Patents by Inventor Masayuki Kakegawa

Masayuki Kakegawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4832455
    Abstract: A liquid crystal apparatus in which an anisotropic conductive layer made of organic resin containing several electrically conductive particles having substantially identical particle sizes is disposed between lead electrodes of a liquid crystal device and the lead electrodes of a drive circuit board, thermocompression bonding being applied to make the electrically conductive particles in direct contact with both lead electrodes to allow both lead electrodes to be electrically connected with each other. Further, at least one of the lead electrodes of a common electrode in the liquid crystal device and of the circuit board corresponding to the common electrode includes a number of separated electrodes that are spaced apart, and the pitches and widths of the separated electrodes are in the range of .+-.30% around the average values for pitch and width for the separated electrodes.
    Type: Grant
    Filed: September 4, 1987
    Date of Patent: May 23, 1989
    Assignee: Kabushiki Kaisha Toshia
    Inventors: Shozo Takeno, Masayuki Kakegawa, Yoshimasa Adachi
  • Patent number: 4740824
    Abstract: In a solid-state image sensor, a semiconductor structure having storage sections and a transfer section is formed in a substrate and an insulating film is formed on the substrate. Charge transfer electrodes are buried in the insulating film above the transfer section and pixel electrodes are formed on the insulating film and are electrically connected to the storage sections through electrodes, respectively. A photoconductive film for converting to incident light rays to electrical charges is formed on the insulating film, a barrier layer is formed on the film and a transparent electrode is formed on the barrier layer. Electrodes and semiconductor layers are buried in the insulating film such that each of the semiconductor layers is partly contacted to the photoconductive film, thereby a diode structure is formed by the photoconductive film, the semiconductor layer and the pixel electrodes.
    Type: Grant
    Filed: July 17, 1986
    Date of Patent: April 26, 1988
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Kensaku Yano, Takao Kon, Masayuki Kakegawa
  • Patent number: 4688098
    Abstract: In a solid state image sensor, first electrodes corresponding to pixels are arranged in a predetermined interval on a CCD structure. The first electrodes are electrically connected to storage sections of the CCD structure and electrically insulated from a transferring section of the CCD structure. Second electrodes are arranged in a predetermined interval on a flat surface of an insulating layer formed on the first electrodes and are electrically connected to the first electrodes. A photoconductive film for converting incident light rays to charges is formed on the second electrodes. A third electrode is formed on the photoconductive film through a barrier layer. Fourth electrodes which are electrically connected to the photoconductive film and electrically insulated from the second electrodes are barried in the insulating layer. An external voltage is applied to the fourth electrode.
    Type: Grant
    Filed: December 24, 1985
    Date of Patent: August 18, 1987
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Takao Kon, Kensaku Yano, Masayuki Kakegawa, Hidenori Shibata