Abstract: A sealing structure including: a set of base members forming a sealed space; a through-hole which is formed in at least one of the base members, and communicates with the sealed space; and a sealing member that seals the through-hole. An underlying metal film including a bulk-like metal such as gold is provided on a surface of the base member provided with the through-hole. The sealing member seals the through-hole while being bonded to the underlying metal film, and includes: a sealing material which is bonded to the underlying metal film, and includes a compressed product of a metal powder of gold or the like, the metal powder having a purity of 99.9% by mass or more; and a lid-like metal film which is bonded to the sealing material, and includes a bulk-like metal such as gold. Further, the sealing material includes: an outer periphery-side densified region being in contact with an underlying metal film; and a center-side porous region being in contact with the through-hole.

Abstract: A gold powder comprising gold having a purity of 99.9% by mass or more and having an average particle size of 0.01 ?m or more and 1.0 ?m or less, a content of a chloride ion is 100 ppm or less, and a content of a cyanide ion is 10 ppm or more and 1000 ppm or less. A total of the content of a chloride ion and the content of a cyanide ion is preferably 110 ppm or more and 1000 ppm or less. The gold powder has improved adaptability to various processes including bonding or the like with a content of a chloride ion, that is, an impurity, optimized. A gold paste using this gold powder is suitably used in various uses for bonding such as die bonding of a semiconductor chip, sealing a semiconductor package, and forming an electrode/wire.

Abstract: A sealing structure including: a set of base members forming a sealed space; a through-hole which is formed in at least one of the base members, and communicates with the sealed space; and a sealing member that seals the through-hole. An underlying metal film including a bulk-like metal such as gold is provided on a surface of the base member provided with the through-hole. The sealing member seals the through-hole while being bonded to the underlying metal film, and includes: a sealing material which is bonded to the underlying metal film, and includes a compressed product of a metal powder of gold or the like, the metal powder having a purity of 99.9% by mass or more; and a lid-like metal film which is bonded to the sealing material, and includes a bulk-like metal such as gold. Further, the sealing material includes: an outer periphery-side densified region being in contact with an underlying metal film; and a center-side porous region being in contact with the through-hole.

Abstract: A sealing structure with a surface of a base material with a through-hole, an underlying metal film, and a sealing member bonded to the underlying metal film to seal the through-hole. The sealing member includes a compressed product of a metal powder including gold having a purity of 99.9% by mass or more and a lid-like metal film including a bulk-like metal including gold and having a thickness of not less than 0.01 ?m and not more than 5 ?m. The sealing material includes an outer periphery-side densified region in contact with an underlying metal film and a center-side porous region in contact with the through-hole. The shape of pores in the densified region is specified, and the horizontal length (l) of a pore in the radial direction at any cross-section of the densified region and the width (W) of the densified region satisfy the relationship of l?0.1W.

Abstract: A sealing structure with a surface of a base material with a through-hole, an underlying metal film, and a sealing member bonded to the underlying metal film to seal the through-hole. The sealing member includes a compressed product of a metal powder including gold having a purity of 99.9% by mass or more and a lid-like metal film including a bulk-like metal including gold and having a thickness of not less than 0.01 ?m and not more than 5 ?m. The sealing material includes an outer periphery-side densified region in contact with an underlying metal film and a center-side porous region in contact with the through-hole. The shape of pores in the densified region is specified, and the horizontal length (l) of a pore in the radial direction at any cross-section of the densified region and the width (W) of the densified region satisfy the relationship of l?0.1W.

Abstract: A precious metal paste which does not cause contamination of a member, which can be uniformly coated to a member to be bonded, and which is in good condition after bonding is provided. The present invention relates to a precious metal paste for bonding a semiconductor element, of the paste including a precious metal powder and an organic solvent, in which the precious metal powder has a purity of 99.9 mass % or more and an average particle diameter of 0.1 to 0.5 ?m, the organic solvent has a boiling point of 200 to 350° C., and a thixotropy index (TI) value calculated from a measurement value of a viscosity at a shear rate of 4/s with respect to a viscosity at a shear rate of 40/s at 23° C. by means of a rotational viscometer is 6.0 or more.

Abstract: The present invention relates to a package production method includes the step of superposing a pair of substrates on each other, and bonding the substrates to each other to hermetically seal the inside of a sealing region surrounded by a sealing material, which is formed on any of the substrates. The sealing material is formed of a sintered body obtained by sintering a metal powder of at least one selected from gold, silver, palladium and platinum, the metal powder having a purity of 99.9% by weight or more and an average particle size of 0.005 ?m to 1.0 ?m, at least one core material having a width smaller than the width of the sealing material in a cross-sectional shape, and protruding from the periphery is formed on the substrate, and the core material compresses the sealing material to exhibit a sealing effect when the pair of substrates are bonded to each other. Accordingly, a sufficient sealing effect can be exhibited while a pressuring force to the substrate is reduced.

Abstract: A precious metal paste which does not cause contamination of a member, which can be uniformly coated to a member to be bonded, and which is in good condition after bonding is provided. The present invention relates to a precious metal paste for bonding a semiconductor element, of the paste including a precious metal powder and an organic solvent, in which the precious metal powder has a purity of 99.9 mass % or more and an average particle diameter of 0.1 to 0.5 ?m, the organic solvent has a boiling point of 200 to 350° C., and a thixotropy index (TI) value calculated from a measurement value of a viscosity at a shear rate of 4/s with respect to a viscosity at a shear rate of 40/s at 23° C. by means of a rotational viscometer is 6.0 or more.

Abstract: The present invention relates to a package production method includes the step of superposing a pair of substrates on each other, and bonding the substrates to each other to hermetically seal the inside of a sealing region surrounded by a sealing material, which is formed on any of the substrates. The sealing material is formed of a sintered body obtained by sintering a metal powder of at least one selected from gold, silver, palladium and platinum, the metal powder having a purity of 99.9% by weight or more and an average particle size of 0.005 ?m to 1.0 ?m, at least one core material having a width smaller than the width of the sealing material in a cross-sectional shape, and protruding from the periphery is formed on the substrate, and the core material compresses the sealing material to exhibit a sealing effect when the pair of substrates are bonded to each other. Accordingly, a sufficient sealing effect can be exhibited while a pressuring force to the substrate is reduced.

Abstract: The present invention is to provide an hermetic-sealing package member including a substrate and at least one frame-like sealing material for defining a sealing region formed on the substrate, in which the sealing material is formed of a sintered body obtained by sintering at least one metal powder selected from gold, silver, palladium, or platinum having a purity of 99.9 wt % or greater and an average particle size of 0.005 ?m to 1.0 ?m, and with respect to an arbitrary cross-section toward an outside from the sealing region, a length of an upper end of the sealing material is shorter than a length of a lower end. Examples of a cross-sectional shape of the sealing material may include one formed to have a base portion having a certain height and at least one mountain portion protruding from the base portion or one formed to have a mountain portion having substantially a triangular shape in which the length of the lower end of the sealing material is a bottom.

Abstract: A precious metal paste which does not cause contamination of a member, which can be uniformly coated to a member to be bonded, and which is in good condition after bonding is provided. The present invention relates to a precious metal paste for bonding a semiconductor element, of the paste including a precious metal powder and an organic solvent, in which the precious metal powder has a purity of 99.9 mass % or more and an average particle diameter of 0.1 to 0.5 ?m, the organic solvent has a boiling point of 200 to 350° C., and a thixotropy index (TI) value calculated from a measurement value of a viscosity at a shear rate of 4/s with respect to a viscosity at a shear rate of 40/s at 23° C. by means of a rotational viscometer is 6.0 or more.

Abstract: The present invention is to provide an hermetic-sealing package member including a substrate and at least one frame-like sealing material for defining a sealing region formed on the substrate, in which the sealing material is formed of a sintered body obtained by sintering at least one metal powder selected from gold, silver, palladium, or platinum having a purity of 99.9 wt % or greater and an average particle size of 0.005 ?m to 1.0 ?m, and with respect to an arbitrary cross-section toward an outside from the sealing region, a length of an upper end of the sealing material is shorter than a length of a lower end. Examples of a cross-sectional shape of the sealing material may include one formed to have a base portion having a certain height and at least one mountain portion protruding from the base portion or one formed to have a mountain portion having substantially a triangular shape in which the length of the lower end of the sealing material is a bottom.

Abstract: A two-layer structure bump including a first bump layer of a bulk body of a first conductive metal, which is any of gold, copper, and nickel, formed on a substrate and a second bump layer of a sintered body of a powder of a second conductive metal, which is any of gold and silver, formed on the first bump layer. The bulk body composing the first bump layer is formed through any of plating, sputtering, or CVD. The sintered body composing the second bump layer is formed by sintering the powder of the second conductive metal having a purity of not lower than 99.9 wt % and an average particle diameter of 0.005 ?m to 1.0 ?m. The second bump layer has a Young's modulus 0.1 to 0.4 times that of the first bump layer.

Abstract: The present invention provides a conductive paste for die bonding comprising a metal powder and an organic solvent, the metal powder comprising: one or more metal particles selected from a silver powder, a palladium powder, and a copper powder, the metal particles having a purity of 99.9% by mass or higher and an average particle size of 0.01 ?m to 1.0 ?m; and a coating layer made of gold covering at least part of the metal particles. The conductive paste according to the present invention can suppress the occurrence of defects such as voids in a bonded part when a semiconductor element or the like is die-bonded to a substrate.

Abstract: A two-layer structure bump including a first bump layer of a bulk body of a first conductive metal, which is any of gold, copper, and nickel, formed on a substrate and a second bump layer of a sintered body of a powder of a second conductive metal, which is any of gold and silver, formed on the first bump layer. The bulk body composing the first bump layer is formed through any of plating, sputtering, or CVD. The sintered body composing the second bump layer is formed by sintering the powder of the second conductive metal having a purity of not lower than 99.9 wt % and an average particle diameter of 0.005 ?m to 1.0 ?m. The second bump layer has a Young's modulus 0.1 to 0.4 times that of the first bump layer.

Abstract: The present invention is a metal paste for sealing comprising a metal powder and an organic solvent characterized in that the metal powder is one or more kinds of metal powders selected from a gold powder, a silver powder, a platinum powder and a palladium powder which has a purity of 99.9% by weight or more and an average particle size of 0.1 ?m to 1.0 ?m and that the metal powder is contained in a ratio of 85 to 93% by weight and the organic solvent is contained in a ratio of 5 to 15% by weight. As a sealing method using this metal paste, there is a method of applying and drying a metal paste, sintering it at 80 to 300° C. to form a metal powder sintered body and after that pressurizing the base member and the cap member while heating the metal powder sintered body.

Abstract: The present invention is a metal paste for sealing comprising a metal powder and an organic solvent characterized in that the metal powder is one or more kinds of metal powders selected from a gold powder, a silver powder, a platinum powder and a palladium powder which has a purity of 99.9% by weight or more and an average particle size of 0.1 ?m to 1.0 ?m and that the metal powder is contained in a ratio of 85 to 93% by weight and the organic solvent is contained in a ratio of 5 to 15% by weight. This metal paste preferably contains an additive such as a surfactant in accordance with the application method. As a sealing method using this metal paste, there is a method of applying and drying a metal paste, sintering it at 80 to 300° C. to form a metal powder sintered body and after that pressurizing the base member and the cap member while heating the metal powder sintered body.

Abstract: A two-layer structure bump including a first bump layer of a bulk body of a first conductive metal, which is any of gold, copper, and nickel, formed on a substrate and a second bump layer of a sintered body of a powder of a second conductive metal, which is any of gold and silver, formed on the first bump layer. The bulk body composing the first bump layer is formed through any of plating, sputtering, or CVD. The sintered body composing the second bump layer is formed by sintering the powder of the second conductive metal having a purity of not lower than 99.9 wt % and an average particle diameter of 0.005 ?m to 1.0 ?m. The second bump layer has a Young's modulus 0.1 to 0.4 times that of the first bump layer.

Abstract: A precious metal paste which does not cause contamination of a member, which can be uniformly coated to a member to be bonded, and which is in good condition after bonding is provided. The present invention relates to a precious metal paste for bonding a semiconductor element, of the paste including a precious metal powder and an organic solvent, in which the precious metal powder has a purity of 99.9 mass % or more and an average particle diameter of 0.1 to 0.5 ?m, the organic solvent has a boiling point of 200 to 350° C., and a thixotropy index (TI) value calculated from a measurement value of a viscosity at a shear rate of 4/s with respect to a viscosity at a shear rate of 40/s at 23° C. by means of a rotational viscometer is 6.0 or more.

Abstract: The present invention is a metal paste for sealing comprising a metal powder and an organic solvent characterized in that the metal powder is one or more kinds of metal powders selected from a gold powder, a silver powder, a platinum powder and a palladium powder which has a purity of 99.9% by weight or more and an average particle size of 0.1 ?m to 1.0 ?m and that the metal powder is contained in a ratio of 85 to 93% by weight and the organic solvent is contained in a ratio of 5 to 15% by weight. As a sealing method using this metal paste, there is a method of applying and drying a metal paste, sintering it at 80 to 300° C. to form a metal powder sintered body and after that pressurizing the base member and the cap member while heating the metal powder sintered body.