Abstract: A method for producing a gasoline alternative by mixing FT light naphtha obtained through Fischer-Tropsch synthesis using renewable power with bioalcohol obtained from biomass, includes: determining a mixing ratio of the bioalcohol to the FT light naphtha based on an octane value of the FT light naphtha, a blending octane value of the bioalcohol, and a predetermined target octane value; determining a hydrogenation ratio for hydrogenation of olefin contained in the FT light naphtha to paraffin such that the gasoline alternative has an olefin content ratio of 10 vol % or less based on the determined mixing ratio of the bioalcohol and an olefin content ratio of the FT light naphtha; hydrogenating the FT light naphtha according to the determined hydrogenation ratio; and mixing the bioalcohol with the hydrogenated FT light naphtha according to the determined mixing ratio of the bioalcohol.

Abstract: A multi-orientation cryostat 5 for a superconducting magnet 4 for use in a plurality of orientations. The cryostat 5 comprises a vessel 6 for holding cryogenic liquid and, leading away from the vessel, a quench duct 7 for allowing escape from the vessel of gas generated by boiling of the cryogenic liquid due to quenching of the magnet. The quench duct 7 is sinuous so as to provide at least to differently orientated anti-convection portions 71, each portion for functioning as an anti-convection portion with the cryostat in a respective corresponding orientation.

Abstract: A multi-orientation cryostat 5 for a superconducting magnet 4 for use in a plurality of orientations. The cryostat 5 comprises a vessel 6 for holding cryogenic liquid and, leading away from the vessel, a quench duct 7 for allowing escape from the vessel of gas generated by boiling of the cryogenic liquid due to quenching of the magnet. The quench duct 7 is sinuous so as to provide at least to differently orientated anti-convection portions 71, each portion for functioning as an anti-convection portion with the cryostat in a respective corresponding orientation.

Abstract: A multi-orientation cryostat 5 for a superconducting magnet 4 for use in a plurality of orientations. The cryostat 5 comprises a vessel 6 for holding cryogenic liquid and, leading away from the vessel, a quench duct 7 for allowing escape from the vessel of gas generated by boiling of the cryogenic liquid due to quenching of the magnet. The quench duct 7 is sinuous so as to provide at least to differently orientated anti-convection portions 71, each portion for functioning as an anti-convection portion with the cryostat in a respective corresponding orientation.

Abstract: In a quadrangular photomask blank substrate with a length on each side of at least 6 inches, which has a pair of strip-like regions that extend from 2 to 10 mm inside each of a pair of opposing sides along an outer periphery of a substrate top surface, with a 2 mm edge portion excluded at each end, each strip-like region is inclined downward toward the outer periphery of the substrate, and a difference between maximum and minimum values for height from a least squares plane for the strip-like region to the strip-like region is at most 0.5 ?m. The substrate exhibits a good surface flatness at the time of wafer exposure.

Abstract: A photomask blank substrate is made by polishing a starting substrate to a specific flatness in a principal surface region on a top surface of the substrate so as to form a polished intermediate product, then additionally polishing the intermediate product. Substrates made in this way exhibit a good surface flatness at the time of wafer exposure. When a photomask fabricated from a blank obtained from such a substrate is held on the mask stage of a wafer exposure system with a vacuum chuck, the substrate surface undergoes minimal warping, enabling exposure patterns of small geometry to be written onto wafers to good position and linewidth accuracies.

Abstract: Provided that a pair of strip-like regions extend from 2 mm to 10 mm inside each of a pair of opposing sides along an outer periphery of a top surface of a substrate on which a mask pattern is to be formed, with a 2 mm edge portion excluded at each end in a lengthwise direction thereof, the height from a least squares plane for the strip-like regions on the substrate top surface to the strip-like regions is measured at intervals of 0.05-0.35 mm in horizontal and vertical directions, and a substrate in which the difference between the maximum and minimum values for the height among all the measurement points is ?o? ?o?? ???? 0.5 ?m is selected.

Abstract: In a phase shift mask blank comprising a transparent substrate and a phase shift film thereon, after the phase shift film is formed on the substrate, it is surface treated with ozone water having an ozone concentration of at least 1 ppm. The resulting phase shift film is of quality in that it experiences minimized changes of phase difference and transmittance upon immersion in chemical liquid during subsequent mask cleaning step or the like.

Abstract: A photomask blank substrate is selected for use in a process where at least a masking film or a phase shift film is deposited on a top surface of a photomask blank substrate to form a photomask blank, the deposited film is patterned to form a photomask, and the photomask is mounted in an exposure tool. The substrate is selected by simulating a change in shape in the top surface of the substrate, from prior to film deposition thereon to when the photomask is mounted in the exposure tool; determining the shape of the substrate top surface prior to the change that will impart to the top surface a flat shape when the photomask is mounted in the exposure tool; and selecting, as an acceptable substrate, a substrate having this top surface shape. The selected substrate has an optimized top surface shape that improves productivity in photomask fabrication.

Abstract: Provided that a pair of strip-like regions extend from 2 mm to 10 mm inside each of a pair of opposing sides along an outer periphery of a top surface of a substrate on which a mask pattern is to be formed, with a 2 mm edge portion excluded at each end in a lengthwise direction thereof, the height from a least squares plane for the strip-like regions on the substrate top surface to the strip-like regions is measured at intervals of 0.05-0.35 mm in horizontal and vertical directions, and a substrate in which the difference between the maximum and minimum values for the height among all the measurement points is ?o? ?o?? ???? 0.5 ?m is selected.

Abstract: A photomask blank substrate is selected for use in a process where at least a masking film or a phase shift film is deposited on a top surface of a photomask blank substrate to form a photomask blank, the deposited film is patterned to form a photomask, and the photomask is mounted in an exposure tool. The substrate is selected by simulating a change in shape in the top surface of the substrate, from prior to film deposition thereon to when the photomask is mounted in the exposure tool; determining the shape of the substrate top surface prior to the change that will impart to the top surface a flat shape when the photomask is mounted in the exposure tool; and selecting, as an acceptable substrate, a substrate having this top surface shape. The selected substrate has an optimized top surface shape that improves productivity in photomask fabrication.

Abstract: A photomask blank substrate is made by polishing a starting substrate to a specific flatness in a principal surface region on a top surface of the substrate so as to form a polished intermediate product, then additionally polishing the intermediate product. Substrates made in this way exhibit a good surface flatness at the time of wafer exposure. When a photomask fabricated from a blank obtained from such a substrate is held on the mask stage of a wafer exposure system with a vacuum chuck, the substrate surface undergoes minimal warping, enabling exposure patterns of small geometry to be written onto wafers to good position and linewidth accuracies.

Abstract: In a quadrangular photomask blank substrate with a length on each side of at least 6 inches, which has a pair of strip-like regions that extend from 2 to 10 mm inside each of a pair of opposing sides along an outer periphery of a substrate top surface, with a 2 mm edge portion excluded at each end, each strip-like region is inclined downward toward the outer periphery of the substrate, and a difference between maximum and minimum values for height from a least squares plane for the strip-like region to the strip-like region is at most 0.5 ?m. The substrate exhibits a good surface flatness at the time of wafer exposure.

Abstract: In a phase shift mask blank comprising a transparent substrate and a phase shift film thereon, after the phase shift film is formed on the substrate, it is surface treated with ozone water having an ozone concentration of at least 1 ppm. The resulting phase shift film is of quality in that it experiences minimized changes of phase difference and transmittance upon immersion in chemical liquid during subsequent mask cleaning step or the like.

Abstract: In a phase shift mask blank comprising a transparent substrate and a phase shift film thereon, after the phase shift film is formed on the substrate, it is surface treated with ozone water having an ozone concentration of at least 1 ppm. The resulting phase shift film is of quality in that it experiences minimized changes of phase difference and transmittance upon immersion in chemical liquid during subsequent mask cleaning step or the like.