Abstract: According to one embodiment, a pressure sensor includes a base, and a first sensor unit. The first sensor unit includes a first transducer thin film, a first strain sensing device and a second strain sensing device. The first strain sensing device includes a first magnetic layer, a second magnetic layer, and a first intermediate layer provided between the first and the second magnetic layers. The second strain sensing device is provided apart from the first strain sensing device on the first membrane surface and provided at a location different from a location of the barycenter, the second strain sensing device including a third magnetic layer, a fourth magnetic layer, and a second intermediate layer provided between the third and the fourth magnetic layers, the first and the second intermediate layers being nonmagnetic. The first and the second strain sensing devices, and the barycenter are in a straight line.

Abstract: According to one embodiment, a pressure sensor includes a base, and a first sensor unit. The first sensor unit includes a first transducer thin film, a first strain sensing device and a second strain sensing device. The first strain sensing device includes a first magnetic layer, a second magnetic layer, and a first intermediate layer provided between the first and the second magnetic layers. The second strain sensing device is provided apart from the first strain sensing device on the first membrane surface and provided at a location different from a location of the barycenter, the second strain sensing device including a third magnetic layer, a fourth magnetic layer, and a second intermediate layer provided between the third and the fourth magnetic layers, the first and the second intermediate layers being nonmagnetic. The first and the second strain sensing devices, and the barycenter are in a straight line.

Abstract: According to one embodiment, a pressure sensor includes a base, and a first sensor unit. The first sensor unit includes a first transducer thin film, a first strain sensing device and a second strain sensing device. The first strain sensing device includes a first magnetic layer, a second magnetic layer, and a first intermediate layer provided between the first and the second magnetic layers. The second strain sensing device is provided apart from the first strain sensing device on the first membrane surface and provided at a location different from a location of the barycenter, the second strain sensing device including a third magnetic layer, a fourth magnetic layer, and a second intermediate layer provided between the third and the fourth magnetic layers, the first and the second intermediate layers being nonmagnetic. The first and the second strain sensing devices, and the barycenter are in a straight line.

Abstract: According to one embodiment, a pressure sensor includes: a base body; a sensor section; and a processing circuit. The sensor section includes: a transducing thin film; a first strain sensing element; and a second strain sensing element. The transducing thin film has a film surface and is flexible. The processing circuit is configured to output as an output signal at least one of a first signal obtained from the first strain sensing element upon application of external pressure to the transducing thin film and a second signal obtained from the second strain sensing element upon application of the external pressure to the transducing thin film.

Abstract: According to one embodiment, a strain sensor includes: a base; a strain sensing element; a magnetic field sensing element; and a processing unit. The strain sensing element includes a first magnetic layer having a first magnetization; a second magnetic layer having a second magnetization; and a first intermediate layer. In the strain sensing element an angle between a direction of the first magnetization and a direction of the second magnetization changes in accordance with a strain. The magnetic field sensing element includes a third magnetic layer having a third magnetization; a fourth magnetic layer having a fourth magnetization; and a second intermediate layer. In the magnetic field sensing an angle between a direction of the third magnetization and a direction of the fourth magnetization changes in accordance with a magnetic field.

Abstract: According to one embodiment, a pressure sensor includes: a base body; a sensor section; and a processing circuit. The sensor section includes: a transducing thin film; a first strain sensing element; and a second strain sensing element. The transducing thin film has a film surface and is flexible. The processing circuit is configured to output as an output signal at least one of a first signal obtained from the first strain sensing element upon application of external pressure to the transducing thin film and a second signal obtained from the second strain sensing element upon application of the external pressure to the transducing thin film.

Abstract: According to one embodiment, a strain sensor includes a substrate, a lid, a frame, and a sensing unit. The substrate has a first surface. The lid is provided on the first surface. The frame is provided between the substrate and the lid. The frame is nonconductive and includes a magnetic body. The sensing unit is provided inside the frame between the substrate and the lid, and includes a magnetoresistance effect element.

Abstract: According to one embodiment, a strain sensor includes: a base; a strain sensing element; a magnetic field sensing element; and a processing unit. The strain sensing element includes a first magnetic layer having a first magnetization; a second magnetic layer having a second magnetization; and a first intermediate layer. In the strain sensing element an angle between a direction of the first magnetization and a direction of the second magnetization changes in accordance with a strain. The magnetic field sensing element includes a third magnetic layer having a third magnetization; a fourth magnetic layer having a fourth magnetization; and a second intermediate layer. In the magnetic field sensing an angle between a direction of the third magnetization and a direction of the fourth magnetization changes in accordance with a magnetic field.

Abstract: According to one embodiment, a strain sensor includes a substrate, a lid, a frame, and a sensing unit. The substrate has a first surface. The lid is provided on the first surface. The frame is provided between the substrate and the lid. The frame is nonconductive and includes a magnetic body. The sensing unit is provided inside the frame between the substrate and the lid, and includes a magnetoresistance effect element.

Abstract: According to one embodiment, a pressure sensor includes a base, and a first sensor unit. The first sensor unit includes a first transducer thin film, a first strain sensing device and a second strain sensing device. The first strain sensing device includes a first magnetic layer, a second magnetic layer, and a first intermediate layer provided between the first and the second magnetic layers. The second strain sensing device is provided apart from the first strain sensing device on the first membrane surface and provided at a location different from a location of the barycenter, the second strain sensing device including a third magnetic layer, a fourth magnetic layer, and a second intermediate layer provided between the third and the fourth magnetic layers, the first and the second intermediate layers being nonmagnetic. The first and the second strain sensing devices, and the barycenter are in a straight line.

Abstract: According to one embodiment, a pressure sensor includes a base, and a first sensor unit. The first sensor unit includes a first transducer thin film, a first strain sensing device and a second strain sensing device. The first strain sensing device includes a first magnetic layer, a second magnetic layer, and a first intermediate layer provided between the first and the second magnetic layers. The second strain sensing device is provided apart from the first strain sensing device on the first membrane surface and provided at a location different from a location of the barycenter, the second strain sensing device including a third magnetic layer, a fourth magnetic layer, and a second intermediate layer provided between the third and the fourth magnetic layers, the first and the second intermediate layers being nonmagnetic. The first and the second strain sensing devices, and the barycenter are in a straight line.

Abstract: According to one embodiment, a pressure sensor includes a base, and a first sensor unit. The first sensor unit includes a first transducer thin film, a first strain sensing device and a second strain sensing device. The first strain sensing device includes a first magnetic layer, a second magnetic layer, and a first intermediate layer provided between the first and the second magnetic layers. The second strain sensing device is provided apart from the first strain sensing device on the first membrane surface and provided at a location different from a location of the barycenter, the second strain sensing device including a third magnetic layer, a fourth magnetic layer, and a second intermediate layer provided between the third and the fourth magnetic layers, the first and the second intermediate layers being nonmagnetic. The first and the second strain sensing devices, and the barycenter are in a straight line.

Abstract: Balls to be moved radially outward by a centrifugal force are held in a clutch hub, and projections extending around the outer circumferences of the balls are united with a synchronizer ring. Those portions of the projections, which radially confront the balls, are formed with slopes for establishing an axial force to push the synchronizer ring away from the spline piece on the basis of the centrifugal force of the balls. Thus, the axial force for disengaging the synchronizer ring from a rotating member to be synchronized can be increased to prevent the chatter at a low number of revolution and to effectively eliminate the drag torque at a high number of revolution.

Abstract: An idler mass member is provided inside or outside a torque transmittance path including a clutch for connecting and disconnecting an engine side and a transmission side having a synchromesh. The idler mass member is detached from a power train when the clutch is disengaged and is brought into contact or engagement with a driven side of the power train when or before the clutch is moved to be engaged. Due to the idler mass member, a peak torque generated in the driven side at a rushed start of an automobile is decreased.