Abstract: A semiconductor-processing apparatus includes: a wafer handling chamber; a wafer processing chamber; a wafer handling device; a first photosensor disposed in the wafer handling chamber in front of the wafer processing chamber at a position where the wafer partially blocks light received by the first photosensor at a ready-to-load position and substantially entirely blocks light received by the first photosensor when the wafer moves from the ready-to-load position toward the wafer processing chamber in the x-axis direction; and a second photosensor disposed in the wafer handling chamber in front of the wafer processing chamber at a position where the wafer does not block light received by the second photosensor at the ready-to-load position and partially blocks light received by the second photosensor when the wafer moves from the ready-to-load position toward the wafer processing chamber in the x-axis direction.

Abstract: A semiconductor-processing apparatus includes: a wafer handling chamber; a wafer processing chamber; a wafer handling device; a first photosensor disposed in the wafer handling chamber in front of the wafer processing chamber at a position where the wafer partially blocks light received by the first photosensor at a ready-to-load position and substantially entirely blocks light received by the first photosensor when the wafer moves from the ready-to-load position toward the wafer processing chamber in the x-axis direction; and a second photosensor disposed in the wafer handling chamber in front of the wafer processing chamber at a position where the wafer does not block light received by the second photosensor at the ready-to-load position and partially blocks light received by the second photosensor when the wafer moves from the ready-to-load position toward the wafer processing chamber in the x-axis direction.

Abstract: The optical apparatus of the present invention comprises; an optical member such as a lens; a casing containing the optical member; a gas supply device that supplies gas at a predetermined flow rate to inside the casing; and a gas introduction mechanism that reduces the flow rate of the gas supplied to inside the casing to below the predetermined flow rate. The casing has an inlet through which gas is supplied from the gas supply device to the inside. The gas introduction mechanism comprises an impingement member which is disposed between the inlet and a surface of the optical member, and the gas introduced from the inlet impinges against the impingement member. As a result, contamination of the optical member due to gas introduced to inside the casing can be reduced.

Abstract: A reticle (R) is irradiated with an ArF excimer laser beam to transfer a pattern on the reticle (R) onto a wafer (W) through a projection optical system (PL). Each of a plurality of illuminating lens units (2) arranged in the illuminating optical passage has a barrel containing a plurality of lenses, and caps are so provided as to be spaced from the lenses at both ends. Lens chambers among the lenses are filled with an inert gas, and the spaces between the caps and the lenses are also filled with an inert gas. When the illuminating lens unit (2) are housed in and illuminating optical path housing, the caps are removed while purging the spaces. Therefore, the lenses at both ends are prevented from being contaminated and the transmittance of the optical lens device for exposure with light having a wavelength of shorter than 300 nm is prevented from lowering.

Abstract: A reticle (R) is irradiated with an ArF excimer laser beam to transfer a pattern on the reticle (R) onto a wafer (W) through a projection optical system (PL). Each of a plurality of illuminating lens units (2) arranged in the illuminating optical passage has a barrel containing a plurality of lenses, and caps are so provided as to be spaced from the lenses at both ends. Lens chambers among the lenses are filled with an inert gas, and the spaces between the caps and the lenses are also filled with an inert gas. When the illuminating lens unit (2) are housed in and illuminating optical path housing, the caps are removed while purging the spaces. Therefore, the lenses at both ends are prevented from being contaminated and the transmittance of the optical lens device for exposure with light having a wavelength of shorter than 300 nm is prevented from lowering.

Abstract: A reticle (R) is irradiated with an ArF excimer laser beam to transfer a pattern on the reticle (R) onto a wafer (W) through a projection optical system (PL). Each of a plurality of illuminating lens units (2) arranged in the illuminating optical passage has a barrel containing a plurality of lenses, and caps are so provided as to be spaced from the lenses at both ends. Lens chambers among the lenses are filled with an inert gas, and the spaces between the caps and the lenses are also filled with an inert gas. When the illuminating lens unit (2) are housed in and illuminating optical path housing, the caps are removed while purging the spaces. Therefore, the lenses at both ends are prevented from being contaminated and the transmittance of the optical lens device for exposure with light having a wavelength of shorter than 300 nm is prevented from lowering.

Abstract: A reticle (R) is irradiated with an ArF excimer laser beam to transfer a pattern on the reticle (R) onto a wafer (W) through a projection optical system (PL). Each of a plurality of illuminating lens units (2) arranged in the illuminating optical passage has a barrel containing a plurality of lenses, and caps are so provided as to be spaced from the lenses at both ends. Lens chambers among the lenses are filled with an inert gas, and the spaces between the caps and the lenses are also filled with an inert gas. When the illuminating lens unit (2) are housed in and illuminating optical path housing, the caps are removed while purging the spaces. Therefore, the lenses at both ends are prevented from being contaminated and the transmittance of the optical lens device for exposure with light having a wavelength of shorter than 300 nm is prevented from lowering.

Abstract: An exposure method for irradiating a mask with an illuminating light and transferring a pattern on the mask onto a substrate through a projection optical system includes supplying a gas having a lower capability of absorbing illuminating light to each of plural chambers formed between optical elements disposed in a barrel, floating a contaminating substance on the plural elements in the gas by irradiation, exhausting the gas and contaminating substances from the barrel, supplying the plural chambers with further gas, after exhausting the gas containing the contaminating substance, and transferring the pattern onto the substrate.

Abstract: A pellicle pasting system and method pastes a pellicle on a mask. The system includes a washing apparatus to wash the mask; a first mask transport apparatus to transport the mask washed by the washing apparatus; a first inspection apparatus to inspect whether foreign objects are attached to the mask received from the first mask transport apparatus; a second mask transport apparatus to transport the mask when the first inspection apparatus determines that the foreign objects are substantially absent from the mask; and a pellicle pasting apparatus to paste the pellicle on the mask received from the second mask transport apparatus.

Abstract: Semiconductor wafer inspecting apparatus comprises plural supports each adapted to support a wafer to be inspected and a feeder for feeding a wafer to each of the plural supports. The apparatus can effect accurate and rapid positioning of the wafer.