Abstract: First sidewalls are provided on side surfaces of a gate electrode and on regions of a semiconductor substrate which are located on lateral sides of the gate electrode, second sidewalls are provided on the first sidewalls and each second sidewall has a height and a width respectively smaller than a height and a width of the first sidewall, outer sidewalls are provided outside the second sidewalls to cover the second sidewalls, and source and drain regions are provided in regions located on lateral sides of the outer sidewalls. The second sidewalls have a composition containing an atom causing a defect level due to a collision ion being implanted, and the first sidewalls and the third sidewalls have compositions containing no atom causing the defect level.

Abstract: In a method of switching magnet flux distribution, a magnet is arranged on a rear side of a backing plate with respect to a target holding side thereof in a magnetron sputtering cathode, and placing an article that exhibits ferromagnetism at room temperature on the target holding side of the backing plate or removing the article therefrom so that the magnet flux distribution is switched between a balanced distribution of the magnetic flux and unbalanced distribution of the magnetic flux.

Abstract: In a method of switching magnet flux distribution, a magnet is arranged on a rear side of a backing plate with respect to a target holding side thereof in a magnetron sputtering cathode, and placing an article that exhibits ferromagnetism at room temperature on the target holding side of the backing plate or removing the article therefrom so that the magnet flux distribution is switched between a balanced distribution of the magnetic flux and unbalanced distribution of the magnetic flux.

Abstract: A semiconductor device includes a gate insulating film formed on a semiconductor region of a first conductivity type; a gate electrode formed on the gate insulating film; an offset spacer formed on a side surface of the gate electrode; an inner sidewall formed on the side surface of the gate electrode with the offset spacer interposed therebetween, and having an L-shaped cross section; and an insulating film formed to cover the gate electrode, the offset spacer, the inner sidewall, and a part of the semiconductor region located laterally outward from the inner sidewall. The offset spacer includes an inner offset spacer formed on the side surface of the gate electrode and an outer offset spacer formed to cover the side surface of the gate electrode and the inner offset spacer. The outer offset spacer is in contact with a top end and outer side surface of the inner offset spacer.

Abstract: The present invention discloses a production method of core-shell type highly liquid absorbent resin particles comprising: (1) a first step in which a particle core portion is formed by suspension polymerizing an aqueous solution (e) containing (meth)acrylic acid, a crosslinking agent (c) and an anionic surfactant (d) in a hydrophobic organic solvent (a) containing a nonionic surfactant (b), and (2) a second step in which a shell portion that covers the particle core portion is formed by suspension polymerizing an aqueous solution (g) containing a water-soluble vinyl polymer (f), having carboxyl groups and polymerizable unsaturated double bonds and having a number average molecular weight of 500 to 10000, in a suspension obtained in the first step.

Abstract: A sun shade device is positioned on an inner surface of a panorama roof panel. The sun shade device includes a sheet-shaped shade member that can be pulled out and retracted in back and forth directions of a vehicle, and a shade cover member that can cover the wound shade member. The shade cover member is made of an elongated rigid body and is laterally bridged in right and left directions of the vehicle along a winding axis of the shade member. The shade cover member is secured to a vehicle main body at both ends thereof.

Abstract: A semiconductor device includes a first MIS transistor of a non-salicide structure and a second MIS transistor of a salicide structure which are both formed on a substrate of silicon. The first MIS transistor includes a first gate electrode of silicon, first sidewalls, a first source and drain, and plasma reaction films grown in a plasma atmosphere to cover the top surfaces of the first gate electrode and first source and drain, wherein the plasma reaction film prevents silicide formation on the first MIS transistor.

Abstract: A semiconductor device includes a first MIS transistor of a non-salicide structure and a second MIS transistor of a salicide structure which are both formed on a substrate of silicon. The first MIS transistor includes a first gate electrode of silicon, first sidewalls, a first source and drain, and plasma reaction films grown in a plasma atmosphere to cover the top surfaces of the first gate electrode and first source and drain, wherein the plasma reaction film prevents silicide formation on the first MIS transistor.

Abstract: A semiconductor device includes a gate insulating film formed on a semiconductor region of a first conductivity type; a gate electrode formed on the gate insulating film; an offset spacer formed on a side surface of the gate electrode; an inner sidewall formed on the side surface of the gate electrode with the offset spacer interposed therebetween, and having an L-shaped cross section; and an insulating film formed to cover the gate electrode, the offset spacer, the inner sidewall, and a part of the semiconductor region located laterally outward from the inner sidewall. The offset spacer includes an inner offset spacer formed on the side surface of the gate electrode and an outer offset spacer formed to cover the side surface of the gate electrode and the inner offset spacer. The outer offset spacer is in contact with a top end and outer side surface of the inner offset spacer.

Abstract: A semiconductor integrated circuit device includes: a protected circuit protected against electro-static discharge applied from outside the device; an SCR protection circuit having an anode terminal connected to a power line, a cathode terminal connected to a ground line and a trigger terminal; and a trigger circuit connected to the trigger terminal and including an RC circuit connected between the power line and the ground line.

Abstract: The present invention discloses a production method of core-shell type highly liquid absorbent resin particles comprising: (1) a first step in which a particle core portion is formed by suspension polymerizing an aqueous solution (e) containing (meth)acrylic acid, a crosslinking agent (c) and an anionic surfactant (d) in a hydrophobic organic solvent (a) containing a nonionic surfactant (b), and (2) a second step in which a shell portion that covers the particle core portion is formed by suspension polymerizing an aqueous solution (g) containing a water-soluble vinyl polymer (f), having carboxyl groups and polymerizable unsaturated double bonds and having a number average molecular weight of 500 to 10000, in a suspension obtained in the first step.

Abstract: The first object of this invention is to provide a magnetron sputtering device in which switching the magnetic field arrangement from the balanced mode to the unbalanced one and vice versa can be easily achieved. The second object is to provide a dual magnetron sputtering device which allows one to rapidly form a film from an inorganic film formation material over a wide temperature range from a low to high temperature. Provided is a magnetron sputtering device in which a sputtering cathode is arranged to produce a balanced distribution of magnetic fluxes and in which an article that exhibits ferromagnetism at room temperature is removably placed close to the surface of the sputtering cathode for holding a material target such that conversion of the balanced magnetic field arrangement into the unbalanced one can be easily achieved by removing the ferromagnetic article.

Abstract: A semiconductor device includes a first MIS transistor of a non-salicide structure and a second MIS transistor of a salicide structure which are both formed on a substrate of silicon. The first MIS transistor includes a first gate electrode of silicon, first sidewalls, a first source and drain, and plasma reaction films grown in a plasma atmosphere to cover the top surfaces of the first gate electrode and first source and drain.

Abstract: A semiconductor integrated circuit device includes: a protected circuit protected against electro-static discharge applied from outside the device; an SCR protection circuit having an anode terminal connected to a power line, a cathode terminal connected to a ground line and a trigger terminal; and a trigger circuit connected to the trigger terminal and including an RC circuit connected between the power line and the ground line.

Abstract: A color wheel including a disk-shaped substrate made of a light-transmittable medium and a plurality of filters arranged on the substrate is fabricated. Each filter is capable of selectively transmitting rays of light having a desired wavelength. The method of fabricating the color wheel including the steps of forming at least one of a plurality of adjoining selective color-transmittable films as the filters each at a predetermined area on a front side of the disk-shaped substrate, and utilizing, as a mask for exposure from a back side of the disk-shaped substrate, a portion containing at least one of two borders with which each one of the plurality of adjoining selective color-transmittable films is defined.

Abstract: A method for simulating an electrostatic discharge protective circuit replaces an electrostatic discharge protective element having an insulated-gate field-effect transistor having a source and a drain with an equivalent circuit including the insulated-gate field-effect transistor, a bipolar transistor, a current source, a diode, and a substrate resistance. Then, the method applies a forward bias to the source or the drain to perform a first simulation with respect to the equivalent circuit and applies a reverse bias to the source or the drain to perform a second simulation with respect to the equivalent circuit. The diode is disposed to cause, when the forward bias is applied to the source or the drain, a forward diode current to flow to the source or the drain to which the forward bias has been applied.

Abstract: A color wheel including a disk-shaped substrate made of a light-transmittable medium and a plurality of filters arranged on the substrate is fabricated. Each filter is capable of selectively transmitting rays of light having a desired wavelength. The method of fabricating the color wheel including the steps of forming at least one of a plurality of adjoining selective color-transmittable films as the filters each at a predetermined area on a front side of the disk-shaped substrate, and utilizing, as a mask for exposure from a back side of the disk-shaped substrate, a portion containing at least one of two borders with which each one of the plurality of adjoining selective color-transmittable films is defined.

Abstract: A bipolar plate for a fuel cell includes a conductive material, a novolac type phenol resin or a phenol dicyclopentadiene resin, and a compound having at least two ethylenically unsaturated double bonds. The conductive material is dispersed in an addition cross-linking reaction cured composition formed by the reaction of the novolac type phenol resin or the phenol dicyclopentadiene resin with the compound having at least two ethylenically unsaturated double bonds. Also, a method for manufacturing a bipolar plate for a fuel cell is provided, including the steps of mixing a conductive material, a novolac type phenol resin or a phenol dicyclopentadiene resin, and a compound having at least two ethylenically unsaturated double bonds, and heating and forming a resulting mixture into the shape of a bipolar plate.

Abstract: A method for rapidly imparting hydrophobicity to an oxide solid surface, which comprises exerting a mechanical stimulation to a desired region of a hydrophilicity-imparted oxide solid surface, to change said region to be hydrophobic.

Abstract: A curing composition comprising (1) a fluorine-containing curing monomer containing a fluorinated alkyl group having not less than 6 carbon atoms, (2) a fluorine-containing curing monomer containing a fluorinated alkyl group having not more than 5 carbon atoms, and (3) a polyfunctional curing monomer, the weight ratio of said fluorine-containing curing monomer (1) to said fluorine-containing curing monomer (2) ranging from 75/25 to 99/1. The composition is coated on an optical fiber base and cured by active energy rays to provide a core/clad optical fiber excellent in transparency, mechanical strength, environmental resistance, and optical characteristics.