Abstract: A source gas supply method for supplying a source gas to a processing part through a line by a carrier gas is provided. The source gas is generated by vaporizing a film forming source by heating a source container in which the film forming source is stored and a filling gas is filled. The method comprises replacing the filling gas in the source container with a replacement gas that does not deteriorate the source gas, determining whether or not the replacement with the replacement gas has been performed by measuring a pressure in the line using a pressure gauge, and heating the source container and supplying the source gas when it is determined that the replacement with the replacement gas has been performed.

Abstract: A film forming apparatus embeds ruthenium in a substrate having a recess. The film forming apparatus includes: a processing container; a gas supplier configured to supply gas; and a gas exhauster configured to exhaust gas, wherein the gas supplier includes a first supply line configured to supply a ruthenium raw-material gas into the processing container and a second supply line configured to supply a gas containing ozone gas into the processing container, and wherein the gas exhauster includes a first exhaust line including a first exhaust apparatus and configured to exhaust a gas containing a ruthenium raw-material gas from an interior of the processing container by using the first exhaust apparatus, and a second exhaust line including a second exhaust apparatus different from the first exhaust apparatus and configured to exhaust the gas containing ozone gas by using the second exhaust apparatus.

Abstract: In a raw material gas supply apparatus, a remaining amount of the raw material is calculated by subtracting, from an amount of the raw material filled in a new raw material, a cumulative consumption amount including a consumption amount of the raw material calculated based on an actual flow rate of the raw material gas obtained from an offset value, (m3?(m1+m2)), m1, m2 and m3 being respective measurement values of first and second mass controller, and a mass flow meter, obtained by supplying a carrier gas and a dilution gas in a state where the carrier gas flows through a bypass channel, and an actual flow rate measurement value of the raw material obtained by subtracting the offset value from a value of (m3?(m1+m2)) obtained by supplying the carrier gas and dilution gas in a state where the carrier gas flows through the inside of a raw material container.

Abstract: A method includes: transmitting a sublimated raw material together with a carrier gas to a raw material trapping part where the raw material is temporarily trapped; calculating a difference between trapped amounts of the raw material trapped in the raw material trapping part during a predetermined period of time as an increase in trapped amount; obtaining at least one of a period of time required to reach the trapped amount to a target value and a trapping rate of the raw material, based on the increase, a period of trapping time, and a trapped amount measured at the time of completing trapping the raw material; refilling the raw material into the raw material trapping part based on the at least one of the period of refilling time and the trapping rate; and sublimating the raw material and supplying the same together with the carrier gas to a consumption area.

Abstract: A gas supply mechanism of supplying a raw material gas obtained from a raw material of a solid state or a liquid state into a chamber configured to perform a film forming process on a workpiece is disclosed. The gas supply mechanism includes a gas supply controller configured to control a flow rate of a carrier gas by means of a flow rate controller, and to enable the carrier gas to flow while closing a material gas supply/shut-off valve to thereby increase internal pressures of a raw material container and a raw material gas supply pipe to be a high-pressure condition and then control the raw material gas supply/shut-off valve to be opened.

Abstract: A raw material gas supply apparatus is configured to obtain a difference between a set value and a measured value of a vaporized raw material, add the difference as a correction value to the set value of the flow rate of the carrier gas to maintain an amount of the vaporized raw material at the set value, and subtract a difference from a set value of a flow rate of the dilution gas to maintain a total flow rate of the carrier gas and the dilution gas at a constant level. The amount of the vaporized raw material is calculated by subtracting an integration value of a measured value of the flow rate of the inert gas in the supply period of the raw material gas from an integration value of the flow rate of the raw material gas which is measured in the supply period.

Abstract: In a raw material gas supply apparatus, a remaining amount of the raw material is calculated by subtracting, from an amount of the raw material filled in a new raw material, a cumulative consumption amount including a consumption amount of the raw material calculated based on an actual flow rate of the raw material gas obtained from an offset value, (m3?(m1+m2)), m1, m2 and m3 being respective measurement values of first and second mass controller, and a mass flow meter, obtained by supplying a carrier gas and a dilution gas in a state where the carrier gas flows through a bypass channel, and an actual flow rate measurement value of the raw material obtained by subtracting the offset value from a value of (m3?(m1+m2)) obtained by supplying the carrier gas and dilution gas in a state where the carrier gas flows through the inside of a raw material container.

Abstract: A method includes: transmitting a sublimated raw material together with a carrier gas to a raw material trapping part where the raw material is temporarily trapped; calculating a difference between trapped amounts of the raw material trapped in the raw material trapping part during a predetermined period of time as an increase in trapped amount; obtaining at least one of a period of time required to reach the trapped amount to a target value and a trapping rate of the raw material, based on the increase, a period of trapping time, and a trapped amount measured at the time of completing trapping the raw material; refilling the raw material into the raw material trapping part based on the at least one of the period of refilling time and the trapping rate; and sublimating the raw material and supplying the same together with the carrier gas to a consumption area.

Abstract: A source supply apparatus configured to supply a source material sublimated from a solid source material together with a carrier gas to a source consumption zone, includes a source material supplier defining a sealed space and resolidifying and precipitating the source material in a thin film form of, a carrier gas supply passage through which the carrier gas is supplied to the source material supplier, a temperature adjustment part configured to adjust temperature of the source material supplier, a supply passage through which the source material and the carrier gas are supplied from the source material supplier to the source consumption zone, a flow rate measurement part measuring a flow rate of the source material supplied from the source material supplier to the source consumption zone, and a controller configured to control the temperature adjustment part based on a measured flow rate obtained from the flow rate measurement part.

Abstract: A source gas supply apparatus that supplies a carrier gas to a source container through a first supply path and that supplies a source gas to a consuming area of a source through a second supply path is provided. The source gas supply apparatus includes a flow path heater to heat a part between a discharge-side valve nearest to the source container among valves installed in the second supply path and the source container to a temperature equal to or higher than a sublimation temperature of the solid source, a container heater to heat the source container to a temperature equal to or higher than the sublimation temperature of the solid source, and a controller to output a control signal to cool the second supply path and the source container while the source container maintains a lower temperature than a temperature of the second supply path.

Abstract: A raw material gas supply apparatus is configured to obtain a difference between a set value and a measured value of a vaporized raw material, add the difference as a correction value to the set value of the flow rate of the carrier gas to maintain an amount of the vaporized raw material at the set value, and subtract a difference from a set value of a flow rate of the dilution gas to maintain a total flow rate of the carrier gas and the dilution gas at a constant level. The amount of the vaporized raw material is calculated by subtracting an integration value of a measured value of the flow rate of the inert gas in the supply period of the raw material gas from an integration value of the flow rate of the raw material gas which is measured in the supply period.

Abstract: A gas supply mechanism of supplying a raw material gas obtained from a raw material of a solid state or a liquid state into a chamber configured to perform a film forming process on a workpiece is disclosed. The gas supply mechanism includes a gas supply controller configured to control a flow rate of a carrier gas by means of a flow rate controller, and to enable the carrier gas to flow while closing a material gas supply/shut-off valve to thereby increase internal pressures of a raw material container and a raw material gas supply pipe to be a high-pressure condition and then control the raw material gas supply/shut-off valve to be opened.

Abstract: A temperature measurement apparatus for measuring a temperature profile of a substrate mounted on a rotating table, including a radiation temperature measurement unit configured to measure the temperature of plural temperature measurement areas on a surface of the rotating table in a radius direction of the rotating table by scanning the surface of the rotating table in the radius direction; a temperature map generating unit that specifies the address of the temperature measurement area based on the number of the temperature measurement areas measured by the radiation temperature measurement unit for each of the scanning operations in the radius direction of the rotating table, and the rotating speed of the rotating table, and stores the temperature in correspondence with the corresponding address in a storing unit; and a temperature data display processing unit that displays a temperature profile of the rotating table.

Abstract: A temperature measurement apparatus for estimating a temperature profile in a process container, includes a radiation temperature measurement unit configured to measure the temperature of plural temperature measurement areas at a surface of the rotating table in a radius direction of the rotating table by scanning the surface of the rotating table in the radius direction; an operation control unit that controls to start heating of the process container by a heater while keeping the rotating table immobilized, and controls to repeat a scanning operation, in which the radiation temperature measurement unit scans the surface of the rotating table in the radius direction to obtain the temperature of the plural temperature measurement areas while the rotating table is rotated in a circumferential direction of the rotating table, after a predetermined period has passed from starting the heating of the process container.

Abstract: A temperature measurement apparatus for estimating a temperature profile in a process container, includes a radiation temperature measurement unit configured to measure the temperature of plural temperature measurement areas at a surface of the rotating table in a radius direction of the rotating table by scanning the surface of the rotating table in the radius direction; an operation control unit that controls to start heating of the process container by a heater while keeping the rotating table immobilized, and controls to repeat a scanning operation, in which the radiation temperature measurement unit scans the surface of the rotating table in the radius direction to obtain the temperature of the plural temperature measurement areas while the rotating table is rotated in a circumferential direction of the rotating table, after a predetermined period has passed from starting the heating of the process container.

Abstract: A temperature measurement apparatus for measuring a temperature profile of a substrate mounted on a rotating table, including a radiation temperature measurement unit configured to measure the temperature of plural temperature measurement areas on a surface of the rotating table in a radius direction of the rotating table by scanning the surface of the rotating table in the radius direction; a temperature map generating unit that specifies the address of the temperature measurement area based on the number of the temperature measurement areas measured by the radiation temperature measurement unit for each of the scanning operations in the radius direction of the rotating table, and the rotating speed of the rotating table, and stores the temperature in correspondence with the corresponding address in a storing unit; and a temperature data display processing unit that displays a temperature profile of the rotating table.

Abstract: A film deposition device includes a substrate transporting device arranged in a vacuum chamber to include a circulatory transport path in which substrate mounting parts arranged in a row are transported in a circulatory manner, the circulatory transport path including a linear transport path in which the substrate mounting parts are transported linearly. A first reactive gas supplying part is arranged along a transporting direction in which the substrate mounting parts are transported in the linear transport path, to supply a first reactive gas to the substrate mounting parts. A second reactive gas supplying part is arranged alternately with the first reactive gas supplying part along the transporting direction, to supply a second reactive gas to the substrate mounting parts. A separation gas supplying part is arranged to supply a separation gas to a space between the first reactive gas supplying part and the second reactive gas supplying part.

Abstract: A film deposition system which a cycle of alternately supplying a first reactive gas and a second reactive gas and exhausting them is repeated twice or more in a vacuum vessel to cause reaction between the two gases, thereby depositing thin films on substrate surfaces, the film deposition system includes: a plurality of lower members having substrate-placing areas on which substrates will be placed; a plurality of upper members so placed that they face the lower members to form processing spaces together with the substrate-placing areas; a first reactive gas supply unit and a second reactive gas supply unit for supplying a first reactive gas and a second reactive gas, respectively, to the processing spaces; a purge gas supply unit for supplying a purge gas in the period between a first reactive gas supply period and a second reactive gas supply period; exhaust openings, situated along circumferences of the processing spaces, for communicating the inside of the processing spaces with the atmosphere in the vacu

Abstract: A film forming apparatus includes a process chamber 2 configured to accommodate a semiconductor wafer W; a worktable 5 disposed inside the process chamber 2 and configured to place the semiconductor wafer W thereon; a showerhead 40 used as a process gas delivery mechanism disposed to face the worktable 5 and configured to delivery a process gas into the process chamber 2; and an exhaust unit 101 configured to exhaust gas from inside the process chamber 2, wherein the showerhead 40 has a gas passage formed therein for supplying the process gas, and an annular temperature adjusting cell 400 formed therein around the gas passage.

Abstract: In a DRAM array using a capacitor-under-bitline (CUB) layout, the plate layer of the capacitor is significantly reduced in area to reduce misalignments in connections between the bitline and the underlying transistors.