Abstract: A shared memory device capable of simplifying wiring to a memory, preventing a decline of performance due to an increase of the area and long wiring, and improving extensibility of scalability of the system is provided: wherein the device has a plurality of memory systems each including a memory macro, a processor, and a memory control unit for controlling an access to a memory macro; wherein the memory control unit of each of the memory systems transfers information between the processor and memory macro and transfers information with a memory control unit of a different memory system; the memory macro of each of the memory systems has a memory interface capable of transferring data; and the memory interfaces of the memory macros of different memory systems are mutually connected.

Abstract: A shared memory device capable of simplifying wiring to a memory, preventing a decline of performance due to an increase of the area and long wiring, and improving extensibility of scalability of the system is provided: wherein the device has a plurality of memory systems each including a memory macro, a processor, and a memory control unit for controlling an access to a memory macro; wherein the memory control unit of each of the memory systems transfers information between the processor and memory macro and transfers information with a memory control unit of a different memory system; the memory macro of each of the memory systems has a memory interface capable of transferring data; and the memory interfaces of the memory macros of different memory systems are mutually connected.

Abstract: Disclosed is a read-out circuit for use with semiconductor memory devices such as image memories comprising both a group of randomly accessible memory cells and serial registers that are serially accessed. The read-out circuit contains presetting means for presetting the output side of a column selector of the memory before signal read-out. This prevents the drop in performance margin attributable to boosted parasitic capacity on the column selector output side.

Abstract: A semiconductor memory comprising a memory cell array including a plurality of the memory cells arranged in a matrix, the memory cells being able to be written with and read out data; a reading/writing means for reading and writing data with respect to a selected memory cell; a plurality of auxiliary data storing means arranged in series, a first means among them being connected to the memory cell array and each of the auxiliary data storing means storing a part of the data stored in the memory cell array; a plurality of data output means, each of the data output means being connected to one of the auxiliary data storing means; and a plurality of external data buses, each of the external data buses being connected to one of the data output means; each of the data output means being able to independently output the data stored in a corresponding auxiliary data storing means to a corresponding external data bus.

Abstract: A folded line DRAM having shared sense amplifiers wherein one of two the memory cell arrays is provided with a pair of switches for dividing the bit line pairs into plural bit line pair groups and the second memory cell array is provided with separate switches connected in series the bit line pairs for the purpose of reducing power consumption caused by charging and discharging of the bit lines during accessing.