Abstract: A coil device includes a core containing a magnetic material and a wire disposed in a coil shape around at least a part of the core. 70% or more of a volume of a middle leg portion of the core is located below a venting surface of a heat-dissipating resin. Between a first base portion of the core and one end of the middle leg portion is an air layer. The air layer is located below the venting surface of the heat-dissipating resin.

Abstract: A coil device includes a core containing a magnetic material and a wire disposed in a coil shape around at least a part of the core. The core includes a middle leg portion and a first base portion. The middle leg portion has a winding portion of the wire disposed therearound. The first base portion is disposed apart by a predetermined distance from one end of the middle leg portion along a winding axis of the winding portion. 70% or more, preferably 80% or more, more preferably 90% or more, or still more preferably 95% or more of a volume of the middle leg portion is located below a venting surface of a heat-dissipating resin.

Abstract: A coil device has a core including a magnetic material and a wire disposed in a coil shape around at least a part of the core. 70% or more of a volume of a middle leg portion of the core is located below an atmosphere open surface of a heat dissipation resin. An outer division gap of the core is provided in a middle or an end portion of the outer leg portion, and a partial adhesive portion in which an adhesive is interposed and an air layer in which an adhesive is not interposed are provided in the outer division gap.

Abstract: A non-transitory computer readable medium stores a program causing a computer to execute: updating predetermined information in accordance with a game status; and setting an upper limit of a parameter of a game medium based on the predetermined information, wherein, on setting the upper limit, when the predetermined information is updated with a preset special condition being not satisfied, the upper limit can be set to a reference value corresponding to the updated predetermined information, when the special condition is satisfied, the upper limit can be set to a value exceeding the reference value corresponding to the predetermined information at that time by a predetermined value, and when the predetermined information is updated with the special condition being satisfied, the upper limit can be set to a value exceeding the reference value corresponding to the updated predetermined information by the predetermined value.

Abstract: A non-transitory computer readable medium stores a program causing a computer to execute: setting an upper limit value for a parameter of a game object in accordance with a specific condition; changing the parameter within the upper limit value serving as a limit; and assigning, upon the satisfaction of a prescribed condition, a privilege with which it is possible to change the parameter of the game object up to a specified value on advantageous terms even in the case where the specified value exceeds the upper limit value.

Abstract: Provided is an antenna apparatus which is capable of improving a gain in a specific direction, reducing an unnecessary gain in an angle range, and reducing its height. A radome 220 is formed such that a central portion positioned above a patch array antenna 130 is formed in different shapes in an outer wall and an inner wall. The central portion of the outer wall of the radome 220 is formed in a flat shape, and thus the height of the radome 120 is reduced. On the other hand, the center portion of the inner wall of the radome 220 is formed such that a radome thickness at a position of the radome 220 in directions in which an angle ? is about ?45° and about +45° when viewed from the center of the patch array antenna 130 changes stepwise.

Abstract: A vehicle operation pedal device including a pedal bracket attached to a vehicle, a pedal arm swingably supported by the pedal bracket about a substantially horizontal support axis, extending downward from the pedal bracket, and having at its lower end a pedal that is operated by being depressed with a foot, and an operation amount sensor disposed on the pedal bracket to detect a pedal arm operation amount, the vehicle operation pedal device having: a cover member including at least a lower wall portion extending from below the operation amount sensor toward a driver's seat and fixedly attached to the pedal bracket; and a reinforcing member made of a metal and fixedly attached to the pedal arm so as to be interposed between the lower wall portion and the operation amount sensor when in an initial state where the pedal arm is not operated by being depressed with the foot.

Abstract: Provided is an antenna apparatus which is capable of improving a gain in a specific direction, reducing an unnecessary gain in an angle range, and reducing its height. A radome 220 is formed such that a central portion positioned above a patch array antenna 130 is formed in different shapes in an outer wall and an inner wall. The central portion of the outer wall of the radome 220 is formed in a flat shape, and thus the height of the radome 120 is reduced. On the other hand, the center portion of the inner wall of the radome 220 is formed such that a radome thickness at a position of the radome 220 in directions in which an angle ? is about ?45° and about +45° when viewed from the center of the patch array antenna 130 changes stepwise.

Abstract: A nitride semiconductor light emitting element 1 includes a second conductivity type nitride semiconductor layer which is formed above a first conductivity type nitride semiconductor layer, a first electrode 17a which is formed on a first region of the second conductivity type nitride semiconductor layer with a first current non-injection layer 13a in between, a first current diffusing layer 14a which is formed between the first current non-injection layer 13a and the first electrode 17a, a second electrode 17b which is formed on a second region of the second conductivity type nitride semiconductor layer with a second current non-injection layer 13b in between, a second current diffusing layer 14b which is formed on the second region and on the second current non-injection layer 13b, and an extending portion 17c which extends from the first electrode 17a and reaches the exposed first conductivity type nitride semiconductor layer.

Abstract: A nitride semiconductor light emitting element 1 includes a second conductivity type nitride semiconductor layer which is formed above thea first conductivity type nitride semiconductor layer, a first electrode 17a which is formed on a first region of the second conductivity type nitride semiconductor layer with a first current non-injection layer 13a in between, a first current diffusing layer 14a which is formed between the first current non-injection layer 13a and the first electrode 17a, a second electrode 17b which is formed on a second region of the second conductivity type nitride semiconductor layer with a second current non-injection layer 13b in between, a second current diffusing layer 14b which is formed on the second region and on the second current non-injection layer 13b, and an extending portion 17c which extends from the first electrode 17a and reaches the exposed first conductivity type nitride semiconductor layer.

Abstract: [Object] To provide an antenna device which has a radiation pattern of wide angle, does not generate nulls in the vicinity of a front of an antenna, and has a high radiation efficiency. [Organization] An array antenna device 1 having a plurality of radiation elements has: a dielectric substrate 2; two or more series array antennas 10, 20 which are formed on the dielectric substrate and to which the plurality of radiation elements 11 to 13, 21 to 23 are connected in series by conductor lines 15, 25; a distributor 30 formed in a layer different from a layer of the dielectric substrate where the series array antennas are formed, the distributor distributing power via capacitive coupling to the two or more series array antennas; and a phase adjuster (conductor lines 34 to 37) adjusting a phase of power distributed by the distributor.

Abstract: A vehicle operation pedal device including a pedal bracket attached to a vehicle, a pedal arm swingably supported by the pedal bracket about a substantially horizontal support axis, extending downward from the pedal bracket, and having at its lower end a pedal that is operated by being depressed with a foot, and an operation amount sensor disposed on the pedal bracket to detect a pedal arm operation amount, the vehicle operation pedal device having: a cover member including at least a lower wall portion extending from below the operation amount sensor toward a driver's seat and fixedly attached to the pedal bracket; and a reinforcing member made of a metal and fixedly attached to the pedal arm so as to be interposed between the lower wall portion and the operation amount sensor when in an initial state where the pedal arm is not operated by being depressed with the foot.

Abstract: [Object] To provide an antenna device which has a radiation pattern of wide angle, does not generate nulls in the vicinity of a front of an antenna, and has a high radiation efficiency. [Organization] An array antenna device 1 having a plurality of radiation elements has: a dielectric substrate 2; two or more series array antennas 10, 20 which are formed on the dielectric substrate and to which the plurality of radiation elements 11 to 13, 21 to 23 are connected in series by conductor lines 15, 25; a distributor 30 formed in a layer different from a layer of the dielectric substrate where the series array antennas are formed, the distributor distributing power via capacitive coupling to the two or more series array antennas; and a phase adjuster (conductor lines 34 to 37) adjusting a phase of power distributed by the distributor.

Abstract: A remote controller 1 is capable of achieving switching operation even when the user presses substantially any place of a switch. A toilet seat open/close switch 12 has a tiltable member 20 which is tiltably supported at its front lower portion to an upper portion of a main body 2, a switch body 30 which is pressed by the tiltable member 20 when the tiltable member 20 tilts, and a cap 40 which is mounted to the upper portion of the main body 2 such that the cap 40 can be freely displaced in the anteroposterior direction and the vertical direction. The tiltable member 20 is disposed in a cavity 41 formed inside the cap 40. As the cap 40 is pressed from front or from above, the tiltable member 20 is pressed by the cap 40 to tilt, whereby the switch body 30 conducts the switching action.

Abstract: A remote controller 1 is capable of achieving switching operation even when the user presses substantially any place of a switch. A toilet seat open/close switch 12 has a tiltable member 20 which is tiltably supported at its front lower portion to an upper portion of a main body 2, a switch body 30 which is pressed by the tiltable member 20 when the tiltable member 20 tilts, and a cap 40 which is mounted to the upper portion of the main body 2 such that the cap 40 can be freely displaced in the anteroposterior direction and the vertical direction. The tiltable member 20 is disposed in a cavity 41 formed inside the cap 40. As the cap 40 is pressed from front or from above, the tiltable member 20 is pressed by the cap 40 to tilt, whereby the switch body 30 conducts the switching action.

Abstract: A process for fabricating a semiconductor device including MOS transistors of low breakdown voltage type and of high breakdown voltage type provided on a semiconductor substrate, the MOS transistor of high breakdown voltage type being operative at a higher voltage than the MOS transistor of low breakdown voltage type and having drift diffusion regions, the process comprises the steps of: forming a LOCOS oxide film on the semiconductor substrate; and performing ion implantation with the use of a single mask having openings respectively defining on the substrate a first region for formation of a first conductivity type MOS transistor of low breakdown voltage type, a second region in which the LOCOS oxide film is formed for isolation of a first conductivity type MOS transistor of high breakdown voltage type, and a third region for formation of a drift diffusion region of a second conductivity type MOS transistor of high breakdown voltage type, so that the first and third regions each have at least two concentrat

Abstract: A process for fabricating a semiconductor device including MOS transistors of low breakdown voltage type and of high breakdown voltage type provided on a semiconductor substrate, the MOS transistor of high breakdown voltage type being operative at a higher voltage than the MOS transistor of low breakdown voltage type and having drift diffusion regions, the process comprises the steps of: forming a LOCOS oxide film on the semiconductor substrate; and performing ion implantation with the use of a single mask having openings respectively defining on the substrate a first region for formation of a first conductivity type MOS transistor of low breakdown voltage type, a second region in which the LOCOS oxide film is formed for isolation of a first conductivity type MOS transistor of high breakdown voltage type, and a third region for formation of a drift diffusion region of a second conductivity type MOS transistor of high breakdown voltage type, so that the first and third regions each have at least two concentrat

Abstract: A method of producing a Bi—Pb—Sr—Ca—Cu oxide superconductor by thermally treating raw material comprises steps of performing first plastic deformation on the raw material, performing first heat treatment on the material being subjected to the first plastic deformation, performing second plastic deformation on the material being subjected to the first heat treatment, and performing second heat treatment on the material being subjected to the second plastic deformation.

Abstract: In a multi-storied frame building, a controlled frame member having means to damp seismic forces of deformation. A first vertical wall column has a top connected to a horizontal wall girder overhanging the wall column. A second wall column is erected in vertical alignment beneath the tip end of the wall girder co-planar with, but spaced from, the first wall column. A seismic response control apparatus connected between the tip end of the wall girder and the top of the second wall column generates damping force when the tip end of the wall girder and the top of the second wall column are displaced relative to each other. Additional girders are arranged on lower stories of the building as required to further strengthen the building against seismic deformation.

Abstract: A method of producing a Bi-Pb-Sr-Ca-Cu oxide superconductor by thermally treating raw material comprises steps of performing first plastic deformation on the raw material, performing first heat treatment on the material being subjected to the first plastic deformation, performing second plastic deformation on the material being subjected to the first heat treatment, and performing second heat treatment on the material being subjected to the second plastic deformation.