Abstract: A solid state image sensor and an image sensing apparatus incorporated with the solid state image sensor include: pixel arrays each provided with pixels, and an accumulating section e.g. a capacitor CX which sums up and accumulates signal charges obtained by exposure of an object with respect to a corresponding color at different timings when the signal charges are obtained by the pixels of each of the pixel arrays. A reset noise of a converting floating diffusion is outputted after the converting floating diffusion is reset. Thereafter, a summation of the reset noise, and the signal charges accumulated in the accumulating section is outputted.

Abstract: In a solid-state image sensing device, a method for driving the solid-state image sensing device, and an image sensing system incorporated with the solid-state image sensing device of the invention, pixel signals having two or more different photoelectric conversion characteristics to be outputted from a pixel section are amplified by using an analog gain with respect to each of the photoelectric conversion characteristics for outputting the amplified pixel signals. This enables to reproduce an image having a wide dynamic range while suppressing lowering of the frame rate.

Abstract: A control part 2 controls a pixel circuit GC so that an exposure period TE for causing a photoelectric conversion element PD to accumulate signal charges, and a transfer period TT for transferring the signal charges accumulated in the exposure period TE to FD are repeated. Then, the control part 2 divides the exposure period TE into two periods of a first half period TF and a latter half period TB so as to apply a negative bias voltage to a gate of a transfer transistor TX in the first half period TF, and apply an intermediate potential VM for driving the pixel circuit GC with a linear log characteristic to the gate of the transfer transistor TX in the latter half period TB.

Abstract: Provided is a solid-state imaging device comprising a plurality of pixel circuits GC having photoelectric conversion characteristics including linear characteristics and logarithmic characteristics on either side of an inflection point. The pixel circuits GC each include a photoelectric conversion element PD which accumulates a signal charge by exposing a subject, and a floating diffusion FD which converts the signal charge accumulated by the photoelectric conversion element PD into a voltage signal. The floating diffusion FD is set to have an operating charge that is smaller than a saturation charge of the photoelectric conversion element PD.

Abstract: To provide an image pickup device and an image pickup apparatus which are equipped with a linear-log sensor which can cancel variations between pixels in an inflection point caused by variations in a threshold of the transistors constituting a logarithmic conversion circuit while using a circuit constitution similar to a pixel circuit of an image pickup device having only an ordinary linear characteristic. When the photoelectric charge accumulated in a photoelectric conversion element is removed, a charge removing transistor is controlled such that the potential of the channel of the charge removing transistor is set to be higher than the minimum potential of the photoelectric conversion element.

Abstract: A trace control unit 61 traces photoelectric conversion characteristics of dummy pixels G2 by varying a current value outputted from constant current sources Id. The constant current sources Id are provided common to respective rows in a dummy pixel section 12 and output a current value according to a setting signal outputted from the trace control unit 61. At this point, the trace control unit 61 instructs a vertical scan circuit 2 to turn off a switch ISW during a predetermined read period in which a read circuit 3 reads pixel signals from the dummy pixels G2.

Abstract: A column A/D converter includes two column A/D converting elements. Each of the column A/D converting elements is operable to divide a pixel signal read out from a pixel array into two blocks i.e. an upper block constituted of upper two bit data, and a lower block constituted of lower two bit data, and sequentially perform A/D conversion with respect to the blocks in the unit of one horizontal scanning period. A controller causes each of the column A/D converting elements to concurrently perform A/D conversion with respect to different blocks of pixel signals at different rows.

Abstract: An object of the present invention is to provide a solid-state image sensing device configured to change a bias voltage given to the photoelectric converting section at the time of resetting so that an operative condition of the photoelectric converting section after the resetting can be maintained a constant condition regardless of an amount of the incident light. To achieve the object, an MOS transistor T5 is provided. The drain of the MOS transistor T5 is connected with a gate and a drain of an MOS transistor T2 and the source of the MOS transistor T5configured to be applied a DC voltage VRS. Here, a signal ? V is given, an MOS transistor T4is turned on, and image data is output. A signal ? RS is given and the MOS transistor T5 is turned on. As a result, a gate voltage Vg of the MOS transistor T2 is maintained as a constant voltage value. Then, a reset operation for pixels is stared.

Abstract: A solid state image sensor and an image sensing apparatus incorporated with the solid state image sensor include: pixel arrays each provided with pixels, and an accumulating section e.g. a capacitor CX which sums up and accumulates signal charges obtained by exposure of an object with respect to a corresponding color at different timings when the signal charges are obtained by the pixels of each of the pixel arrays. A reset noise of a converting floating diffusion is outputted after the converting floating diffusion is reset. Thereafter, a summation of the reset noise, and the signal charges accumulated in the accumulating section is outputted.

Abstract: A level shifter (181) shifts a signal level of a noise signal produced from a pixel so that the signal level becomes close to a reference level, and then a level shifter (182) complements the noise signal whose level was shifted by the level shifter (181) by a signal level corresponding to the level shifted by the level shifter (181). After that, the differential amplifier (183) performs subtraction operation between the noise signal that has passed the level shifters (181, 182) and the image signal from the pixel, so as to output the image signal without noises.

Abstract: A column A/D converter includes two column A/D converting elements. Each of the column A/D converting elements is operable to divide a pixel signal read out from a pixel array into two blocks i.e. an upper block constituted of upper two bit data, and a lower block constituted of lower two bit data, and sequentially perform A/D conversion with respect to the blocks in the unit of one horizontal scanning period. A controller causes each of the column A/D converting elements to concurrently perform A/D conversion with respect to different blocks of pixel signals at different rows.

Abstract: A database obtained based on the photoelectric conversion characteristics for R and G signals and a database obtained based on the photoelectric conversion characteristics for G and B signals are stored in LUTs respectively. Signal value calculators read out the databases from the LUTs respectively and perform white balance processing on the R and B signals respectively.

Abstract: To provide an image pickup device and an image pickup apparatus which are equipped with a linear-log sensor which can cancel variations between pixels in an inflection point caused by variations in a threshold of the transistors constituting a logarithmic conversion circuit while using a circuit constitution similar to a pixel circuit of an image pickup device having only an ordinary linear characteristic. When the photoelectric charge accumulated in a photoelectric conversion element is removed, a charge removing transistor is controlled such that the potential of the channel of the charge removing transistor is set to be higher than the minimum potential of the photoelectric conversion element.

Abstract: In a solid-state image sensing device, a method for driving the solid-state image sensing device, and an image sensing system incorporated with the solid-state image sensing device of the invention, pixel signals having two or more different photoelectric conversion characteristics to be outputted from a pixel section are amplified by using an analog gain with respect to each of the photoelectric conversion characteristics for outputting the amplified pixel signals. This enables to reproduce an image having a wide dynamic range while suppressing lowering of the frame rate.

Abstract: An image capturing apparatus comprises a solid image pickup element having pixels for outputting signals, which are logarithmically varied with respect to an incident light intensity, and a voltage controller. Each of the pixels includes an photoelectric conversion element, and a MOS transistor for logarithmic transformation, in which an output from the photoelectric conversion element is input into a drain. The voltage controller can apply, to a source, a reset voltage for resetting the transistor in such a manner that the photoelectric conversion element is operated in a moving object extraction image pickup mode. Furthermore, the voltage controller applies, to the source, the reset voltage for resetting the transistor to a level selected from a plurality of reset levels for moving object extraction image pickup.

Abstract: Disclosed is a solid-state image sensing device having at least one pixel. The pixel comprises a photoelectric conversion section for outputting an electric signal according to a quantity of incident light, and a sample hold circuit for sampling and holding the electric signal from the photoelectric conversion section and outputting the sampled and held electric signal as an image signal. In this device, a reset voltage for resetting the sample hold circuit obtains at least two different values.

Abstract: There is described an image capturing unit, which make it possible to prevent occurrence of noses, such as lateral stripes, etc., in the captured image, even if a vertical blanking period is introduced. The unit includes: an image sensor provided with pixels aligned in a two-dimensional matrix pattern, a first vertical scanning circuit and a second vertical scanning circuit, to conduct a line progressive scanning; and a control circuit to control a scanning operation of the image sensor. The image sensor is further provided with a dummy pixel area, and the control circuit controls the scanning operation of the image sensor in such a manner that, when any one of the first vertical scanning circuit and the second vertical scanning circuit enters in a vertical blanking period, the concerned one of the first vertical scanning circuit and the second vertical scanning circuit scans the dummy pixel area.

Abstract: A level shifter (181) shifts a signal level of a noise signal produced from a pixel so that the signal level becomes close to a reference level, and then a level shifter (182) complements the noise signal whose level was shifted by the level shifter (181) by a signal level corresponding to the level shifted by the level shifter (181). After that, the differential amplifier (183) performs subtraction operation between the noise signal that has passed the level shifters (181, 182) and the image signal from the pixel, so as to output the image signal without noises.

Abstract: In order to provide a solid state image pickup device in which an offset voltage in an image signal from which a noise signal is removed is made to be low, when an image pickup operation is performed while the MOS transistor T1 is ON, after a signal ?VD with a value Vh is integrated by a capacitor C, the signal ?VD is Vm (Vm<Vh) and a pulse signal ?V is given so that an image signal is output. When dispersion of sensitivity is detected while the MOS transistor T1 is OFF, after the signal ?VD with the value Vh is integrated by the capacitor C, the signal ?VD is V1 (V1<Vm) and the pulse signal ?V is given so that a noise signal is output.

Abstract: An object of the present invention is to provide a solid-state image sensing device configured to change a bias voltage given to the photoelectric converting section at the time of resetting so that an operative condition of the photoelectric converting section after the resetting can be maintained a constant condition regardless of an amount of the incident light. To achieve the object, an MOS transistor T5 is provided. The drain of the MOS transistor T5 is connected with a gate and a drain of an MOS transistor T2 and the source of the MOS transistor T5 configured to be applied a DC voltage VRS. Here, a signal ? V is given, an MOS transistor T4 is turned on, and image data is output. A signal ? RS is given and the MOS transistor T5 is turned on. As a result, a gate voltage Vg of the MOS transistor T2 is maintained as a constant voltage value. Then, a reset operation for pixels is stared.