Abstract: An optical module that is easy to manufacture and may arrange and position an optical element mounting substrate and a package with high precision is provided. A substrate side positioning groove portion is formed in an optical element mounting surface of the optical element mounting substrate on which an optical element is mounted, and a package side positioning groove portion is formed in the package on which the optical element mounting substrate is arranged. The optical element mounting substrate and the package are overlapped with each other with the substrate side positioning groove portion and the package side positioning groove portion facing each other. An optical fiber that is a positioning member is inserted between the positioning groove portions. Thus, the optical element mounting substrate and the package are positioned to each other. The respective positioning groove portions on the substrate side and on the package side may readily be formed with high precision.

Abstract: A receptacle module capable of suppressing deterioration of characteristics of optical signals transmitted in optical fiber cables even when an external force is applied in a direction orthogonal to a longitudinal direction in a state where an optical fiber connector is attached in a receptacle. The reception module is provided with a receptacle having a first sleeve for holding in a detachable manner an optical fiber connector provided at end of an optical fiber cable, a second sleeve, and a window communicating the first and second sleeves and with an optical module held and fixed in the second sleeve. A projection of the optical module passes over the window to be positioned in the first sleeve and moves a ferrule a bit to press a spring when the connector is inserted in the first sleeve. The ferrule is moved to the right against the pushing force of the spring 21a. The abutting force increases the connection load between the optical fiber cables.

Abstract: An optical module comprises a substrate (2), formed with wiring patterns for electrical signals and having a mounting surface (2b) mounted with one or more semiconductor optical elements (4), and a package (7, 8) in which the substrate (2) is located. The substrate (2) is formed with at least one first positioning section (2c), the package (7) is formed of a synthetic resin and includes a disposition section (7e) in which one or more optical waveguide components are opposed to the semiconductor optical elements (4), and a second positioning section (7g) adapted to engage the first positioning section, thereby positioning the semiconductor optical elements and the disposition section.

Abstract: An optical module with which an optical connector is to be brought into abutment and connection by inserting guide pins into pin holes of the optical connector and then into pin holes of the optical module to thereby cause connection between the optical connector and the optical module. Retaining members for retaining the state of abutment and connection between the optical module and the optical connector are integrally mounted on the optical module or mounting portions on which the retaining members are removably mounted are integrally provided on the optical module.

Abstract: A semiconductor laser array has an array of a plurality of laser active sections mounted on a submount, with a common p-side electrode sandwiched therebetween. The laser active sections formed on a semiconductor substrate and separated from each other by separation channels are bonded onto the common p-side electrode in a junction-down fashion wherein the top layer of the laser active sections are bonded to the common p-side electrode. The semiconductor substrate are polished at the back surface for separation of the laser active sections from each other, followed by forming an n-side electrode for each of the laser active sections. The semiconductor laser array can be formed in a uniform thickness and can be driven by N-P-N transistor at a high speed.

Abstract: An ink jet printing head includes: a plurality of piezoelectric actuators arranged in rows on a substrate, each row including first piezoelectric elements and second piezoelectric elements which are alternately arrayed along the row, the first piezoelectric elements being actuatable to apply a compressive force to ink in accordance with print signals, the second piezoelectric elements being fixed and not actuated; and an ink chamber unit which includes ink chambers located above the first piezoelectric elements and containing ink.

Abstract: This invention provides a semiconductor laser device that can be accurately and easily coupled with a optical waveguide device, a method of manufacturing such a semiconductor laser device and a method of coupling such a semiconductor laser device and a optical waveguide device. A semiconductor laser device according to the invention is provided with a stripe-shaped groove that is referred to for accurately locating its light-emitting section. A method of manufacturing a semiconductor laser device according to the invention comprises steps of forming a stripe-shaped light-emitting section, a stripe-shaped nonlight-emitting section and a stripe-shaped reference groove on a semiconductor substrate. With a method of coupling a semiconductor laser device and an optical waveguide device according to the invention, the light-emitting section of the semiconductor laser device is aligned with the optical waveguide device by referring to the stripe-shaped reference groove.

Abstract: A semiconductor laser device comprising a semiconductor substrate, a multi-layered double heterostructure having active layers, a pair of cladding layers, a ridged waveguide structure and a current confining structure formed between the semiconductor substrate and the active layer. With such an arrangement, injected current is narrowed not only on the side above the ridge of the active layer but also on the substrate side of the active layer to improve the threshold current and its current confinement performance. When the two lateral trenches of the ridge are embedded with resin layers, the ridge stripe width can be made narrow to improve the threshold current of the device. When the active layer is realized in a DCC structure having two active layers and having an intermediary clad layer sandwiched therebetween, the device will show a low threshold current circular beam divergence and stabilized thermal characteristics.

Abstract: There is provided a semiconductor device comprising a current confinement structure capable of reducing leakage currents. The semiconductor device comprising a current confinement structure and a multiquantum barrier structure 10 disposed in said current confinement structure and having an effect of reflecting incident carriers as waves in phase conditions capable of allowing mutual enhancement of the incident and reflected waves.

Abstract: A semiconductor laser device comprises a III-V group p-type compound semiconductor substrate, a mesa-shaped narrow and straight multilayer double heterostructure having an active layer therein and blocking layers formed on the lateral sides of said double heterostructure in a pnp layer arrangement, and the n-type layer of said blocking layers is kept away from the lateral sides of the double heterostructure having an active layer.

Abstract: A laser diode array device (1, 11) according to a first aspect of the invention comprises a plurality of laser diode elements, some of which are formed as monitor laser diode elements for controlling the optical output of the remaining laser diode elements so that the device can operate at a power consumption rate by far lower than that of a conventional laser diode array device where the component laser diode elements needs to be individually controlled, while it can be assembled to an enhanced density. A laser diode array device (21) according to a second aspect of the invention comprises laser diode elements for signal transmission and monitor laser diode elements realized in the form of resonant cavities having a same length and sharing a common reflecting surface of a high-reflection film disposed at an end thereof so that the laser diode elements for signal transmission and the monitor laser diode elements show substantially identical light emitting characteristics.

Abstract: A semiconductor laser device comprising a semiconductor substrate, a multi-layered double heterostructure having active layers, a pair of cladding layers, a ridged waveguide structure and a current confining structure formed between the semiconductor substrate and the active layer. With such an arrangement, injected current is narrowed not only on the side above the ridge of the active layer but also on the substrate side of the active layer to improve the threshold current and its current confinement performance. When the two lateral trenches of the ridge are embedded with resin layers, the ridge stripe width can be made narrow to improve the threshold current of the device. When the active layer is realized in a DCC structure having two active layers and having an intermediary clad layer sandwiched therebetween, the device will show a low threshold current circular beam divergence and stabilized thermal characteristics.

Abstract: The quantum barrier semiconductor optical devices according to this invention are characterized by strained layer super lattice multiple quantum barriers provided between active layer and p-clad layer or within p-clad layer to obtain resonance scattering of incident overflowing electrons, that is to realize phase condition in which the incident overflowing electron wave and reflected electron wave enhance each other, in the double heterostructure where active layer having at least one GaInAs(P) layer is sandwiched between n-clad layer and p-clad layer. In this case, the active layer should desirably have quantum well structure.

Abstract: A semiconductor optical device comprising a mesa shaped double heterostructure having an active layer on an InP substrate, and pn junction current blocking layers embedded at all sides of the said double heterostructure, wherein at least portion of said current blocking layers consists of a semiconductor layer lattice-matched to InP and having a band gap larger than that of the InP at a room temperature. Therefore, the current blocking characteristics of the current blocking layer is improved so that the increase of leakage current under operating condition of high temperature and high output power is well suppressed, and the nonlinearity in the optical output-current characteristic is drastically reduced even under such operating conditions.

Abstract: A semiconductor laser diode of pn double hetero junction type which comprises a first active layer formed on a substrate for imparting a main oscillation, a second active layer adjacent to the first active layer in such a manner that at least one of the first and second active layers is formed of a multi quantum well or single quantum well structure, an intermediate clay layer interposed between the first active layer and the second active layer for preventing duplication of wave function of confined electrons of the respective active layers, and a graded refractive index distribution region (GRIN-SCH structure layer) provided on at least one of under the first active layer and over second active layer to reduce the refractive index thereof remotely from the active layers.