Abstract: A camera 10 has an imaging optical system, an imaging device 21a, and a finder device 15. The finder device 15 includes a variable magnification lens 64 which can be inserted into and removed from an optical path, and a shutter 62 which can switch between a closed state in which it interrupts light coming from a finder window 16 and an open state in which it allows passage of light coming from the finder window 16. The camera 10 is equipped with a driver 54 for controlling insertion and removal of the variable magnification lens 64 in accordance with the focal length of the imaging optical system, a driver 53 for controlling the state of the shutter 62, and a CPU 82. The CPU 82 controls the shutter 62 so that it is kept in the closed state while the variable magnification lens 64 is being moved.

Abstract: A camera 10 has an imaging optical system, an imaging device 21a, and a finder device 15. The finder device 15 includes a variable magnification lens 64 which can be inserted into and removed from an optical path, and a shutter 62 which can switch between a closed state in which it interrupts light coming from a finder window 16 and an open state in which it allows passage of light coming from the finder window 16. The camera 10 is equipped with a driver 54 for controlling insertion and removal of the variable magnification lens 64 in accordance with the focal length of the imaging optical system, a driver 53 for controlling the state of the shutter 62, and a CPU 82. The CPU 82 controls the shutter 62 so that it is kept in the closed state while the variable magnification lens 64 is being moved.

Abstract: An imaging device includes a CCD-type solid-state imaging element, an imaging control section, a fill light firing section, and a light firing amount calculation section. The CCD-type solid-state imaging element includes a first photoelectric conversion element and a second photoelectric conversion element adjacent to the first photoelectric conversion element. A charge is independently readable from the first photoelectric conversion element and the second photoelectric conversion element. The imaging control section, in response to one photographing command, executes imaging by the solid-state imaging element in two exposure time periods of a first exposure time period exposing the first photoelectric conversion element and a second exposure time period exposing the second photoelectric conversion element. The second exposure time period overlaps the first exposure time period and is shorter than the first exposure time period. The fill light firing section fires fill light.

Abstract: A pixel defect detection method for a solid-state image pickup device that comprises photoelectric conversion devices and a charge transfer path so as to extract signal charges accumulated on the photoelectric conversion devices to the charge transfer path, the method comprising: imaging, under illumination light of a first light amount, the solid-state image pickup device, to generate a set of first picked-up image signals corresponding to the photoelectric conversion devices and detect at least one first defective pixel where corresponding one of the first picked-up image signals is below a first level; and imaging, under illumination light of a second light amount smaller than the first light amount, the solid-state image pickup device, to generate a set of second picked-up image signals corresponding to the photoelectric conversion devices and detect at least one second defective pixel where corresponding one of the second picked-up image signals is below a second level.