Abstract: A semiconductor device includes a metal base plate, a case component, and a metal component. The metal component is fixed to the case component. A partial region of the metal component is exposed from the case component. The partial region is bonded to the base plate in a bonding portion. In the bonding portion, a surface of the partial region and a surface of the base plate are in direct contact with each other and integrated.

Abstract: A semiconductor device includes: an insulating resin; a metal pattern provided on the insulating resin; a semiconductor chip jointed to the metal pattern; a case bonded on the insulating resin and surrounding the semiconductor chip; a sealing material sealing the semiconductor chip inside the case; and a cover provided on an upper part of the case and covering the semiconductor chip and the sealing material, wherein a groove having a V-shaped cross-section is provided on the cover.

Abstract: A semiconductor device includes a metal base plate, a case component, and a metal component. The metal component is fixed to the case component. A partial region of the metal component is exposed from the case component. The partial region is bonded to the base plate in a bonding portion. In the bonding portion, a surface of the partial region and a surface of the base plate are in direct contact with each other and integrated.

Abstract: A power semiconductor device including an insulating substrate having a metal layer formed on an upper surface thereof, a semiconductor element and a main electrode bonded to the metal layer, a metal wire connecting the metal layer with the semiconductor element, a metal member bonded to a lower surface side of the insulating substrate, a case member surrounding the insulating substrate and being in contact with a surface of the metal member bonded to the insulating substrate, and a sealing resin which fills a region surrounded by the metal member and the case member and has a resin strength of 0.12 MPa or higher at room temperature, a microcrystallization temperature of ?55° C. or lower, and a needle penetration of 30 to 50 after storage at 175° C. for 1000 hours and seals the insulating substrate, the metal layer, the semiconductor element, the metal wire, and the main electrode.

Abstract: A power semiconductor device including an insulating substrate having a metal layer formed on an upper surface thereof, a semiconductor element and a main electrode bonded to the metal layer, a metal wire connecting the metal layer with the semiconductor element, a metal member bonded to a lower surface side of the insulating substrate, a case member surrounding the insulating substrate and being in contact with a surface of the metal member bonded to the insulating substrate, and a sealing resin which fills a region surrounded by the metal member and the case member and has a resin strength of 0.12 MPa or higher at room temperature, a microcrystallization temperature of ?55° C. or lower, and a needle penetration of 30 to 50 after storage at 175° C. for 1000 hours and seals the insulating substrate, the metal layer, the semiconductor element, the metal wire, and the main electrode.