Abstract: A flange portion is provided with two abutting protrusions, a spacer is formed with two abutting projections, the respective abutting protrusions and the abutting projections are formed on the outside of a tightening point tightened by a tightening member (a spacer fixing bolt and a spacer fixing nut) in the width direction orthogonal to an imaginary line connecting the tightening points of the flange portions on both sides, and a gap G is formed between the flange portion and the spacer at the tightening point (an opening limb portion of a spacer mounting hole and an insertion hole limb portion of a head insertion hole) before being tightened by the tightening member, while the flange portion and the spacer come into abutment with each other at the tightening point after having tightened in a state in which the abutting protrusions and the abutting protrusions come into abutment with each other.

Abstract: An exhaust gas purifying apparatus includes an exhaust gas treating body, a metal casing, and a holding sealing material. The exhaust gas treating body has a longitudinal direction and includes cell walls extending along the longitudinal direction to define cells between the cells. The metal casing has an inner surface and houses the exhaust gas treating body to face the inner surface. The holding sealing material is provided between the exhaust gas treating body and the inner surface of the metal casing to hold the exhaust gas treating body in the metal casing. The holding sealing material includes an inorganic fiber aggregated body. The metal casing has a corrosion area at least on a part of the inner surface. The corrosion area includes a corroded base material of the metal casing.

Abstract: A method of winding a holding sealing material includes providing a mat-shaped holding sealing material including inorganic fibers. An exhaust gas treating body is provided having cell walls extending along a longitudinal direction of the exhaust gas treating body to define cells. The mat-shaped holding sealing material is wound around an outer peripheral portion of the exhaust gas treating body to form multiple layers including a first layer and a second layer wound around the first layer. Each of the multiple layers is shifted along the longitudinal direction in a winding order such that the first layer is placed closer to one end face of the exhaust gas treating body than the second layer. A shift between the first layer and the second layer is from about 0.15% to about 15% of a length in a width direction of the holding sealing material.

Abstract: A holding sealing material includes mats which have a longitudinal direction and first and second longer side faces along the longitudinal direction and which include a lower mat and an upper mat laminated on the lower mat. A length of the lower mat in the longitudinal direction is longer than a length of the upper mat in the longitudinal direction. Each of the mats is connected to each other at a fixed portion which extends substantially along a width direction perpendicular to the longitudinal direction. The fixed portion has first and second end portions in the width direction. The first end portion is on a side of the first longer side face. The second end portion is on a side of the second longer side face. The first and second end portions are spaced apart from the first and second longer side face, respectively.

Abstract: A holding sealing material includes a plurality of mats. The plurality of mats have a longitudinal direction and include a lower mat and an upper mat laminated on the lower mat. Each of the plurality of mats includes inorganic fibers and has a substantially rectangular shape. A length of the lower mat in the longitudinal direction is longer than a length of the upper mat in the longitudinal direction. Each of the plurality of mats is connected to each other at at least two fixed portions. The at least two fixed portions are positioned at different positions in the longitudinal direction.

Abstract: The present invention relates to a holding and sealing material 2 set between a catalyst carrier 1 and a shell 95 which covering the outside of the catalyst carrier 1 in a catalytic converter for purifying an exhaust gas and manufacturing method thereof. An organic binder 22 on the holding and sealing material 2 has the glass transition point Tg (° c) of less than or equal to approximately 5° C. In addition, an infiltrating step and a drying step are conducted during the manufacturing. In the infiltrating step, the mat-like material is infiltrated with emulsion containing the organic binder. In the drying step, the mat-like material containing the emulsion is dried.

Abstract: A semiconductor device includes an active layer, an n-side contact layer, and a p-side contact layer. The nitride semiconductor device includes at least a first n-side layer, a second n-side layer, a third n-side layer and a fourth n-side layer formed in this order from the n-side contact layer between the n-side contact layer and the active layer, while at least the second n-side layer and the fourth n-side layer each contain an n-type impurity, and the concentration of the n-type impurity in at least the second n-side layer and the fourth n-side layer is higher than the concentration of the n-type impurity in the first n-side layer and the third n-side layer.

Abstract: The present invention relates to a holding and sealing material 2 set between a catalyst carrier 1 and a shell 95 which covering the outside of the catalyst carrier 1 in a catalytic converter for purifying an exhaust gas and manufacturing method thereof. An organic binder 22 on the holding and sealing material 2 has the glass transition point Tg (° C.) of less than or equal to approximately 5° C. In addition, an infiltrating step and a drying step are conducted during the manufacturing. In the infiltrating step, the mat-like material is infiltrated with emulsion containing the organic binder. In the drying step, the mat-like material containing the emulsion is dried.

Abstract: In light emitting devices of the prior art, there has been such cases that the device characteristics are insufficient, such as uneven forward voltage (Vf) within a wafer and variability of Vf with the lapse of driving time. The present invention is directed to a nitride semiconductor device comprising an active layer provided between an n-type contact layer that has an n electrode and a p-type contact layer that has a p electrode. The nitride semiconductor device comprises at least a first n-side layer, a second n-side layer, a third n-side layer and a fourth n-side layer formed in this order from the n-type contact layer between the n-type contact layer and the active layer, while at least the second n-side layer and the fourth n-side layer each have n-type impurity, and the concentration of the n-type impurity in at least the second n-side layer and the fourth n-side layer is higher than the concentration of the n-type impurity in the first n-side layer and the third n-side layer.

Abstract: The apparatus of this invention has an air pipe which continuously forms air bubbles of fixed size. These bubbles are caught by a screen in the form of a net and united to grow. Grown bubbles are suddenly spouted from the air spout holes of the screen and rise together with masses of water.