Abstract: Disclosed is a solar cell for use in space, comprising compound semiconductors used as photovoltaic conversion material. The solar cell comprises a cover glass used for improving the radiation tolerance as a substrate for thin film deposition. The solar cell further comprises a crystalline thin film of the compound semiconductors directly formed on a surface of the cover glass for acting as the photovoltaic conversion material. The crystalline thin film of compound semiconductors is formed using a metal organic chemical vapor deposition system.

Abstract: Disclosed is a solar cell for use in space, comprising compound semiconductors used as photovoltaic conversion material. The solar cell comprises a cover glass used for improving the radiation tolerance as a substrare for thin film deposition. The solar cell further comprises a crystalline thin film of the compound semiconductors directly formed on a surface of the cover glass for acting as the photovoltaic conversion material. The crystalline thin film of compound semiconductors is formed using a metal organic chemical vapor deposition system.

Abstract: A process for forming GaAs on a silicon substrate with very low levels of unintended silicon doping. First, a dielectric layer of silicon dioxide, silicon nitride, or both is grown or deposited on the substrate. Next, a window is opened in the dielectric layer exposing the silicon substrate in the regions in which the GaAs is to be formed. The GaAs layer is then formed on the substrate using conventional techniques with the gas phase transfer of silicon contamination from the edges and back of the silicon substrate to the GaAs region inhibited by the dielectric layer or layers.

Abstract: A semiconductor wafer having an epitaxial GaAs layer, including a monocrystalline Si substrate having a major surface which is inclined at an off angle between 0.5.degree. and 5.degree. with respect to (100); and at least one intermediate layer epitaxially grown on the major surface of the monocrystalline Si substrate, as a buffer layer for accommodating a lattice mismatch between the Si substrate and the epitaxial GaAs layer which is epitaxially grown on a major surface of the top layer of the at least one intermediate layer. The at least one intermediate layer may comprise one or mor GaP/GaAsP, GaAsP/GaAs superlattice layers. the wafer may be used to produce a seimconductor light emitting element which has a plurality of crystalline gaAs layers including a light emitting layer epitaxially grown on the GaAs layer on the intermediate layer.

Abstract: A semiconductor wafer having an epitaxial GaAs layer, including a monocrystalline Si substrate having a major surface which is inclined at an off angle between 0.5.degree. and 5.degree. with respect to (100); and at least one intermediate layer epitaxially grown on the major surface of the monocrystalline Si substrate, as a buffer layer for accommodating a lattice mismatch between the Si substrate and the epitaxial GaAs layer which is epitaxially grown on a major surface of a top layer of the at least one intermediate layer. The at least one intermediate layer may comprise one or more GaP/GaAsP, GaAsP/GaAs superlattice layers. The wafer may be used to produce a semiconductor light emitting element which has a plurality of crystalline GaAs layers including a light emitting layer epitaxially grown on the GaAs layer on the intermediate layer.

Abstract: A GaAs growth crystal comprises a Si substrate, an intermediate layer formed on the substrate and a GaAs layer grown on the intermediate layer. The intermediate layer includes constituent GaP/GaAsP and GaAsP/GaAs superlattice layers and additionally AlP and AlGaP thin films.

Abstract: A micropump disposed within a human body for continuously delivering small quantities of a pharmaceutical liquid stored therein to be injected in a human body, wherein the delivery rate is controlled by the action of a pharmaceutical liquid injection control device in response to external electric signals.