Patents by Inventor Masayuki Ishizaka
Masayuki Ishizaka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7649290Abstract: Provided is a bearing bush enabling excellent advancing and retreating movements of a shaft member by eliminating a clearance between the bearing bush and the shaft member to eliminate a backlash therebetween, capable of reducing a load of dimension control on both the bearing bush and the shaft member, and capable of being manufactured at a low cost. The bearing bush (4) for supporting the reciprocating movement of the shaft member (1) in an axial direction has a receiving hole through which the shaft member (1) is passed. Grooves (40) are sequentially formed at predetermined intervals in an inner peripheral surface of the bearing bush (4) facing the receiving hole. An inner diameter of the receiving hole is formed to be equal to or smaller than an outer diameter of the shaft member (1), and the bearing bush is press-fitted to an outer peripheral surface of the shaft member (1) in a state of a so-called interference fit.Type: GrantFiled: April 20, 2005Date of Patent: January 19, 2010Assignee: THK Co., Ltd.Inventors: Hidekazu Michioka, Katsuya Iida, Takashi Matsumoto, Masayuki Ishizaka
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Publication number: 20080159667Abstract: Provided is a bearing bush enabling excellent advancing and retreating movements of a shaft member by eliminating a clearance between the bearing bush and the shaft member to eliminate a backlash therebetween, capable of reducing a load of dimension control on both the bearing bush and the shaft member, and capable of being manufactured at a low cost. The bearing bush (4) for supporting the reciprocating movement of the shaft member (1) in an axial direction has a receiving hole through which the shaft member (1) is passed. Grooves (40) are sequentially formed at predetermined intervals in an inner peripheral surface of the bearing bush (4) facing the receiving hole. An inner diameter of the receiving hole is formed to be equal to or smaller than an outer diameter of the shaft member (1), and the bearing bush is press-fitted to an outer peripheral surface of the shaft member (1) in a state of a so-called interference fit.Type: ApplicationFiled: April 20, 2005Publication date: July 3, 2008Applicant: THK CO., LTD.Inventors: Hidekazu Michioka, Katsuya Iida, Takashi Matsumoto, Masayuki Ishizaka
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Publication number: 20040214428Abstract: Conductive layers are formed in the trenches made in an insulating film in the following manner. First, an amorphous silicon film 26A is deposited in the trenches 25 made in a silicon oxide film 24. A photoresist film 30 is then formed on the amorphous silicon film 26A by means of spin coating. Then, exposure light is applied to the entire surface of the photoresist film 30, thereby exposing to light those parts of the photoresist film 30 which lie outside the trenches 25. The other parts of the photoresist film 30, which lie in the trenches 25 are not exposed to light because the light reaching them is inadequate. Further, the photoresist film 30 is developed thereby removing those parts of the film 30 which lie outside the trenches 25 and which have been exposed to light. Thereafter, those parts of the amorphous silicon film 26A, which lie outside the trenches 25, are removed by means of dry etching using, as a mask, the unexposed parts of the photoresist film 30 which remain in the trenches 25.Type: ApplicationFiled: May 17, 2004Publication date: October 28, 2004Applicants: Renesas Technology Corporation, Hitachi ULSI Systems Co., Ltd.Inventors: Ryouichi Furukawa, Kazuyuki Suko, Masayuki Hiranuma, Koichi Saitoh, Hirohiko Yamamoto, Tadanori Yoshida, Masayuki Ishizaka, Maki Shimoda
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Patent number: 6770528Abstract: Conductive layers are formed in the trenches made in an insulating film in the following manner. First, an amorphous silicon film 26A is deposited in the trenches 25 made in a silicon oxide film 24. A photoresist film 30 is then formed on the amorphous silicon film 26A by means of spin coating. Then, exposure light is applied to the entire surface of the photoresist film 30, thereby exposing to light those parts of the photoresist film 30 which lie outside the trenches 25. The other parts of the photoresist film 30, which lie in the trenches 25 are not exposed to light because the light reaching them is inadequate. Further, the photoresist film 30 is developed thereby removing those parts of the film 30 which lie outside the trenches 25 and which have been exposed to light. Thereafter, those parts of the amorphous silicon film 26A, which lie outside the trenches 25, are removed by means of dry etching using, as a mask, the unexposed parts of the photoresist film 30 which remain in the trenches 25.Type: GrantFiled: February 19, 2003Date of Patent: August 3, 2004Assignees: Hitachi ULSI Systems Co., Ltd., Renesas Technology Corp.Inventors: Ryouichi Furukawa, Kazuyuki Suko, Masayuki Hiranuma, Koichi Saitoh, Hirohiko Yamamoto, Tadanori Yoshida, Masayuki Ishizaka, Maki Shimoda
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Patent number: 6717202Abstract: A first silicon film is so formed as to extend along the inner surface of trenches 52 formed in a silicon oxide film 50, an oxide film is formed on the surface of the first silicon film, and a second amorphous silicon film is further deposited. Heat-treatment is applied to the surface of the second amorphous silicon film for seeding silicon nuclei and for promoting grain growth, and a granular silicon crystal 57 is grown from the second amorphous silicon film. In this way, the resistance of a lower electrode 59 of a capacitance device can be lowered.Type: GrantFiled: October 17, 2002Date of Patent: April 6, 2004Assignees: Renesas Technology Corp., Hitachi ULSI Systems Co., Ltd.Inventors: Yasuhiro Sugawara, Ryouichi Furukawa, Toshio Uemura, Akira Takamatsu, Hirohiko Yamamoto, Tadanori Yoshida, Masayuki Ishizaka, Shinpei Iljima, Yuzuru Ohji
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Publication number: 20030148600Abstract: Conductive layers are formed in the trenches made in an insulating film in the following manner. First, an amorphous silicon film 26A is deposited in the trenches 25 made in a silicon oxide film 24. A photoresist film 30 is then formed on the amorphous silicon film 26A by means of spin coating. Then, exposure light is applied to the entire surface of the photoresist film 30, thereby exposing to light those parts of the photoresist film 30 which lie outside the trenches 25. The other parts of the photoresist film 30, which lie in the trenches 25 are not exposed to light because the light reaching them is inadequate. Further, the photoresist film 30 is developed thereby removing those parts of the film 30 which lie outside the trenches 25 and which have been exposed to light. Thereafter, those parts of the amorphous silicon film 26A, which lie outside the trenches 25, are removed by means of dry etching using, as a mask, the unexposed parts of the photoresist film 30 which remain in the trenches 25.Type: ApplicationFiled: February 19, 2003Publication date: August 7, 2003Applicant: Hitachi, Ltd.Inventors: Ryouichi Furukawa, Kazuyuki Suko, Masayuki Hiranuma, Koichi Saitoh, Hirohiko Yamamoto, Tadanori Yoshida, Masayuki Ishizaka, Maki Shimoda
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Publication number: 20030038325Abstract: A first silicon film is so formed as to extend along the inner surface of trenches 52 formed in a silicon oxide film 50, an oxide film is formed on the surface of the first silicon film, and a second amorphous silicon film is further deposited. Heat-treatment is applied to the surface of the second amorphous silicon film for seeding silicon nuclei and for promoting grain growth, and a granular silicon crystal 57 is grown from the second amorphous silicon film. In this way, the resistance of a lower electrode 59 of a capacitance device can be lowered.Type: ApplicationFiled: October 17, 2002Publication date: February 27, 2003Inventors: Yasuhiro Sugawara, Ryouichi Furukawa, Toshio Uemura, Akira Takamatsu, Hirohiko Yamamoto, Tadanori Yoshida, Masayuki Ishizaka, Shinpei Iijima, Yuzuru Ohji
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Patent number: 6524927Abstract: A first silicon film is so formed as to extend along the inner surface of trenches 52 formed in a silicon oxide film 50, an oxide film is formed on the surface of the first silicon film, and a second amorphous silicon film is further deposited. Heat-treatment is applied to the surface of the second amorphous silicon film for seeding silicon nuclei and for promoting grain growth, and a granular silicon crystal 57 is grown from the second amorphous silicon film. In this way, the resistance of a lower electrode 59 of a capacitance device can be lowered.Type: GrantFiled: September 7, 1999Date of Patent: February 25, 2003Assignees: Hitachi, Ltd., Hitachi ULSI Systems Co., Ltd.Inventors: Yasuhiro Sugawara, Ryouichi Furukawa, Toshio Uemura, Akira Takamatsu, Hirohiko Yamamoto, Tadanori Yoshida, Masayuki Ishizaka, Shinpei Iljima, Yuzuru Ohji
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Patent number: 6444405Abstract: Conductive layers are formed in the trenches made in an insulating film in the following manner. First, an amorphous silicon film 26A is deposited in the trenches 25 made in a silicon oxide film 24. A photoresist film 30 is then formed on the amorphous silicon film 26A by means of spin coating. Then, exposure light is applied to the entire surface of the photoresist film 30, thereby exposing to light those parts of the photoresist film 30 which lie outside the trenches 25. The other parts of the photoresist film 30, which lie in the trenches 25 are not exposed to light because the light reaching them is inadequate. Further, the photoresist film 30 is developed thereby removing those parts of the film 30 which lie outside the trenches 25 and which have been exposed to light. Thereafter, those parts of the amorphous silicon film 26A, which lie outside the trenches 25, are removed by means of dry etching using, as a mask, the unexposed parts of the photoresist film 30 which remain in the trenches 25.Type: GrantFiled: June 30, 2000Date of Patent: September 3, 2002Assignees: Hitachi, Ltd., Hitachi Ulsi Systems Co., LTDInventors: Ryouichi Furukawa, Kazuyuki Suko, Masayuki Hiranuma, Koichi Saitoh, Hirohiko Yamamoto, Tadanori Yoshida, Masayuki Ishizaka, Maki Shimoda
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Publication number: 20020098678Abstract: Conductive layers are formed in the trenches made in an insulating film in the following manner. First, an amorphous silicon film 26A is deposited in the trenches 25 made in a silicon oxide film 24. A photoresist film 30 is then formed on the amorphous silicon film 26A by means of spin coating. Then, exposure light is applied to the entire surface of the photoresist film 30, thereby exposing to light those parts of the photoresist film 30 which lie outside the trenches 25. The other parts of the photoresist film 30, which lie in the trenches 25 are not exposed to light because the light reaching them is inadequate. Further, the photoresist film 30 is developed thereby removing those parts of the film 30 which lie outside the trenches 25 and which have been exposed to light. Thereafter, those parts of the amorphous silicon film 26A, which lie outside the trenches 25, are removed by means of dry etching using, as a mask, the unexposed parts of the photoresist film 30 which remain in the trenches 25.Type: ApplicationFiled: April 2, 2002Publication date: July 25, 2002Applicant: Hitachi, Ltd.Inventors: Ryouichi Furukawa, Kazuyuki Suko, Masayuki Hiranuma, Koichi Saitoh, Hirohiko Yamamoto, Tadanori Yoshida, Masayuki Ishizaka, Maki Shimoda