEC Corporation
    Inventors: Masayoshi Tsuji, Wataru Hattori, Masahiro Tanomura, Shuhei Yoshida
  • Publication number: 20140339913
    Abstract: A wireless power feeding system capable of long distance and highly efficient space transmission of power is provided. A wireless power feeding system includes a power transmitter, a power receiver, and a power receiving body. The power transmitter generates electromagnetic waves. The power receiver is supplied with power by means of the electromagnetic waves received from the power transmitter using a magnetic field resonance phenomenon. The power receiving body is inserted into an electromagnetic field created by the power transmitter and the power receiver, and receives power by means of the electromagnetic field.
    Type: Application
    Filed: May 25, 2012
    Publication date: November 20, 2014
    Applicant: NEC CORPORATION
    Inventors: Masayoshi Tsuji, Wataru Hattori, Masahiro Tanomura, Shuhei Yoshida
  • Patent number: 7974328
    Abstract: The present invention provides a surface-emission type semiconductor laser wherein an effective length of a cavity is reduced, thereby enabling to realize a higher-speed direct modulation. In the surface-emission type semiconductor laser according to the present invention, when supposing the optical path length (L) of a resonator part relative to a lasing wavelength ?0 to be given as 0.9×?0?L?1.1×?0, and denoting the refractive indexes of a high refractive index layer and a low refractive index layer of a dielectric DBR by nH1 and nL1; the average refractive index within an optical path length ?0/4 in the semiconductor in contact with the dielectric DBR by nS1; and the refractive indexes of the high refractive index layer and the low refractive index layer of a semiconductor DBR by nH2 and nL2, respective materials to be used are selected so as to satisfy the following conditions (1) and (2): nH1>f(nS1)nL12+g(nS1)nL1+h(nS1),??(1) where f(nS1)=0.0266 nS12?0.2407 nS1+0.6347; g(nS1)=?0.0508 nS12+0.
    Type: Grant
    Filed: March 14, 2008
    Date of Patent: July 5, 2011
    Assignee: NEC Corporation
    Inventors: Naofumi Suzuki, Masayoshi Tsuji, Takayoshi Anan, Kenichiro Yashiki, Hiroshi Hatakeyama, Kimiyoshi Fukatsu, Takeshi Akagawa
  • Patent number: 7940828
    Abstract: An optical communication system for performing data transmission with optical signals comprises a first optical transmitter and a first optical receiver. The first optical transmitter has a first surface-emitting laser including an active layer of a multiple quantum well structure having a quantum well layer of InxGa1-xAs (0.15?x?0.35), the first surface-emitting laser having an oscillation wavelength ranging from 1000 nm to 1100 nm inclusive. The first optical transmitter transmits an optical signal generated by the first surface-emitting laser. The first optical receiver is connected to the first optical transmitter by a first optical transfer path, and receives the optical signal transmitted from the first optical transmitter through the first optical transfer path.
    Type: Grant
    Filed: December 27, 2006
    Date of Patent: May 10, 2011
    Assignee: NEC Corporation
    Inventors: Masayoshi Tsuji, Hiroshi Hatakeyama, Kimiyoshi Fukatsu, Takayoshi Anan, Naofumi Suzuki, Kenichiro Yashiki
  • Patent number: 7881358
    Abstract: A surface emitting laser is provided with a first multilayer Bragg reflecting mirror including a first layer, a second multilayer Bragg reflecting mirror including a second layer, and an optical resonator unit that is held between these multilayer Bragg reflecting mirrors and includes an active layer. Further, the optical resonator unit contacts with the first layer and second layer respectively. The effective refraction index neff of the resonator unit is larger than either the first layer or the second layer, and an optical length neffL of the optical resonator unit has a relationship with an oscillating wavelength ? of the surface emitting laser to satisfy the following relationship: 0.5?<neffL?0.7?.
    Type: Grant
    Filed: December 18, 2007
    Date of Patent: February 1, 2011
    Assignee: NEC Corporation
    Inventors: Takayoshi Anan, Naofumi Suzuki, Kenichiro Yashiki, Masayoshi Tsuji, Hiroshi Hatakeyama, Kimiyoshi Fukatsu, Takeshi Akagawa
  • Publication number: 20100034233
    Abstract: The present invention provides a surface-emission type semiconductor laser wherein an effective length of a cavity is reduced, thereby enabling to realize a higher-speed direct modulation. In the surface-emission type semiconductor laser according to the present invention, when supposing the optical path length (L) of a resonator part relative to a lasing wavelength ?0 to be given as 0.9×?0?L?1.1×?0, and denoting the refractive indexes of a high refractive index layer and a low refractive index layer of a dielectric DBR by nH1 and nL1; the average refractive index within an optical path length ?0/4 in the semiconductor in contact with the dielectric DBR by nS1; and the refractive indexes of the high refractive index layer and the low refractive index layer of a semiconductor DBR by nH2 and nL2, respective materials to be used are selected so as to satisfy the following conditions (1) and (2): nH1>f(nS1)nL12+g(nS1)nL1+h(nS1),??(1) where f(nS1)=0.0266 nS12?0.2407 nS1+0.6347; g(nS1)=?0.0508 nS12+0.
    Type: Application
    Filed: March 14, 2008
    Publication date: February 11, 2010
    Inventors: Naofumi Suzuki, Masayoshi Tsuji, Takayoshi Anan, Kenichiro Yashiki, Hiroshi Hatakeyama, Kimiyoshi Fukatsu, Takeshi Akagawa
  • Publication number: 20100020835
    Abstract: A surface emitting laser is provided with a first multilayer Bragg reflecting mirror including a first layer, a second multilayer Bragg reflecting mirror including a second layer, and an optical resonator unit that is held between these multilayer Bragg reflecting mirrors and includes an active layer. Further, the optical resonator unit contacts with the first layer and second layer respectively. The effective refraction index neff of the resonator unit is larger than either the first layer or the second layer, and an optical length neffL of the optical resonator unit has a relationship with an oscillating wavelength ? of the surface emitting laser to satisfy the following relationship: 0.5?<neffL?0.7?.
    Type: Application
    Filed: December 18, 2007
    Publication date: January 28, 2010
    Inventors: Takayoshi Anan, Naofumi Suzuki, Kenichiro Yashiki, Masayoshi Tsuji, Hiroshi Hatakeyama, Kimiyoshi Fukatsu, Takeshi Akagawa
  • Publication number: 20090080488
    Abstract: A surface emitting laser including a semiconductor substrate, a semiconductor substrate, a first reflector formed on the semiconductor substrate, an active layer formed on the first reflector, a tunnel junction layer formed above a part of the active layer, a semiconductor spacer layer which covers the tunnel junction layer, a second reflector formed on the semiconductor spacer layer in a region above the tunnel junction layer, a first electrode formed in the periphery of the second reflector on the semiconductor spacer layer, and a second electrode electrically connected to a layer lower than the active layer, wherein a layer thickness of the semiconductor spacer layer in the region directly above the tunnel junction layer is thinner than the layer thickness of the semiconductor spacer layer in the region directly below the first electrode.
    Type: Application
    Filed: September 24, 2008
    Publication date: March 26, 2009
    Applicant: NEC CORPORATION
    Inventors: Hiroshi HATAKEYAMA, Naofumi SUZUKI, Kenichiro YASHIKI, Takeshi AKAGAWA, Takayoshi ANAN, Masayoshi TSUJI, Kimiyoshi FUKATSU
  • Publication number: 20090028201
    Abstract: An optical communication system for performing data transmission with optical signals comprises a first optical transmitter and a first optical receiver. The first optical transmitter has a first surface-emitting laser including an active layer of a multiple quantum well structure having a quantum well layer of InxGa1-xAs (0.15?x?0.35), the first surface-emitting laser having an oscillation wavelength ranging from 1000 nm to 1100 nm inclusive. The first optical transmitter transmits an optical signal generated by the first surface-emitting laser. The first optical receiver is connected to the first optical transmitter by a first optical transfer path, and receives the optical signal transmitted from the first optical transmitter through the first optical transfer path.
    Type: Application
    Filed: December 27, 2006
    Publication date: January 29, 2009
    Applicant: NEC CORPORATION
    Inventors: Masayoshi Tsuji, Hiroshi Hatakeyama, Kimiyoshi Fukatsu, Takayoshi Anan, Naofumi Suzuki, Kenichiro Yashiki
  • Publication number: 20080317476
    Abstract: A vehicle-mounted optical communication system, which uses an optical signal to perform data transmission, comprises a first optical transmitter and an optical receiver. The first optical transmitter, which is mounted on a vehicle, has a multiple quantum well structure, in which an active layer has a quantum well layer of InxGa1-xAs (where 0.15?x?0.35), and includes a first surface emitting laser the oscillation wavelength of which is between 1000 nm and 1100 nm inclusive. The first optical transmitter transmits an optical signal generated by the first surface emitting laser. The optical receiver, which is mounted on the vehicle and connected to the first optical transmitter via a first optical transmission path, receives the optical signal, which was transmitted by the first optical transmitter, via the first optical transmission path.
    Type: Application
    Filed: December 28, 2006
    Publication date: December 25, 2008
    Applicant: NEC CORPORATION
    Inventors: Masayoshi Tsuji, Hiroshi Hatakeyama, Kimiyoshi Fukatsu, Takayoshi Anan, Naofumi Suzuki, Kenichiro Yashiki
  • Patent number: 6350998
    Abstract: In an avalanche photodiode having a separated electron injection type light absorbing layer/multiplication layer structure, the multiplication layer comprises In(1−x−y)AlxGayAs with the composition thereof being graded from InAlAs on the light absorbing layer side to InGaAs and preferably has a thickness of not more than 0.1 &mgr;m. By virtue of the above construction, very low noise characteristics and ultraspeed characteristics can be attained in photodetectors at 1 &mgr;m wavelength for long distance optional communications.
    Type: Grant
    Filed: June 18, 1999
    Date of Patent: February 26, 2002
    Assignee: NEC Corporation
    Inventor: Masayoshi Tsuji
  • Patent number: 6323507
    Abstract: A semiconductor photonic element is provided, which realize low threshold current and satisfactory characteristics in the high temperatures and/or high output operating condition.
    Type: Grant
    Filed: January 20, 2000
    Date of Patent: November 27, 2001
    Assignee: NEC Corporation
    Inventors: Yoshitaka Yokoyama, Koji Kudo, Masayoshi Tsuji
  • Patent number: 5801872
    Abstract: The invention provides a semiconductor optical modulation device which has low power dissipation, high extinction ratio and high speed response features. An n-type InP clad layer, an n.sup.- -type InAlAs-InAlGaAs composition inclination multiple layer, a p-type InP clad layer and a p.sup.+ -type InGaAs contact layer are layered on an n-type InP substrate. The layers are etched up to an intermediate location of the n-type clad layer to form a rib waveguide, and a positive electrode is formed on an upper portion of the rib waveguide. Further, a negative electrode is formed on the substrate.
    Type: Grant
    Filed: February 7, 1996
    Date of Patent: September 1, 1998
    Assignee: NEC Corporation
    Inventor: Masayoshi Tsuji
  • Patent number: 5539221
    Abstract: An avalanche photodiode is provided which consists of a staircase APD with a periodic multilayer structure graded in composition from InAlAs to InGa.sub.x Al.sub.(1-x) As (x>0.1) as the multiplication layer to improve the dark current characteristic. Another photodiode with separate photoabsorption and multiplication regions is provided with an electric-field relaxation layer whose bandgap is wider than that of the photoabsorption and has a triple structure with a highly-doped layer sandwiched between lightly-doped layers. This photodiode incorporates in detail on an n-type InP substrate, an avalanche multiplication layer 13 of a periodic multilayer structure graded in composition from n.sup.- -InAlAs to InGa.sub.x Al.sub.(1-x) As, a p.sup.- -InGaAs photoabsorption layer 17, and an InP electric-field relaxation triple layer 16 consisting of n.sup.-, p.sup.+, and p.sup.- layers between the avalanche multiplication layer 13 and the photoabsorption layer 17.
    Type: Grant
    Filed: April 7, 1994
    Date of Patent: July 23, 1996
    Assignee: NEC Corporation
    Inventors: Masayoshi Tsuji, Kikuo Makita
  • Patent number: 5471068
    Abstract: On a p-type InP substrate 12, there are provided a p-type InGaAs light absorptive layer 14 and an InAlAs/InGaAs superlattice avalanche multiplier layer 15. By selecting the composition of the well layer and the barrier layer of the avalanche multiplier layer 15, a strain is applied to at least one of them so that the difference .DELTA. Ec between the energies at the lower end of the conduction band of the well layer and/or the barrier layer is increased, or the difference .DELTA. Ev between the energies at the upper end of the valence band of the well layer and/or the barrier layer is decreased, and/or the effective mass of the hole within the well layer and/or barrier layer is decreased. Thus, the ionization factor ratio is further improved, or the pile-up of the hole is alleviated, or the traveling time of the hole is shortened to achieve an avalanche multiplier semiconductor photodetector having a wide bandwidth, low noise and high response characteristic.
    Type: Grant
    Filed: February 28, 1994
    Date of Patent: November 28, 1995
    Assignee: NEC Corporation
    Inventors: Masayoshi Tsuji, Kikuo Makita
  • Patent number: 5204539
    Abstract: An avalanche photodiode includes an avalanche multiplication layer of a hetero-periodical structure consisting of alternately provided barrier and well layers. Each barrier layer includes a multi-quantum barrier layer consisting of alternately provided short-width barrier and well layers. The barrier and well layers include respectively first and second III-group elements which meet the following conditions:E.sub.A <E.sub.B, and E.sub.A +E.sub.gA <E.sub.B +E.sub.gBorE.sub.A <E.sub.B, and E.sub.A +E.sub.gA >E.sub.B +E.sub.gBwhere E.sub.A and E.sub.B are average ionization energies of the first and second III-group elements respectively, and E.sub.gA and E.sub.gB are forbidden band gap energies, respectively.
    Type: Grant
    Filed: January 27, 1992
    Date of Patent: April 20, 1993
    Assignee: NEC Corporation
    Inventors: Masayoshi Tsuji, Kikuo Makita
  • Patent number: 5175286
    Abstract: A dibenz[b,e]oxepin derivative represented by the formula (I) ##STR1## wherein R.sup.1 and R.sup.2 are each hydrogen, halogen, lower alkyl or alkoxy; one of R.sup.3 and R.sup.4 is lower alkoxy, and other is a group represented by the formula (II) ##STR2## wherein R.sup.5 is hydrogen or lower alkyl, A is hydroxyl, --O(CH.sub.2).sub.m --R.sup.6 (wherein m is an integer of 1-6, R.sup.6 is hydrogen, lower alkyl or alkoxy, cycloamino, or lower alkoxycarbonyl), cycloamino, di-lower alkylamino or --NH(CH.sub.2).sub.n --R.sup.7 (wherein n is an integer of 0-3, R.sup.7 is hydrogen, hydroxyl, phenyl, thiazole or cycloamino).
    Type: Grant
    Filed: March 8, 1991
    Date of Patent: December 29, 1992
    Assignee: Hisamitsu Pharmaceutical Co., Inc.
    Inventors: Masaru Saita, Hisataka Inoue, Terumi Hachiya, Mikio Nakashima, Shigenori Yahiro, Yasuaki Taniguchi, Yoshiki Deguchi, Shoji Hamanaka, Masayoshi Tsuji, Kanji Noda
  • Patent number: 4895956
    Abstract: A novel 3-aroyl-6,7-dihydro-5H-pyrrolo[1,2-c]imidazole-7-carboxylic acid derivative which is useful as a medicine having excellent analgesic and anti-inflammatory actions with remarkably less toxicity and side-effects.
    Type: Grant
    Filed: September 8, 1988
    Date of Patent: January 23, 1990
    Assignee: Hisamitsu Pharmaceutical Co., Ltd.
    Inventors: Masayoshi Tsuji, Hisataka Inoue, Yoshihiro Tanoue, Kouichi Beppu, Masaru Saita, Yasuaki Taniguchi, Kenichi Furuta, Yoshiki Deguchi, Kanji Noda
  • Patent number: 4877876
    Abstract: This invention provides an indenothiazole derivative and a process for manufacturing the same. The said indenothiazole derivative is represented by the following formula: ##STR1## wherein X and Y are identical with, or different from, each other and are each a hydrogen atom, halogen atom, low alkyl group or low alkoxy group; n is an integer of from 0 to 4; R.sub.1 is a hydrogen atom, low alkyl group, unsubstituted or substituted phenyl group; R.sub.2 is a low alkyl group, cycloalkyl group, low alkoxyl group, unsubstituted or substituted phenoxy group, unsubstituted or substituted phenyl group, alkenyl group, heterocyclic group or cycloamino group; R.sub.3 is a hydrogen atom, low alkyl group or acyl group; and R.sub.2 and R.sub.3 may be combined to form a cycloamino group. Further, this invention also provides a tautomer of the compound represented by the above formula (Ia), wherein all the symbols are as defined above except that R.sub.3 is limited to a hydrogen atom.
    Type: Grant
    Filed: August 31, 1987
    Date of Patent: October 31, 1989
    Assignee: Hisamitsu Pharmaceutical Co., Inc.
    Inventors: Masayoshi Tsuji, Akira Nakagawa, Hisataka Inoue, Terumi Hachiya, Yoshihiro Tanoue, Kouichi Ikesue, Masaru Saita, Takenobu Mizoguchi, Testsuo Aoki, Hironobu Sato, Kanji Nodo
  • Patent number: 4455146
    Abstract: A novel plaster comprising a thermoplastic elastomer, an oil or higher fatty acid, a tack-providing resin and a medicinal ingredient. The plaster may be easily released therefrom without giving appreciable irritation or pain to the skin and body hairs of human bodies after applied thereto, while it may nevertheless exhibit satisfactory tackiness and adhesive strength when applied to human bodies.
    Type: Grant
    Filed: March 2, 1982
    Date of Patent: June 19, 1984
    Assignee: Hisamitsu Pharmaceutical Co., Ltd.
    Inventors: Kanji Noda, Akira Nakagawa, Tetsuya Yamagata, Masasi Kobayasi, Tadayoshi Suenaga, Fumiaki Tokubuchi, Kazuki Noguchi, Tadaaki Yoshitake, Masayoshi Tsuji, Hiroyuki Ide