Abstract: An array substrate includes plural scanning lines (111); a thin film transistor (112) having a first dielectric film (115), (117), a semiconductor film (120) thereon, and a source electrode (126b) electrically coupled to the semiconductor film (120) and a drain electrode (126a); a signal line (110) as taken out of the drain electrode (126a) to extend at substantially right angles to the scanning lines (111); and a pixel electrode (131) electrically connected to the source electrode (126b), wherein the pixel electrode (131) is electrically connected to the source electrode (126b) through a second dielectric film (127) as disposed on at least the signal line (110) while the pixel electrode (131) overlaps an elongate region (113) from its neighboring scanning line (111) through the first and second dielectric films (115), (117), (127).

Abstract: An array substrate includes plural scanning lines (111); a thin film transistor (112) having a first dielectric film (115), (117), a semiconductor film (120) thereon, and a source electrode (126b) electrically coupled to the semiconductor film (120) and a drain electrode (126a); a signal line (110) as taken out of the drain electrode (126a) to extend at substantially right angles to the scanning lines (111); and a pixel electrode (131) electrically connected to the source electrode (126b), wherein the pixel electrode (131) is electrically connected to the source electrode (126b) through a second dielectric film (127) as disposed on at least the signal line (110) while the pixel electrode (131) overlaps an elongate region (113) from its neighboring scanning line (111) through the first and second dielectric films (115), (117), (127).

Abstract: The present invention provides a display device substrate includes a first wiring layer formed on a substrate made of an insulating material, a second wiring layer formed to cross the first wiring layer, and an insulating film interposed between the first and second wiring layers at a cross point portion therebetween, wherein the first wiring layer is constituted by an electrode wiring layer made of a material containing aluminum as a main component and a surface covering layer formed by causing a refractory metal to denature the electrode wiring layer.

Abstract: An array substrate includes plural scanning lines (111); a thin film transistor (112) having a first dielectric film (115), (117), a semiconductor film (120) thereon, and a source electrode (126b) electrically coupled to the semiconductor film (120) and a drain electrode (126a); a signal line (110) as taken out of the drain electrode (126a) to extend at substantially right angles to the scanning lines (111); and a pixel electrode (131) electrically connected to the source electrode (126b), wherein the pixel electrode (131) is electrically connected to the source electrode (126b) through a second dielectric film (127) as disposed on at least the signal line (110) while the pixel electrode (131) overlaps an elongate region (113) from its neighboring scanning line (111) through the first and second dielectric films (115), (117), (127).

Abstract: An array substrate includes plural scanning lines (111); a thin film transistor (112) having a first dielectric film (115), (117), a semiconductor film (120) thereon, and a source electrode (126b) electrically coupled to the semiconductor film (120) and a drain electrode (126a); a signal line (110) as taken out of the drain electrode (126a) to extend at substantially right angles to the scanning lines (111); and a pixel electrode (131) electrically connected to the source electrode (126b), wherein the pixel electrode (131) is electrically connected to the source electrode (126b) through a second dielectric film (127) as disposed on at least the signal line (110) while the pixel electrode (131) overlaps an elongate region (113) from its neighboring scanning line (111) through the first and second dielectric films (115), (117), (127).

Abstract: A liquid crystal display device having an array substrate. The substrate has: (1) an insulating transparent substrate that has a pixel region and a non-pixel region, (2) a plurality of thin film transistors disposed in a matrix pattern on a display screen, each thin film transistor having a gate insulating film that is produced by an atmosphere pressure chemical vapor deposition; (3) a plurality of display pixel electrodes formed on the pixel region of the insulating transparent substrate, each display pixel electrode being connected to each of the thin film transistors; and (4) a protecting film formed on the non-pixel region of the insulating transparent substrate, the protecting film extends from the non-pixel region and overlaps a peripheral portion of each of the display pixel electrodes that are disposed in a portion of the display screen by a width of 2 .mu.m to 7 .mu.m. The display also has a counter substrate that is disposed apart from and facing the array substrate.

Abstract: There is provided a semiconductor device using a molybdenum-tantalum alloy having a tantalum composition ratio of 30 to 84 atomic percent. Using this Mo-Ta alloy, there is provided an electrode interconnection material comprising a multi-layered structure having an underlying metal film having a crystalline form of a body-centered cubic system and overlying a molybdenum-tantalum alloy film having a tantalum composition ratio of above 84 atomic percent.

Abstract: There is provided a semiconductor device using a molybdenum-tantalum alloy having a tantalum composition ratio of 30 to 84 atomic percent. Using this Mo-Ta alloy, there is provided an electrode interconnection material comprising a multi-layered structure having an underlying metal film having a crystalline form of a body-centered cubic system and overlying a molybdenum-tantalum alloy film having a tantalum composition ratio of above 84 atomic percent.

Abstract: There is provided a semiconductor device using a molybdenum-tantalum alloy having a tantalum composition ratio of 30 to 84 atomic percent. Using this Mo-Ta alloy, there is provided an electrode interconnection material comprising a multi-layered structure having an underlying metal film having a crystalline form of a body-centered cubic system and overlying a molybdenum-tantalum alloy film having a tantalum composition ratio of above 84 atomic percent.

Abstract: A thin-film transistor comprising a substrate, a gate electrode formed on said substrate and made of molybdenum-tantalum alloy containing 60 to 85 atomic % of tantalum gate insulation film formed on said gate electrode and made of a laminated layer including silicon nitride film and oxide film formed by oxidizing the surface of said gate electrode, semiconductor film formed on said gate insulation film and contacting the silicon nitride film, and source and drain electrodes formed on the semiconductor film.