Abstract: A method for producing solder particles, which includes: a preparation step wherein a base material that has a plurality of recesses and solder fine particles are prepared; an accommodation step wherein at least some of the solder fine particles are accommodated in the recesses; and a fusing step wherein the solder fine particles accommodated in the recesses are fused, thereby forming solder particles within the recesses. With respect to this method for producing solder particles, the average particle diameter of the solder particles is from 1 ?m to 30 ?m; and the C.V. value of the solder particles is 20% or less.

Abstract: A method for producing an anisotropic conductive film, which includes: a preparation step wherein a base material that has a plurality of recesses and solder fine particles are prepared; an accommodation step wherein at least some of the solder fine particles are accommodated in the recesses; a fusing step wherein the solder fine particles accommodated in the recesses are fused, thereby forming solder particles within the recesses; a transfer step wherein an insulating resin material is brought into contact with the recess opening side of the base material that includes the solder particles in the recesses, thereby obtaining a first resin layer on which the solder particles have been transferred; and a layering step wherein a second resin layer that is configured from an insulating resin material is formed on the surface of the first resin layer, on which the solder particles have been transferred, thereby obtaining an anisotropic conductive film.

Abstract: An image forming apparatus includes an optical sensor configured to measure reflected light from a test image on the image carrier. The optical sensor includes a printed circuit board, with a light-emitting element provided on a first surface of the printed circuit board, and with the light-emitting element being configured to irradiate the test image on the image carrier with light. The optical sensor also includes a light-receiving element provided on the first surface of the printed circuit board, with the light-receiving element being configured to receive the reflected light from the test image on the image carrier. A connector is provided on a second surface of the printed circuit board opposite to the first surface of the printed circuit board, with a cable for controlling the optical sensor being connected to the connector.

Abstract: The present invention provides a method of fabricating a semiconductor device including forming stop layers (32) that include silicon oxy-nitride films above a semiconductor substrate, forming a cover film (34) between and on the stop layers, in which a top surface of the cover film above a region between the stop layers is higher than top surfaces of the stop layers, and polishing the cover film to the stop layers by using ceria slurry, and also provides a semiconductor device including metal layers (30) provided above a semiconductor substrate, silicon oxy-nitride films (32) provided on the metal layers, and an embedded layer (36) provided between the metal layers to have a top surface substantially coplanar with top surfaces of the silicon oxy-nitride films. According to the present invention, it is possible to provide a semiconductor device having a film of excellent planarization on a surface thereof and fabrication method therefor.

Abstract: The present invention provides a method of fabricating a semiconductor device including forming stop layers (32) that include silicon oxy-nitride films above a semiconductor substrate, forming a cover film (34) between and on the stop layers, in which a top surface of the cover film above a region between the stop layers is higher than top surfaces of the stop layers, and polishing the cover film to the stop layers by using ceria slurry, and also provides a semiconductor device including metal layers (30) provided above a semiconductor substrate, silicon oxy-nitride films (32) provided on the metal layers, and an embedded layer (36) provided between the metal layers to have a top surface substantially coplanar with top surfaces of the silicon oxy-nitride films. According to the present invention, it is possible to provide a semiconductor device having a film of excellent planarization on a surface thereof and fabrication method therefor.

Abstract: The present invention provides a method of fabricating a semiconductor device including forming stop layers (32) that include silicon oxy-nitride films above a semiconductor substrate, forming a cover film (34) between and on the stop layers, in which a top surface of the cover film above a region between the stop layers is higher than top surfaces of the stop layers, and polishing the cover film to the stop layers by using ceria slurry, and also provides a semiconductor device including metal layers (30) provided above a semiconductor substrate, silicon oxy-nitride films (32) provided on the metal layers, and an embedded layer (36) provided between the metal layers to have a top surface substantially coplanar with top surfaces of the silicon oxy-nitride films. According to the present invention, it is possible to provide a semiconductor device having a film of excellent planarization on a surface thereof and fabrication method therefor.

Abstract: The present invention provides a method of fabricating a semiconductor device including forming stop layers (32) that include silicon oxy-nitride films above a semiconductor substrate, forming a cover film (34) between and on the stop layers, in which a top surface of the cover film above a region between the stop layers is higher than top surfaces of the stop layers, and polishing the cover film to the stop layers by using ceria slurry, and also provides a semiconductor device including metal layers (30) provided above a semiconductor substrate, silicon oxy-nitride films (32) provided on the metal layers, and an embedded layer (36) provided between the metal layers to have a top surface substantially coplanar with top surfaces of the silicon oxy-nitride films. According to the present invention, it is possible to provide a semiconductor device having a film of excellent planarization on a surface thereof and fabrication method therefor.