Patents by Inventor Masayuki Itose

Masayuki Itose has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Sintered material, and process for producing same
    Patent number: 9243318
    Abstract: A sintered body which includes at least indium oxide and gallium oxide and comprises voids each having a volume of 14000 ?m3 or more in an amount of 0.03 vol % or less.
    Type: Grant
    Filed: March 26, 2012
    Date of Patent: January 26, 2016
    Assignee: IDEMITSU KOSAN CO., LTD.
    Inventors: Shigekazu Tomai, Shigeo Matsuzaki, Koki Yano, Makoto Ando, Kazuaki Ebata, Masayuki Itose
  • InO—SnO—ZnO sputtering target
    Patent number: 9214519
    Abstract: A sputtering target including indium (In), tin (Sn) and zinc (Zn) and an oxide including one or more elements X selected from the following group X, the atomic ratio of the elements satisfying the following formulas (1) to (4): Group X: Mg, Si, Al, Sc, Ti, Y, Zr, Hf, Ta, La, Nd, Sm 0.10?In/(In+Sn+Zn)?0.85??(1) 0.01?Sn/(In+Sn+Zn)?0.40??(2) 0.10?Zn/(In+Sn+Zn)?0.70??(3) 0.70?In/(In+X)?0.99??(4).
    Type: Grant
    Filed: May 7, 2012
    Date of Patent: December 15, 2015
    Assignee: IDEMITSU KOSAN CO., LTD.
    Inventors: Masayuki Itose, Mami Nishimura, Misa Sunagawa, Masashi Kasami, Koki Yano
  • In—Ga—Zn oxide sputtering target and method for producing same
    Patent number: 9206502
    Abstract: A sputtering target including an oxide A and InGaZnO4, the oxide A having a diffraction peak in regions A to K at 2?=7.0° to 8.4°, 30.6° to 32.0°, 33.8° to 35.8°, 53.5° to 56.5°, 56.5° to 59.5°, 14.8° to 16.2°, 22.3° to 24.3°, 32.2° to 34.2°, 43.1° to 46.1°, 46.2° to 49.2°, and 62.7° to 66.7°.
    Type: Grant
    Filed: April 27, 2012
    Date of Patent: December 8, 2015
    Assignee: IDEMITSU KOSAN CO., LTD.
    Inventors: Misa Sunagawa, Masayuki Itose, Mami Nishimura, Masashi Kasami
  • Sputtering target comprising an oxide sintered body comprising In, Ga, and Zn
    Patent number: 9054196
    Abstract: A thin film transistor including an active layer, and has a field-effect mobility of 25 cm2/Vs or more, the active layer being formed of an oxide that includes In, Ga, and Zn in an atomic ratio that falls within the following region 1, region 2, or region 3, the region 1 being defined by 0.58?In/(In+Ga+Zn)?0.68 and 0.15<Ga/(In+Ga+Zn)?0.29, the region 2 being defined by 0.45?In/(In+Ga+Zn)<0.58 and 0.09?Ga/(In+Ga+Zn)<0.20, and the region 3 being defined by 0.45?In/(In+Ga+Zn)<0.58 and 0.20?Ga/(In+Ga+Zn)?0.27.
    Type: Grant
    Filed: May 1, 2012
    Date of Patent: June 9, 2015
    Assignee: IDEMITSU KOSAN CO., LTD.
    Inventors: Masayuki Itose, Mami Nishimura, Hirokazu Kawashima, Misa Sunagawa, Masashi Kasami, Koki Yano
  • In-Ga-Sn oxide sinter, target, oxide semiconductor film, and semiconductor element
    Patent number: 8999208
    Abstract: An oxide sintered body including indium element (In), gallium element (Ga) and tin element (Sn) in atomic ratios represented by the following formulas (1) to (3): 0.10?In/(In+Ga+Sn)?0.60??(1) 0.10?Ga/(In+Ga+Sn)?0.55??(2) 0.0001<Sn/(In+Ga+Sn)?0.60??(3).
    Type: Grant
    Filed: February 22, 2011
    Date of Patent: April 7, 2015
    Assignee: Idemitsu Kosan Co., Ltd.
    Inventors: Masayuki Itose, Mami Nishimura, Masashi Kasami, Koki Yano
  • In—Ga—Zn—O type sputtering target
    Patent number: 8858844
    Abstract: A sputtering target including an oxide sintered body which includes In, Ga and Zn and includes a structure having a larger In content than that in surrounding structures and a structure having larger Ga and Zn contents than those in surrounding structures.
    Type: Grant
    Filed: November 16, 2010
    Date of Patent: October 14, 2014
    Assignee: Idemitsu Kosan Co., Ltd.
    Inventors: Koki Yano, Masayuki Itose
  • In-Ga-Zn-type oxide, oxide sintered body, and sputtering target
    Patent number: 8784699
    Abstract: An oxide including indium (In), gallium (Ga) and zinc (Zn), wherein diffraction peaks are observed at positions corresponding to incident angles (2?) of 7.0° to 8.4°, 30.6° to 32.0°, 33.8° to 35.8°, 53.5° to 56.5° and 56.5° to 59.5° in an X-ray diffraction measurement (CuK? rays), and one of diffraction peaks observed at positions corresponding to incident angles (2?) of 30.6° to 32.0° and 33.8° to 35.8° is a main peak and the other is a sub peak.
    Type: Grant
    Filed: November 17, 2010
    Date of Patent: July 22, 2014
    Assignee: Idemitsu Kosan Co., Ltd.
    Inventors: Koki Yano, Masayuki Itose, Hirokazu Kawashima
  • IN-GA-ZN OXIDE SPUTTERING TARGET AND METHOD FOR PRODUCING SAME
    Publication number: 20140145124
    Abstract: A sputtering target including an oxide A and InGaZnO4, the oxide A having a diffraction peak in regions A to K at 2?=7.0° to 8.4°, 30.6° to 32.0°, 33.8° to 35.8°, 53.5° to 56.5°, 56.5° to 59.5°, 14.8° to 16.2°, 22.3° to 24.3°, 32.2° to 34.2°, 43.1° to 46.1°, 46.2° to 49.2°, and 62.7° to 66.7°.
    Type: Application
    Filed: April 27, 2012
    Publication date: May 29, 2014
    Inventors: Misa Sunagawa, Masayuki Itose, Mami Nishimura, Masashi Kasami
  • IN2O3-SNO2-ZNO SPUTTERING TARGET
    Publication number: 20140103268
    Abstract: A sputtering target including indium (In), tin (Sn) and zinc (Zn) and an oxide including one or more elements X selected from the following group X, the atomic ratio of the elements satisfying the following formulas (1) to (4): Group X: Mg, Si, Al, Sc, Ti, Y, Zr, Hf, Ta, La, Nd, Sm 0.10?In/(In+Sn+Zn)?0.85??(1) 0.01?Sn/(In+Sn+Zn)?0.40??(2) 0.10?Zn/(In+Sn+Zn)?0.70??(3) 0.70?In/(In+X)?0.
    Type: Application
    Filed: May 7, 2012
    Publication date: April 17, 2014
    Inventors: Masayuki Itose, Mami Nishimura, Misa Sunagawa, Masashi Kasami, Koki Yano
  • IN2O3-ZNO SPUTTERING TARGET
    Publication number: 20140102892
    Abstract: A sputtering target including indium (In) and zinc (Zn) and an oxide including one or more elements X selected from the following group X, the atomic ratio of the elements satisfying the following formulas (1) and (2): Group X: Mg, Si, Al, Sc, Ti, Y, Zr, Hf, Ta, La, Nd, Sm 0.30?In/(In+Zn)?0.90??(1) 0.70?In/(In+X)?0.99??(2).
    Type: Application
    Filed: May 8, 2012
    Publication date: April 17, 2014
    Applicant: Idemitsu Kosan Co., Ltd.
    Inventors: Masayuki Itose, Mami Nishimura, Misa Sunagawa, Masashi Kasami, Koki Yano
  • THIN-FILM TRANSISTOR
    Publication number: 20140084289
    Abstract: A thin film transistor including an active layer, and has a field-effect mobility of 25 cm2/Vs or more, the active layer being formed of an oxide that includes In, Ga, and Zn in an atomic ratio that falls within the following region 1, region 2, or region 3, the region 1 being defined by 0.58?In/(In+Ga+Zn)?0.68 and 0.15<Ga/(In+Ga+Zn)?0.29, the region 2 being defined by 0.45?In/(In+Ga+Zn)<0.58 and 0.09?Ga/(In+Ga+Zn)<0.20, and the region 3 being defined by 0.45?In/(In+Ga+Zn)<0.58 and 0.20?Ga/(In+Ga+Zn)?0.27.
    Type: Application
    Filed: May 1, 2012
    Publication date: March 27, 2014
    Inventors: Masayuki Itose, Mami Nishimura, Hirokazu Kawashima, Misa Sunagawa, Masashi Kasami, Koki Yano
  • In—Ga—Zn type oxide sputtering target
    Patent number: 8641930
    Abstract: A sputtering target including oxide A shown below and indium oxide (In2O3) having a bixbyite crystal structure: Oxide A: an oxide which includes an indium element (In), a gallium element (Ga) and a zinc element (Zn) in which diffraction peaks are observed at positions corresponding to incident angles (2?) of 7.0° to 8.4°, 30.6° to 32.0°, 33.8° to 35.8°, 53.5° to 56.5° and 56.5° to 59.5° in an X-ray diffraction measurement (CuK? rays).
    Type: Grant
    Filed: November 18, 2010
    Date of Patent: February 4, 2014
    Assignee: Idemitsu Kosan Co., Ltd.
    Inventors: Koki Yano, Masayuki Itose, Mami Nishimura
  • SINTERED MATERIAL, AND PROCESS FOR PRODUCING SAME
    Publication number: 20140014500
    Abstract: A sintered body which includes at least indium oxide and gallium oxide and comprises voids each having a volume of 14000 ?m3 or more in an amount of 0.03 vol % or less.
    Type: Application
    Filed: March 26, 2012
    Publication date: January 16, 2014
    Inventors: Shigekazu Tomai, Shigeo Matsuzaki, Koki Yano, Makoto Ando, Kazuaki Ebata, Masayuki Itose
  • Sputtering target and thin film transistor equipped with same
    Patent number: 8598578
    Abstract: A sintered body including an oxide that includes In, Ga and Zn at the following atomic ratio and includes a compound having as a main component a homologous crystal structure represented by InGaO3(ZnO): 0.28?Zn/(In+Zn+Ga)?0.38 0.18?Ga/(In+Zn+Ga)?0.28.
    Type: Grant
    Filed: November 18, 2010
    Date of Patent: December 3, 2013
    Assignee: Idemitsu Kosan Co., Ltd.
    Inventors: Koki Yano, Masayuki Itose
  • SEMICONDUCTOR THIN FILM, THIN FILM TRANSISTOR AND PRODUCTION METHOD THEREFOR
    Publication number: 20130264565
    Abstract: A semiconductor thin film includes one or more amorphous metal oxides, an OH group being bonded to at least some of the metal atoms of the amorphous metal oxides.
    Type: Application
    Filed: October 11, 2011
    Publication date: October 10, 2013
    Inventors: Mami Nishimura, Emi Kawashima, Masashi Kasami, Masahide Matsuura, Masayuki Itose
  • In-Ga-Sn OXIDE SINTER, TARGET, OXIDE SEMICONDUCTOR FILM, AND SEMICONDUCTOR ELEMENT
    Publication number: 20120313057
    Abstract: An oxide sintered body including indium element (In), gallium element (Ga) and tin element (Sn) in atomic ratios represented by the following formulas (1) to (3): 0.10?In/(In+Ga+Sn)?0.60??(1) 0.10?Ga/(In+Ga+Sn)?0.55??(2) 0.0001<Sn/(In+Ga+Sn)?0.60??(3).
    Type: Application
    Filed: February 22, 2011
    Publication date: December 13, 2012
    Inventors: Masayuki Itose, Mami Nishimura, Masashi Kasami, Koki Yano
  • IN-GA-ZN-O-BASED OXIDE SINTERED BODY SPUTTERING TARGET WITH EXCELLENT STABILITY DURING LONG-TERM DEPOSITION
    Publication number: 20120228133
    Abstract: A sputtering target including an oxide sintered body including In, Zn and Ga, wherein a surface compound and an interior compound are essentially of the same crystal type(s).
    Type: Application
    Filed: November 18, 2010
    Publication date: September 13, 2012
    Applicant: IDEMITSU KOSAN CO., LTD.
    Inventors: Masayuki Itose, Koki Yano
  • SPUTTERING TARGET AND THIN FILM TRANSISTOR EQUIPPED WITH SAME
    Publication number: 20120228608
    Abstract: A sintered body including an oxide that includes In, Ga and Zn at the following atomic ratio and includes a compound having as a main component a homologous crystal structure represented by InGaO3(ZnO): 0.28?Zn/(In+Zn+Ga)?0.38 0.18?Ga/(In+Zn+Ga)?0.28.
    Type: Application
    Filed: November 18, 2010
    Publication date: September 13, 2012
    Inventors: Koki Yano, Masayuki Itose
  • IN-GA-ZN-TYPE OXIDE, OXIDE SINTERED BODY, AND SPUTTERING TARGET
    Publication number: 20120216710
    Abstract: An oxide including indium (In), gallium (Ga) and zinc (Zn), wherein diffraction peaks are observed at positions corresponding to incident angles (2?) of 7.0° to 8.4°, 30.6° to 32.0°, 33.8° to 35.8°, 53.5° to 56.5° and 56.5° to 59.5° in an X-ray diffraction measurement (CuK? rays), and one of diffraction peaks observed at positions corresponding to incident angles (2?) of 30.6° to 32.0° and 33.8° to 35.8° is a main peak and the other is a sub peak.
    Type: Application
    Filed: November 17, 2010
    Publication date: August 30, 2012
    Applicant: IDEMITSU KOSAN CO., LTD.
    Inventors: Koki Yano, Masayuki Itose, Hirokazu Kawashima
  • SINTERED In-Ga-Zn-O-TYPE OXIDE
    Publication number: 20120184066
    Abstract: An oxide sintered body including In (indium element), Ga (gallium element) and Zn (zinc element), having a total content of In, Ga and Zn relative to total elements except for an oxygen element of 95 at % or more, and including a compound having a bixbyite structure represented by In2O3 and a compound having a spinel structure represented by ZnGa2O4.
    Type: Application
    Filed: September 30, 2010
    Publication date: July 19, 2012
    Applicant: IDEMITSU KOSAN CO., LTD.
    Inventors: Koki Yano, Hirokazu Kawashima, Masayuki Itose, Kauzyoshi Inoue