Abstract: An object mounting mechanism includes: a plate member on which an object is mounted. Bumps are arranged on an upper surface of the plate member which faces a reverse face of the object. In addition, the bumps are arranged sparsely in an area of a surrounding part of the plate member and densely toward an area of a center part of the plate member.

Abstract: A wafer surface inspection method and apparatus of high sensitivity, and free from performance degradation in terms of cleanliness, coordinate repeatability of foreign particles and the like. Gas for cooling is sprayed onto a laser irradiation position on the wafer surface to prevent an increase in temperature of the foreign particles and to suppress break-down of the foreign particles.

Abstract: Light from a light source becomes two illumination beams by a beam splitter. The beams are irradiated onto a semiconductor wafer from two mutually substantially orthogonal azimuthal angles having substantially equal elevation angles to form illumination spots. When the sum of scattered, diffracted, and reflected lights due to the illumination beams is detected, influence of the anisotropy which a contaminant particle and a defect existing in the wafer itself or thereon have with respect to an illumination direction, can be eliminated.

Abstract: A laser beam oscillated from a laser source is folded in its path by first and second plane mirrors and enters a beam expander. The surface of each plane mirror is deteriorated with illumination by the laser beam and the reflectance is reduced. To avoid a light quantity of the laser beam entering the beam expander from being reduced below a reference value, when the laser beam is illuminated over a certain time, a position on each of the first and second plane mirrors at which the laser beam is illuminated is changed by a structure for rotating and/or translating a reflecting surface of each plane mirror on a plane, which includes the plane mirror, while an optical axis is kept same. Thus, the useful life of each plane mirror can be prolonged without displacing the optical axis.

Abstract: The invention is directed to detect a warp amount in a real-time manner in a wafer rotating at high speed under inspection.

Abstract: A laser beam oscillated from a laser source is folded in its path by first and second plane mirrors and enters a beam expander. The surface of each plane mirror is deteriorated with illumination by the laser beam and the reflectance is reduced. To avoid a light quantity of the laser beam entering the beam expander from being reduced below a reference value, when the laser beam is illuminated over a certain time, a position on each of the first and second plane mirrors at which the laser beam is illuminated is changed by a structure for rotating and/or translating a reflecting surface of each plane mirror on a plane, which includes the plane mirror, while an optical axis is kept same. Thus, the useful life of each plane mirror can be prolonged without displacing the optical axis.

Abstract: Light from a light source becomes two illumination beams by a beam splitter. The beams are irradiated onto a semiconductor wafer from two mutually substantially orthogonal azimuthal angles having substantially equal elevation angles to form illumination spots. When the sum of scattered, diffracted, and reflected lights due to the illumination beams is detected, influence of the anisotropy which a contaminant particle and a defect existing in the wafer itself or thereon have with respect to an illumination direction, can be eliminated.

Abstract: Light from a light source becomes two illumination beams by a beam splitter. The beams are irradiated onto a semiconductor wafer from two mutually substantially orthogonal azimuthal angles having substantially equal elevation angles to form illumination spots. When the sum of scattered, diffracted, and reflected lights due to the illumination beams is detected, influence of the anisotropy which a contaminant particle and a defect existing in the wafer itself or thereon have with respect to an illumination direction, can be eliminated.

Abstract: Light from a light source becomes two illumination beams by a beam splitter. The beams are irradiated onto a semiconductor wafer from two mutually substantially orthogonal azimuthal angles having substantially equal elevation angles to form illumination spots. When the sum of scattered, diffracted, and reflected lights due to the illumination beams is detected, influence of the anisotropy which a contaminant particle and a defect existing in the wafer itself or thereon have with respect to an illumination direction, can be eliminated.

Abstract: Light from a light source becomes two illumination beams by a beam splitter. The beams are irradiated onto a semiconductor wafer from two mutually substantially orthogonal azimuthal angles having substantially equal elevation angles to form illumination spots. When the sum of scattered, diffracted, and reflected lights due to the illumination beams is detected, influence of the anisotropy which a contaminant particle and a defect existing in the wafer itself or thereon have with respect to an illumination direction, can be eliminated.

Abstract: The invention is directed to detect a warp amount in a real-time manner in a wafer rotating at high speed under inspection.

Abstract: A wafer surface inspection method and apparatus of high sensitivity, and free from performance degradation in terms of cleanliness, coordinate repeatability of foreign particles and the like. Gas for cooling is sprayed onto a laser irradiation position on the wafer surface to prevent an increase in temperature of the foreign particles and to suppress break-down of the foreign particles.

Abstract: A wafer surface inspection method and apparatus of high sensitivity, and free from performance degradation in terms of cleanliness, coordinate repeatability of foreign particles and the like. Gas for cooling is sprayed onto a laser irradiation position on the wafer surface to prevent an increase in temperature of the foreign particles and to suppress break-down of the foreign particles.

Abstract: A wafer surface inspection method and apparatus of high sensitivity, and free from performance degradation in terms of cleanliness, coordinate repeatability of foreign particles and the like. Gas for cooling is sprayed onto a laser irradiation position on the wafer surface to prevent an increase in temperature of the foreign particles and to suppress break-down of the foreign particles.

Abstract: In order to realize a surface inspection apparatus capable of inspecting a contaminant particle and a defect with a uniform sensitivity without depending on a rotation angle in a primary scan direction even in the case where intensity of scattered light, which is generated derived from the contaminant particle and the defect existing on the surface of a semiconductor wafer or adjacent to the surface, has anisotropy which depends on an illumination direction; light from a light source 11 becomes two illumination beams 21 and 22 by a beam splitter 12, the beams being irradiated onto a semiconductor wafer 100 from two mutually substantially orthogonal azimuthal angles having substantially equal elevation angles to form illumination spots 3 and 4.

Abstract: A laser beam oscillated from a laser source is folded in its path by first and second plane mirrors and enters a beam expander. The surface of each plane mirror is deteriorated with illumination by the laser beam and the reflectance is reduced. To avoid a light quantity of the laser beam entering the beam expander from being reduced below a reference value, when the laser beam is illuminated over a certain time, a position on each of the first and second plane mirrors at which the laser beam is illuminated is changed by a structure for rotating and/or translating a reflecting surface of each plane mirror on a plane, which includes the plane mirror, while an optical axis is kept same.

Abstract: A wafer surface inspection method and apparatus of high sensitivity, and free from performance degradation in terms of cleanliness, coordinate repeatability of foreign particles and the like. Gas for cooling is sprayed onto a laser irradiation position on the wafer surface to prevent an increase in temperature of the foreign particles and to suppress break-down of the foreign particles.