Abstract: An object is to provide a display device with excellent display characteristics, where a pixel circuit and a driver circuit provided over one substrate are formed using transistors which have different structures corresponding to characteristics of the respective circuits. The driver circuit portion includes a driver circuit transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using a metal film, and a channel layer is formed using an oxide semiconductor. The pixel portion includes a pixel transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using an oxide conductor, and a semiconductor layer is formed using an oxide semiconductor. The pixel transistor is formed using a light-transmitting material, and thus, a display device with higher aperture ratio can be manufactured.

Abstract: An examination assistant device (3) is used for examination in which a process solution containing an etching solution is held in contact with an examination objective portion of a quartz pole member (21) of a semiconductor processing apparatus, and then the process solution is analyzed to identify a metal impurity contained in the examination objective portion. The pole member (21) includes a pair of concave portions (22) disposed one on either side of the examination objective portion. The examination assistant device (3) includes a pair of end plates (32) configured to engage with the pair of concave portions, a frame (30) connecting the pair of end plates, and a solution receiver (31) disposed between the pair of end plates. The solution receiver (31) has dimensions to store the process solution and hold the process solution in contact with the examination objective portion.

Abstract: The present invention relates to control of copper contamination to semiconductor substrates upon operation of a heat treatment apparatus which is a semiconductor manufacturing apparatus and which is constructed with quartz products having been contaminated with copper when machined. The quartz product is placed in a heating atmosphere on the stage where it is not still used for a heat treatment for semiconductor substrates. Baking gases including a hydrogen chloride gas and a gas for enhancing activity of the hydrogen chloride gas, for example, an oxygen gas, are then supplied to the quartz product. Consequently, the copper concentration in the region from the surface to the 30 ?m depth of the quartz product can be controlled below 20 ppb, preferably below 3 ppb. The baking process may be carried out before or after assembling the quartz product into the heat treatment apparatus.

Abstract: The present invention is a quartz-product baking method for baking a first quartz product and a second quartz product to remove a metal contained therein, the first and second quartz products being to be loaded into a heat-processing apparatus for heat-processing a semiconductor substrate so that at least a part of each quartz product is brought into contact with a heat-processing atmosphere of the heat-processing apparatus, the quartz-product baking method comprising the steps of: with the use of a jig including a first jig element and a second jig element that are disengageably stacked in a tier-like manner, placing the first quartz product on the first jig element, stacking the second jig element on the first jig element, and placing the second quartz product on the second jig member; placing on a lid member the jig in which the quartz products are placed in a tier-like manner, elevating the lid member to load the jig into a baking vertical vessel through a lower opening thereof, and hermetically sealing t

Abstract: The present invention is a quartz-product baking method for baking a first quartz product and a second quartz product to remove a metal contained therein, the first and second quartz products being to be loaded into a heat-processing apparatus for heat-processing a semiconductor substrate so that at least a part of each quartz product is brought into contact with a heat-processing atmosphere of the heat-processing apparatus, the quartz-product baking method comprising the steps of: with the use of a jig including a first jig element and a second jig element that are disengageably stacked in a tier-like manner, placing the first quartz product on the first jig element, stacking the second jig element on the first jig element, and placing the second quartz product on the second jig member; placing on a lid member the jig in which the quartz products are placed in a tier-like manner, elevating the lid member to load the jig into a baking vertical vessel through a lower opening thereof, and hermetically sealing t

Abstract: The present invention relates to control of copper contamination to semiconductor substrates upon operation of a heat treatment apparatus which is a semiconductor manufacturing apparatus and which is constructed with quartz products having been contaminated with copper when machined. The quartz product is placed in a heating atmosphere on the stage where it is not still used for a heat treatment for semiconductor substrates. Baking gases including a hydrogen chloride gas and a gas for enhancing activity of the hydrogen chloride gas, for example, an oxygen gas, are then supplied to the quartz product. Consequently, the copper concentration in the region from the surface to the 30 ?m depth of the quartz product can be controlled below 20 ppb, preferably below 3 ppb. The baking process may be carried out before or after assembling the quartz product into the heat treatment apparatus.

Abstract: The present invention relates to control of copper contamination to semiconductor substrates upon operation of a heat treatment apparatus which is a semiconductor manufacturing apparatus and which is constructed with quartz products having been contaminated with copper when machined. The quartz product is placed in a heating atmosphere on the stage where it is not still used for a heat treatment for semiconductor substrates. Baking gases including a hydrogen chloride gas and a gas for enhancing activity of the hydrogen chloride gas, for example, an oxygen gas, are then supplied to the quartz product. Consequently, the copper concentration in the region from the surface to the 30 ?m depth of the quartz product can be controlled below 20 ppb, preferably below 3 ppb. The baking process may be carried out before or after assembling the quartz product into the heat treatment apparatus.

Abstract: An examination assistant device (3) is used for examination in which a process solution containing an etching solution is held in contact with an examination objective portion of a quartz pole member (21) of a semiconductor processing apparatus, and then the process solution is analyzed to identify a metal impurity contained in the examination objective portion. The pole member (21) includes a pair of concave portions (22) disposed one on either side of the examination objective portion. The examination assistant device (3) includes a pair of end plates (32) configured to engage with the pair of concave portions, a frame (30) connecting the pair of end plates, and a solution receiver (31) disposed between the pair of end plates. The solution receiver (31) has dimensions to store the process solution and hold the process solution in contact with the examination objective portion.

Abstract: An overlock sewing machine having a dial and a conversion means for converting the rotary motion of the dial into a linear motion which are associated with a cutter blade holder such that the adjustment of the distance between a stationary claw and a movable claw adjusts the looping width in correspondence with the linear movement of the cutter blade holder perpendicular to the direction of feed of the cloth caused by rotation of the dial. The movable claw, carried by a movable member, can move between an operative position in which the movable claw is positioned next to the side of the stationary claw and an inoperative position spaced away from the side of the stationary claw. The position at which the cutter blade holder is supported on the machine body is offset from the position at which the upper and lower cutting blades make contact.