Patents by Inventor Masayuki Hiranuma

Masayuki Hiranuma has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming conductive layers in the trenches or through holes made in an insulating film on a semiconductor substrate
    Publication number: 20040214428
    Abstract: Conductive layers are formed in the trenches made in an insulating film in the following manner. First, an amorphous silicon film 26A is deposited in the trenches 25 made in a silicon oxide film 24. A photoresist film 30 is then formed on the amorphous silicon film 26A by means of spin coating. Then, exposure light is applied to the entire surface of the photoresist film 30, thereby exposing to light those parts of the photoresist film 30 which lie outside the trenches 25. The other parts of the photoresist film 30, which lie in the trenches 25 are not exposed to light because the light reaching them is inadequate. Further, the photoresist film 30 is developed thereby removing those parts of the film 30 which lie outside the trenches 25 and which have been exposed to light. Thereafter, those parts of the amorphous silicon film 26A, which lie outside the trenches 25, are removed by means of dry etching using, as a mask, the unexposed parts of the photoresist film 30 which remain in the trenches 25.
    Type: Application
    Filed: May 17, 2004
    Publication date: October 28, 2004
    Applicants: Renesas Technology Corporation, Hitachi ULSI Systems Co., Ltd.
    Inventors: Ryouichi Furukawa, Kazuyuki Suko, Masayuki Hiranuma, Koichi Saitoh, Hirohiko Yamamoto, Tadanori Yoshida, Masayuki Ishizaka, Maki Shimoda
  • Method of forming a data-storing capacitive element made in an insulating film on a semiconductor substrate
    Patent number: 6770528
    Abstract: Conductive layers are formed in the trenches made in an insulating film in the following manner. First, an amorphous silicon film 26A is deposited in the trenches 25 made in a silicon oxide film 24. A photoresist film 30 is then formed on the amorphous silicon film 26A by means of spin coating. Then, exposure light is applied to the entire surface of the photoresist film 30, thereby exposing to light those parts of the photoresist film 30 which lie outside the trenches 25. The other parts of the photoresist film 30, which lie in the trenches 25 are not exposed to light because the light reaching them is inadequate. Further, the photoresist film 30 is developed thereby removing those parts of the film 30 which lie outside the trenches 25 and which have been exposed to light. Thereafter, those parts of the amorphous silicon film 26A, which lie outside the trenches 25, are removed by means of dry etching using, as a mask, the unexposed parts of the photoresist film 30 which remain in the trenches 25.
    Type: Grant
    Filed: February 19, 2003
    Date of Patent: August 3, 2004
    Assignees: Hitachi ULSI Systems Co., Ltd., Renesas Technology Corp.
    Inventors: Ryouichi Furukawa, Kazuyuki Suko, Masayuki Hiranuma, Koichi Saitoh, Hirohiko Yamamoto, Tadanori Yoshida, Masayuki Ishizaka, Maki Shimoda
  • Method of forming conductive layers in the trenches or through holes made in an insulating film on a semiconductor substrate
    Publication number: 20030148600
    Abstract: Conductive layers are formed in the trenches made in an insulating film in the following manner. First, an amorphous silicon film 26A is deposited in the trenches 25 made in a silicon oxide film 24. A photoresist film 30 is then formed on the amorphous silicon film 26A by means of spin coating. Then, exposure light is applied to the entire surface of the photoresist film 30, thereby exposing to light those parts of the photoresist film 30 which lie outside the trenches 25. The other parts of the photoresist film 30, which lie in the trenches 25 are not exposed to light because the light reaching them is inadequate. Further, the photoresist film 30 is developed thereby removing those parts of the film 30 which lie outside the trenches 25 and which have been exposed to light. Thereafter, those parts of the amorphous silicon film 26A, which lie outside the trenches 25, are removed by means of dry etching using, as a mask, the unexposed parts of the photoresist film 30 which remain in the trenches 25.
    Type: Application
    Filed: February 19, 2003
    Publication date: August 7, 2003
    Applicant: Hitachi, Ltd.
    Inventors: Ryouichi Furukawa, Kazuyuki Suko, Masayuki Hiranuma, Koichi Saitoh, Hirohiko Yamamoto, Tadanori Yoshida, Masayuki Ishizaka, Maki Shimoda
  • Method of forming conductive layers in the trenches or through holes made in an insulating film on a semiconductors substrate
    Patent number: 6444405
    Abstract: Conductive layers are formed in the trenches made in an insulating film in the following manner. First, an amorphous silicon film 26A is deposited in the trenches 25 made in a silicon oxide film 24. A photoresist film 30 is then formed on the amorphous silicon film 26A by means of spin coating. Then, exposure light is applied to the entire surface of the photoresist film 30, thereby exposing to light those parts of the photoresist film 30 which lie outside the trenches 25. The other parts of the photoresist film 30, which lie in the trenches 25 are not exposed to light because the light reaching them is inadequate. Further, the photoresist film 30 is developed thereby removing those parts of the film 30 which lie outside the trenches 25 and which have been exposed to light. Thereafter, those parts of the amorphous silicon film 26A, which lie outside the trenches 25, are removed by means of dry etching using, as a mask, the unexposed parts of the photoresist film 30 which remain in the trenches 25.
    Type: Grant
    Filed: June 30, 2000
    Date of Patent: September 3, 2002
    Assignees: Hitachi, Ltd., Hitachi Ulsi Systems Co., LTD
    Inventors: Ryouichi Furukawa, Kazuyuki Suko, Masayuki Hiranuma, Koichi Saitoh, Hirohiko Yamamoto, Tadanori Yoshida, Masayuki Ishizaka, Maki Shimoda
  • Method of forming conductive layers in the trenches or through holes made in an insulating film on a semiconductor substrate
    Publication number: 20020098678
    Abstract: Conductive layers are formed in the trenches made in an insulating film in the following manner. First, an amorphous silicon film 26A is deposited in the trenches 25 made in a silicon oxide film 24. A photoresist film 30 is then formed on the amorphous silicon film 26A by means of spin coating. Then, exposure light is applied to the entire surface of the photoresist film 30, thereby exposing to light those parts of the photoresist film 30 which lie outside the trenches 25. The other parts of the photoresist film 30, which lie in the trenches 25 are not exposed to light because the light reaching them is inadequate. Further, the photoresist film 30 is developed thereby removing those parts of the film 30 which lie outside the trenches 25 and which have been exposed to light. Thereafter, those parts of the amorphous silicon film 26A, which lie outside the trenches 25, are removed by means of dry etching using, as a mask, the unexposed parts of the photoresist film 30 which remain in the trenches 25.
    Type: Application
    Filed: April 2, 2002
    Publication date: July 25, 2002
    Applicant: Hitachi, Ltd.
    Inventors: Ryouichi Furukawa, Kazuyuki Suko, Masayuki Hiranuma, Koichi Saitoh, Hirohiko Yamamoto, Tadanori Yoshida, Masayuki Ishizaka, Maki Shimoda