Abstract: A power plant includes a steam generator, a turbine driven by steam generated by the steam generator, a condenser which cools the steam discharged from the turbine to form condensate water by using seawater, a condensate water pipe which supplies the condensate water from the condenser to the steam generator, at least one seawater leak detection device which is included in the condensate water pipe and measures water quality of the condensate water to detect a leak of seawater in the condenser, an attemperator spray which connects to the condensate water pipe to be supplied with the condensate water from a connecting point where the attemperator spray connects to the condensate water pipe, and sprays the condensate water to the steam inside the condenser, and a pipe which diverges from the condensate water pipe and supplies the condensate water to the steam generator, wherein if the seawater leak detection device detects a leak of the seawater in the condenser, the power plant stops pouring the condensate wat

Abstract: The present invention is mainly intended to provide a sealing member which can be easily manufactured and which is capable of sealing with high accuracy and a method of manufacturing the sealing member, wherein the sealing member is a metallic sealing member that is arranged so as to be interposed between a first surface and a second surface which are facing each other. The sealing member is provided with a first protrusion protruded toward the first surface and a pair of second protrusions protruded toward the second surface, wherein the first protrusion is arranged between the paired second protrusions and distal end portions of the first protrusion and second protrusions are mutually parallel flat surfaces.

Abstract: A nuclear power plant and method of operation for augmenting a second reactor thermal power output in a second operation cycle to a level larger than a first reactor thermal power output in the previous operation cycle. The plant is equipped, for example, with a reactor; a steam loop comprising high and low pressure turbines; a condenser for condensing steam discharged therefrom the low pressure turbine; a feedwater heater for heating feedwater supplied from the condenser; and a feedwater loop for leading feedwater discharged from the feedwater heater to the reactor. The operation method includes decreasing a ratio of extraction steam which is led to the feedwater heater from a steam loop in the second operation cycle.

Abstract: Disclosed is a hot-working tool steel having improved toughness and high-temperature strength. Also disclosed is a method for producing the hot-working tool steel. The hot-working tool steel comprises the following components (by mass): C: 0.34-0.40%, Si: 0.3-0.5%, Mn: 0.45-0.75%, Ni: 0-0.5% (exclusive), Cr: 4.9-5.5%, (Mo+1/2W): 2.5-2.9% (provided that Mo and W are contained singly or in combination), and V: 0.5-0.7%, with the remainder being Fe and unavoidable impurities. Preferably, the cross-sectional structure of the hot-working tool steel upon quenching contains a granular structure and an acicular structure, wherein the granular structure (A %) accounts for 45 area % or less, the acicular structure (B %) accounts for 40 area % or less, and the remaining austenite (C %) accounts for 5 to 20 volume %.

Abstract: A nuclear power plant and method of operation for augmenting a second reactor thermal power output in a second operation cycle to a level larger than a first reactor thermal power output in the previous operation cycle. The plant is equipped, for example, with a reactor; a steam loop comprising high and low pressure turbines; a condenser for condensing steam discharged therefrom the low pressure turbine; a feedwater heater for heating feedwater supplied from the condenser; and a feedwater loop for leading feedwater discharged from the feedwater heater to the reactor. The operation method includes decreasing a ratio of extraction steam which is led to the feedwater heater from a steam loop in the second operation cycle.

Abstract: A nuclear power plant and method of operation for augmenting a second reactor thermal power output in a second operation cycle to a level larger than a first reactor thermal power output in the previous operation cycle. The plant is equipped, for example, with a reactor; a steam loop comprising high and low pressure turbines; a condenser for condensing steam discharged therefrom the low pressure turbine; a feedwater heater for heating feedwater supplied from the condenser; and a feedwater loop for leading feedwater discharged from the feedwater heater to the reactor. The operation method includes decreasing a ratio of extraction steam which is led to the feedwater heater from a steam loop in the second operation cycle.

Abstract: In the control of feedwater to the steam generator in a power plant comprising one steam generator and a plurality of turbine plants, the water level in the steam generator and the flow rate balance between the steam flow rate and the feedwater flow rate of each turbine plant will be stabilized. In the power plant comprising one steam generator and a plurality of turbine plants combined, the control in the feedwater controller of the first turbine plant (main turbine plant) is normal control, that is, to control the feedwater control valve through the use of detection signals from the steam generator level detecting unit, the main steam flow detecting unit and the feedwater flow detecting unit of the first turbine plant, and the control in the feedwater controller of the second turbine plant (duplicate turbine plant) is to control the feedwater control valve through the use of a detection signal from the condenser level detecting unit of the first turbine plant.

Abstract: In order to polish an insulating film, a cerium oxide polishing agent (ceria slurry) is used. The ceria slurry is composed of cerium oxide powder containing Na, Ca, Fe, and Cr concentration of which is less than 10 ppm. Fragile inorganic and organic insulating films formed at relatively low temperatures can be polished without degrading the characteristics of the semiconductor element due to Na diffusion.

Abstract: In the control of feedwater to the steam generator in a power plant comprising one steam generator and a plurality of turbine plants, the water level in the steam generator and the flow rate balance between the steam flow rate and the feedwater flow rate of each turbine plant will be stabilized. In the power plant comprising one steam generator and a plurality of turbine plants combined, the control in the feedwater controller of the first turbine plant (main turbine plant) is normal control, that is, to control the feedwater control valve through the use of detection signals from the steam generator level detecting unit, the main steam flow detecting unit and the feedwater flow detecting unit of the first turbine plant, and the control in the feedwater controller of the second turbine plant (duplicate turbine plant) is to control the feedwater control valve through the use of a detection signal from the condenser level detecting unit of the first turbine plant.

Abstract: A nuclear power plant of the invention is equipped, for example, with a reactor; a steam loop comprising high and low pressure turbines; a condenser for condensing steam discharged therefrom the low pressure turbine; a feedwater heater for heating feedwater supplied from the condenser; and a feedwater loop for leading feedwater discharged from the feedwater heater to the reactor, and an operation method thereof is characterized by augmenting a second reactor thermal power output in a second operation cycle of the reactor larger than a first reactor thermal power output in a first operation cycle; and making an increase ratio of extraction steam, which is led to the feedwater heater with being extracted from the steam loop, in the second operation cycle for the first operation cycle smaller than an increase ratio of the second reactor thermal power output for the first reactor thermal power output.

Abstract: In a production process of a semiconductor device, planarizing of a wafer surface pattern can be performed to attain high planarity, good uniformity in the removal amount and improved controllability. This process include a step of planarizing a semiconductor wafer, from which at least two different films have been exposed, by polishing with a grindstone and a dispersant-containing processing liquid.

Abstract: To solve a problem of non-uniform polishing properties of a circumferential surface area of a substrate, so-called edge sagging phenomenon. When a thin film formed on a top surface of the substrate is polished while holding a back surface of the substrate, local stress at a circumferential end of the substrate is reduced by a guide installed so as to surround the substrate. Also, a deformation of the outer circumferential end portion of the substrate is reduced by a recessed groove provided on the guide. Since a thin film formed on the surface can be polished to be flat throughout the surface of the substrate without an occurrence of non-uniform polishing properties of the outer circumferential surface area of the substrate, so-called edge sagging phenomenon, a high-performance semiconductor device can be manufactured at a high yield and low costs.

Abstract: The problem of non-uniform polishing properties of a circumferential surface area of a substrate, so-called edge sagging phenomenon, is solved. When a thin film formed on a top surface of the substrate is polished while holding a back surface of the substrate, local stress at a circumferential end of the substrate is reduced by a guide installed so as to surround the substrate. Also, a deformation of the outer circumferential end portion of the substrate is reduced by a recessed groove provided on the guide. Since a thin film formed on the surface can be polished to be flat throughout the surface of the substrate without an occurrence of non-uniform polishing properties of the outer circumferential surface area of the substrate, so-called edge sagging phenomenon, a high-performance semiconductor device can be manufactured at a high yield and low costs.

Abstract: In order to polish an insulating film, a cerium oxide polishing agent (ceria slurry) is used. The ceria slurry is composed of cerium oxide powder containing Na, Ca, Fe, and Cr concentration of which is less than 10 ppm. Fragile inorganic and organic insulating films formed at relatively low temperatures can be polished without degrading the characteristics of the semiconductor element due to Na diffusion.

Abstract: A processing method capable of presenting the processing condition with a high accuracy to improve the productivity, including a step of applying a first processing to a first substrate and a step of applying a second processing to the first substrate or the second processing to a second substrate and determining a correlation function for each of in-plane positions as the data for the difference in a plurality of processing steps to each of the in-plane positions in view of on the in-plain distribution data to the in-plane position of each of the substrate as a result of the plurality of processings, calculating the in-plain distribution characteristics of the substrate under a desired processing condition in view of the correlation function and processing the substrate based on the in-plain distribution characteristics.

Abstract: The invention provides a process apparatus including a wafer holder, and a process method, in which high planarization performance, scratch free process, narrow edge exclusion and high uniformity can be maintained for more than 10,000 processed wafers. The invention is achieved by providing a unit for keeping a retainer and surface of a polishing wheel non-contact with each other and controlling the gap within a certain range and by setting compression strength of the retainer at more than 3,000 kg/cm2.

Abstract: A processing method capable of presenting the processing condition with a high accuracy to improve the productivity, comprising a step of applying a first processing to a first substrate and a step of applying a second processing to the first substrate or the second processing to a second substrate and determining a correlation function for each of in-plane positions as the data for the difference in a plurality of processing steps to each of the in-plane positions in view of on the in-plain distribution data to the in-plane position of each of the substrate as a result of the plurality of processings, calculating the in-plain distribution characteristics of the substrate under a desired processing condition in view of the correlation function and processing the substrate based on the in-plain distribution characteristics.

Abstract: In order to polish an insulating film, a cerium oxide polishing agent (ceria slurry) is used. The ceria slurry is composed of cerium oxide powder containing Na, Ca, Fe, and Cr concentration of which is less than 10 ppm. Fragile inorganic and organic insulating films formed at relatively low temperatures can be polished without degrading the characteristics of the semiconductor element due to Na diffusion.

Abstract: The invention provides a process apparatus including a wafer holder, and a process method, in which high planarization performance, scratch free process, narrow edge exclusion and high uniformity can be maintained for more than 10,000 processed wafers. The invention is achieved by providing a unit for keeping a retainer and surface of a polishing wheel non-contact with each other and controlling the gap within a certain range and by setting compression strength of the retainer at more than 3,000 kg/cm2.

Abstract: In a production process of a semiconductor device, planarizing of a wafer surface pattern can be performed to attain high planarity, good uniformity in the removal amount and improved controllability. This process include a step of planarizing a semiconductor wafer, from which at least two different films have been exposed, by polishing with a grindstone and a dispersant-containing processing liquid.