Patents by Inventor Masayuki Kanzaki

Masayuki Kanzaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6924485
    Abstract: An infrared ray detector includes an array of pixels each including a micro-bridge structure wherein a diaphragm is supported in spaced relationship with a substrate by a beam structure. Each pixel has a vacuum encapsulation structure supported in a base area wherein the beam structure is supported by the substrate. The vacuum encapsulation structure includes a window film encapsulating first and second vacuum spaces formed by removing first and second sacrificial films sandwiching therebetween the diaphragm.
    Type: Grant
    Filed: October 1, 2002
    Date of Patent: August 2, 2005
    Assignee: NEC Corporation
    Inventor: Masayuki Kanzaki
  • Publication number: 20030062480
    Abstract: An infrared ray detector includes an array of pixels each including a micro-bridge structure wherein a diaphragm is supported in spaced relationship with a substrate by a beam structure. Each pixel has a vacuum encapsulation structure supported in a base area wherein the beam structure is supported by the substrate. The vacuum encapsulation structure includes a window film encapsulating first and second vacuum spaces formed by removing first and second sacrificial films sandwiching therebetween the diaphragm.
    Type: Application
    Filed: October 1, 2002
    Publication date: April 3, 2003
    Applicant: NEC CORPORATION
    Inventor: Masayuki Kanzaki
  • Patent number: 5696377
    Abstract: A hybrid infrared ray detector includes a first semiconductor substrate which has a first thickness and a first elastic coefficient. A buffer layer is provided on the first semiconductor substrate which is made of a first compound semiconductor having a second elastic coefficient larger than the first elastic coefficient and which has a second thickness smaller than the first thickness. An epitaxial layer is provided on the buffer layer. The epitaxial layer is made of a second compound semiconductor having a third elastic coefficient smaller than the second elastic coefficient and larger than the first elastic coefficient and which has a third thickness which is almost the same as the second thickness. Two-dimensional arrays of photodiodes are provided on a surface of the epitaxial layer. First bumps are provided on the photodiodes. Second bumps are provided on the surface of the epitaxial layer. The second bumps are positioned outside the two-dimensional arrays of the photodiodes.
    Type: Grant
    Filed: April 15, 1996
    Date of Patent: December 9, 1997
    Assignee: NEC Corporation
    Inventor: Masayuki Kanzaki