Abstract: This invention provides a propulsion unit for a ship with a new structure that is able to propel the ship without using a propeller.

Abstract: The present invention is a method for producing a ceramic porous body with high porosity and continuous macropores, which comprises mixing a ceramic powder with an aqueous solution of a gelable water-soluble polymer to form a slurry, gelling for a while to fix the tissue structure, freezing it to produce ice crystals in the gel tissue and creating structures that become continuous pores, thawing the ice by controlled atmospheric substitution-type drying method with the resulting water being replaced without damaging the gel, and then sintering it to produce a ceramic porous body having various porosities, pore diameters and pore shapes, while conventionally cracks and contraction were likely to occur during drying when the solids concentration of the slurry is less than 20 vol %, with the method of the present invention it is possible to control these problems even at a solids concentration of 10 vol % or less, manufacture and provide a ceramic porous body with a porosity of 72% to 99% and a compression stren

Abstract: The present invention is a method for producing a ceramic porous body with high porosity and continuous macropores, which comprises mixing a ceramic powder with an aqueous solution of a gelable water-soluble polymer to form a slurry, gelling for a while to fix the tissue structure, freezing it to produce ice crystals in the gel tissue and creating structures that become continuous pores, thawing the ice by controlled atmospheric substitution-type drying method with the resulting water being replaced without damaging the gel, and then sintering it to produce a ceramic porous body having various porosities, pore diameters and pore shapes, while conventionally cracks and contraction were likely to occur during drying when the solids concentration of the slurry is less than 20 vol %, with the method of the present invention it is possible to control these problems even at a solids concentration of 10 vol % or less, manufacture and provide a ceramic porous body with a porosity of 72% to 99% and a compression stren

Abstract: A dynamic random access memory or the like, in which in order to prevent the breakdown voltage deterioration of a capacitive element when a TiN film of an electrode material is deposited by the CVD method over a tantalum film constituting the capacitor insulating film of the capacitive element, a passivation film is formed in advance over the surface of the tantalum oxide film to prevent the tantalum oxide film from contacting a nitrogen-containing reducing gas, when the TiN film is deposited over the tantalum oxide film by the CVD method using a titanium-containing source gas and the nitrogen-containing reducing gas.

Abstract: When positioning a sample, a sample position adjusting light source section with a long coherence length is inserted into an optical system, and the sample position is adjusted such that the interference fringe pattern observed becomes a predetermined pattern, whereby the position of a surface to be inspected can be easily set within a coherence range in a simple configuration in a light wave interference apparatus using light with a short coherence length. When a sample position adjusting light source section (31) is inserted into the optical system, a light beam with a long coherence length, which has been turned into divergent light, is irradiated on each of a reference surface (4a) and a surface to be inspected (5a), whereby spherical waves reach these two surfaces (4a, 5a).

Abstract: Herein disclosed is a process for manufacturing a semiconductor device, which comprises: a step of forming a first electrode composed of tantalum and tungsten over a semiconductor substrate; a step of depositing a dielectric film of tantalum oxide on the first electrode; a step of oxidizing the first electrode and the dielectric film of tantalum oxide; and a step of forming a second electrode over the dielectric film.

Abstract: When a MOSFET containing a tantalum pentoxide film as a gate insulating film is formed, ion implantation is applied such that the end of an insulating film containing a tantalum pentoxide film situates to the outside of a gate electrode to thereby form source and drain regions. This can effectively prevent troubles such as short-circuitting due to tantalum pentoxide film and a highly reliable MOSFET can be obtained without applying light oxidation.