Abstract: A semiconductor device according to one or more embodiment may include: an IGBT region including a first semiconductor region of a first conductivity type; a second semiconductor region of a second conductivity type arranged on the first semiconductor region; a third semiconductor region of the first conductivity type arranged on the second semiconductor region; a fourth semiconductor region of the second conductivity type arranged on the first semiconductor region and opposite the second semiconductor region; and a control electrode that is arranged via an insulating film opposite the second semiconductor region; and a diode region comprising a fifth semiconductor region of the second conductivity type on the first semiconductor region. In the semiconductor device according to one or more embodiments, an impurity concentration of the fifth semiconductor region may be lower than the impurity concentration of the second semiconductor region.

Abstract: A semiconductor device includes: a main switching element, a current-sensing switching element and a surge protection element, which are formed on a single semiconductor substrate, wherein the surge protection element is a bidirectional diode connected between a first main electrode of the main switching element and a first main electrode of the current-sensing switching element. Also, a switching circuit includes the semiconductor device and a detection resistor connected to the first main electrode of the current-sensing switching element; and a driving device that drives the semiconductor device based on a voltage drop occurring in the detection resistor when the semiconductor device is turned on.

Abstract: A semiconductor device of the present invention includes: a main switching element, a current-sensing switching element and a surge protection element, which are formed on a single semiconductor substrate, wherein the surge protection element is a bidirectional diode connected between a first main electrode of the main switching element and a first main electrode of the current-sensing switching element. Also, a switching circuit of this disclosure includes above semiconductor device and a detection resistor connected to the first main electrode of the current-sensing switching element; and a driving device that drives the semiconductor device based on a voltage drop occurred in the detection resistor when the semiconductor device is turned on.

Abstract: To provide a composite semiconductor device capable of preventing malfunction of preventing electrical circuits and contributing to miniaturization of a power converter. A composite semiconductor device 10 has a structure in which a first power semiconductor element 13 that passes current from a second terminal C1 to a third terminal E1 according to a signal input from a first terminal G1 and a second power semiconductor element 16 that passes current from a second terminal C2 to a third terminal E2 according to a signal input from a first terminal G2 are formed in a single substrate (chip) 20. The third terminal E2 of the second power semiconductor element 16 is electrically connected to the first terminal G1 of the first power semiconductor element 13.

Abstract: Provided is a semiconductor device which can relax the electric field in the junction termination region, and can achieve a high breakdown voltage. The semiconductor device includes an element region (51) and a junction termination region (52). The element region includes: a first semiconductor region (2) of a first conductivity type; a second semiconductor region (4) of a second conductivity type; a third semiconductor region (10) of the first conductivity type; a trench (35) passing through the second semiconductor region and the third semiconductor region and has a bottom surface which reaches the first semiconductor region (2); a gate insulating film (12) formed on the side surface and a bottom surface of the trench; and a gate electrode (8) embedded in the trench.

Abstract: To provide a composite semiconductor device capable of preventing malfunction of preventing electrical circuits and contributing to miniaturization of a power converter. A composite semiconductor device 10 has a structure in which a first power semiconductor element 13 that passes current from a second terminal C1 to a third terminal E1 according to a signal input from a first terminal G1 and a second power semiconductor element 16 that passes current from a second terminal C2 to a third terminal E2 according to a signal input from a first terminal G2 are formed in a single substrate (chip) 20. The third terminal E2 of the second power semiconductor element 16 is electrically connected to the first terminal G1 of the first power semiconductor element 13.

Abstract: Provided is a semiconductor device which can relax the electric field in the junction termination region, and can achieve a high breakdown voltage. The semiconductor device includes an element region (51) and a junction termination region (52). The element region includes: a first semiconductor region (2) of a first conductivity type; a second semiconductor region (4) of a second conductivity type; a third semiconductor region (10) of the first conductivity type; a trench (35) passing through the second semiconductor region and the third semiconductor region and has a bottom surface which reaches the first semiconductor region (2); a gate insulating film (12) formed on the side surface and a bottom surface of the trench; and a gate electrode (8) embedded in the trench.

Abstract: A twin diode assembly is disclosed which has a pair of pn-junction diodes formed on a single semiconductor substrate to provide a common cathode. In order to reduce the flow of leakage current from one diode to the other through the common substrate, a semiconductor region of a specified conductivity type is formed in the substrate so as to provide a portion intervening between the pair of diodes. This intervening region efficiently collects the minority carriers diffusing from one diode toward the other when either of the two pn-junctions is forward biased.